component

K3056-VB

Public Made by Adom

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VBsemi Elec MOSFETs, TO-220AB. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

componenttriode-mos tube-transistork3056-vbfactory-2.0.0extractor-text

Verified K3056-VB

by Ray · last 2 Nov 2026 · 1 record · files match
SymbolFootprint3D modelPins

Verification log 1 record

2 Nov 2026RayPublished by the parts factory: tier lcsc, 3 pinsfiles match
SymbolFootprint3D modelPinsfor all variants
  • ✓component-page-verify: PASS
  • ✓cad_props: Datasheet, MPN and distributor properties match page.json
  • ✓component: K3056-VB · TO-220AB · 3 pins
  • ✓copper: 3 copper pads, none touching another net
  • ✓datasheet: all 3 pin names found in the 9-page datasheet
  • •distributor (warn): no ['digikey', 'mouser'] number
  • ✓family: TO-220-3_Vertical
  • ✓files: 7 declared files present
  • ✓hero: docs/hero.png 4000x2500
  • ✓lbr: OK: /tmp/cpv-1lfy0j3w/x.lbr is a valid EAGLE .lbr with complete deviceset
  • ✓license: CC-BY-SA-4.0
  • ✓models_3d: 2 records
  • •package_fit (skip): no component.package_dims on the page: the model is unchecked against the datasheet drawing
  • ✓pads: 3 pins = 3 pads
  • ✓pose: 2 STEP(s) Z-up, seated, centred
  • ✓symbol: 3 pins agree
  • ✓visibility: public, source open
Evidencedatasheet
Verified files✓ k3056-vb.kicad_sym✓ k3056-vb.kicad_mod✓ k3056-vb.step
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Ray Publish 0.1.0 e3f842b 4d ago

K3056-VB

VBsemi Elec · MOSFETs · TO-220AB

K3056-VB from VBsemi Elec, in a TO-220AB. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate of the N-channel MOSFET, with a gate-source voltage limit of ±20 V and logic-level gate drive (VGS = 5 V for logic-level devices).
2 D passive Drain of the N-channel MOSFET, rated for a drain-source voltage of 60 V, and the drain is also the case/tab with the thermal path given as junction-to-case (drain).
3 S passive Source of the N-channel MOSFET, which forms the reference for the gate-source voltage and the body diode.

Key specifications

Parameter Value
Manufacturer VBsemi Elec
Package TO-220AB
Category Triode/MOS Tube/Transistor
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage VDS 60 V 1
Gate-Source Voltage VGS -20 20 V 1
Continuous Drain Current ID 50 A TC = 25 °C, VGS at 10 V 1
Continuous Drain Current ID 36 A TC = 100 °C 1
Pulsed Drain Current IDM 200 A 1
Single Pulse Avalanche Energy EAS 400 mJ 1
Maximum Power Dissipation PD 150 W TC = 25 °C 1
Maximum Power Dissipation (PCB Mount) PD 3.7 W TA = 25 °C 1
Peak Diode Recovery dV/dt dV/dt 4.5 V/ns 1
Operating Junction and Storage Temperature Range TJ, Tstg -55 175 °C 1
Soldering Recommendations (Peak Temperature) 300 °C for 10 s 1
Linear Derating Factor 1 W/°C 1
Linear Derating Factor (PCB Mount) 0.025 W/°C 1
Maximum Junction-to-Ambient RthJA 62 °C/W 2
Maximum Junction-to-Ambient (PCB Mount) RthJA 40 °C/W PCB mount 2
Drain-Source Breakdown Voltage V(BR)DSS 60 V VGS = 0, ID = 250 μA 2
Gate-Source Threshold Voltage VGS(th) 1 2.5 V VDS = VGS, ID = 250 μA 2
Gate-Source Leakage IGSS -100 100 nA VGS = ± 10 V 2
Zero Gate Voltage Drain Current IDSS 25 μA VDS = 60 V, VGS = 0 V 2
Zero Gate Voltage Drain Current IDSS 250 μA VDS = 48 V, VGS = 0 V, TJ = 150 °C 2
Forward Transconductance gfs 23 S VDS = 25 V, ID = 21 A 2
Total Gate Charge Qg 66 nC ID = 51 A, VDS = 48 V, see fig. 6 and 13 VGS = 5.0 V 2
Gate-Source Charge Qgs 12 nC 2
Gate-Drain Charge Qgd 43 nC 2
Continuous Source-Drain Diode Current IS 50 A 2
Pulsed Diode Forward Current ISM 200 A 2
Body Diode Voltage VSD 2.5 V TJ = 25 °C, IS = 51 A, VGS = 0 V 2
Body Diode Reverse Recovery Time trr 130 180 ns TJ = 25 °C, IF = 51 A, dI/dt = 100 A/μs 2
Body Diode Reverse Recovery Charge Qrr 0.84 1.3 μC 2
VDS Temperature Coefficient VDS/TJ 0.07 V/°C Reference to 25 °C, ID = 1 mA 2
Drain-Source On-State Resistance RDS(on) 0.024 Ω VGS = 10 V, ID = 21 A 2
Drain-Source On-State Resistance RDS(on) 0.028 Ω VGS = 4.5 V, ID = 15 A 2
Input Capacitance Ciss 190 pF VGS = 0 V, VDS = 25 V, f = 1.0 MHz 2
Turn-On Delay Time td(on) 17 ns VDD = 30 V, ID = 51 A, Rg = 4.6 Ω, RD = 0.56 Ω 2
Rise Time tr 230 ns VDD = 30 V, ID = 51 A, Rg = 4.6 Ω, RD = 0.56 Ω 2
Fall Time tf 110 ns VDD = 30 V, ID = 51 A, Rg = 4.6 Ω, RD = 0.56 Ω 2
Internal Drain Inductance LD 4.5 nH Between lead, 6 mm (0.25") from package and center of die contact 2
Internal Source Inductance LS 7.5 nH 2

CAD (KiCad official)

  • Symbol: K3056-VB
  • Footprint: Package_TO_SOT_THT:TO-220-3_Vertical
  • 3D model: TO-220AB (KiCad packages3D, STEP)
  • 3D model files: k3056-vb-etched.step / k3056-vb-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); k3056-vb.step / k3056-vb.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: VBsemi Elec datasheet (9 pp, sha256 3bf379fa5d3e8919, retrieved 2026-11-02, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF