component
K2543-VB
Public Made by Adomby adom
VBsemi Elec MOSFETs, TO-220F. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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K2543-VB
VBsemi Elec · MOSFETs · TO-220F
K2543-VB from VBsemi Elec, in a TO-220F. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate of the N-channel MOSFET, with gate-source voltage rated ±30 V (VGS). |
| 2 | D | passive | Drain of the N-channel MOSFET, rated 650 V drain-source voltage and 12 A continuous drain current at TC = 25 °C. |
| 3 | S | passive | Source of the N-channel MOSFET, the reference terminal for VGS, with continuous source-drain diode current IS of 15 A. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | VBsemi Elec |
| Package | TO-220F |
| Category | Transistors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS | 650 | V | 1 | |||
| Gate-Source Voltage | VGS | -30 | 30 | V | 1 | ||
| Continuous Drain Current | ID | 12 | A | TJ = 150 °C, VGS at 10 V, TC = 25 °C | 1 | ||
| Continuous Drain Current | ID | 9.4 | A | TJ = 150 °C, VGS at 10 V, TC = 100 °C | 1 | ||
| Pulsed Drain Current | IDM | 45 | A | 1 | |||
| Linear Derating Factor | 3.6 | W/°C | 1 | ||||
| Operating Junction and Storage Temperature Range | TJ, Tstg | -55 | 150 | °C | 1 | ||
| Drain-Source Voltage Slope | dV/dt | 15 | V/ns | TJ = 125 °C | 1 | ||
| Soldering Recommendations (Peak Temperature) | 300 | °C | for 10 s, 1.6 mm from case | 1 | |||
| Maximum Junction-to-Ambient | RthJA | 60 | °C/W | 2 | |||
| Maximum Junction-to-Case (Drain) | RthJC | 0.8 | °C/W | 2 | |||
| Drain-Source Breakdown Voltage | VDS | 650 | V | VGS = 0 V, ID = 250 μA | 2 | ||
| Gate-Source Threshold Voltage (N) | VGS(th) | 3 | 5 | V | VDS = VGS, ID = 250 μA | 2 | |
| Gate-Source Leakage | IGSS | -100 | 100 | nA | VGS = ±20 V | 2 | |
| Gate-Source Leakage | IGSS | -1 | 1 | μA | VGS = ±30 V | 2 | |
| Zero Gate Voltage Drain Current | IDSS | 1 | μA | VDS = 650 V, VGS = 0 V | 2 | ||
| Zero Gate Voltage Drain Current | IDSS | 10 | μA | VDS = 520 V, VGS = 0 V, TJ = 125 °C | 2 | ||
| Turn-On Delay Time | td(on) | 13 | 25 | ns | VDD = 520 V, ID = 8 A, VGS = 10 V, Rg = 9.1 Ω | 2 | |
| Rise Time | tr | 11 | 35 | ns | VDD = 520 V, ID = 8 A, VGS = 10 V, Rg = 9.1 Ω | 2 | |
| Turn-Off Delay Time | td(off) | 81 | 90 | ns | VDD = 520 V, ID = 8 A, VGS = 10 V, Rg = 9.1 Ω | 2 | |
| Fall Time | tf | 25 | 40 | ns | VDD = 520 V, ID = 8 A, VGS = 10 V, Rg = 9.1 Ω | 2 | |
| Continuous Source-Drain Diode Current | IS | 15 | A | 2 | |||
| Pulsed Diode Forward Current | ISM | 40 | A | 2 | |||
| Diode Forward Voltage | VSD | 1.5 | V | TJ = 25 °C, IS = 8 A, VGS = 0 V | 2 |
CAD (KiCad official)
- Symbol:
K2543-VB - Footprint:
Package_TO_SOT_THT:TO-220F-3_Vertical - 3D model: TO-220F (KiCad packages3D, STEP)
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: VBsemi Elec datasheet (8 pp, sha256
25222eb8197a2128, retrieved 2026-10-27, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).
# K2543-VB
**VBsemi Elec** · MOSFETs · TO-220F
K2543-VB from VBsemi Elec, in a TO-220F. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
## Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate of the N-channel MOSFET, with gate-source voltage rated ±30 V (VGS). |
| 2 | D | passive | Drain of the N-channel MOSFET, rated 650 V drain-source voltage and 12 A continuous drain current at TC = 25 °C. |
| 3 | S | passive | Source of the N-channel MOSFET, the reference terminal for VGS, with continuous source-drain diode current IS of 15 A. |
## Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | VBsemi Elec |
| Package | TO-220F |
| Category | Transistors |
| Pins | 3 |
## Electrical characteristics
Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS | | | 650 | V | | 1 |
| Gate-Source Voltage | VGS | -30 | | 30 | V | | 1 |
| Continuous Drain Current | ID | | | 12 | A | TJ = 150 °C, VGS at 10 V, TC = 25 °C | 1 |
| Continuous Drain Current | ID | | | 9.4 | A | TJ = 150 °C, VGS at 10 V, TC = 100 °C | 1 |
| Pulsed Drain Current | IDM | | | 45 | A | | 1 |
| Linear Derating Factor | | | | 3.6 | W/°C | | 1 |
| Operating Junction and Storage Temperature Range | TJ, Tstg | -55 | | 150 | °C | | 1 |
| Drain-Source Voltage Slope | dV/dt | | | 15 | V/ns | TJ = 125 °C | 1 |
| Soldering Recommendations (Peak Temperature) | | | | 300 | °C | for 10 s, 1.6 mm from case | 1 |
| Maximum Junction-to-Ambient | RthJA | | | 60 | °C/W | | 2 |
| Maximum Junction-to-Case (Drain) | RthJC | | | 0.8 | °C/W | | 2 |
| Drain-Source Breakdown Voltage | VDS | 650 | | | V | VGS = 0 V, ID = 250 μA | 2 |
| Gate-Source Threshold Voltage (N) | VGS(th) | 3 | | 5 | V | VDS = VGS, ID = 250 μA | 2 |
| Gate-Source Leakage | IGSS | -100 | | 100 | nA | VGS = ±20 V | 2 |
| Gate-Source Leakage | IGSS | -1 | | 1 | μA | VGS = ±30 V | 2 |
| Zero Gate Voltage Drain Current | IDSS | | | 1 | μA | VDS = 650 V, VGS = 0 V | 2 |
| Zero Gate Voltage Drain Current | IDSS | | | 10 | μA | VDS = 520 V, VGS = 0 V, TJ = 125 °C | 2 |
| Turn-On Delay Time | td(on) | | 13 | 25 | ns | VDD = 520 V, ID = 8 A, VGS = 10 V, Rg = 9.1 Ω | 2 |
| Rise Time | tr | | 11 | 35 | ns | VDD = 520 V, ID = 8 A, VGS = 10 V, Rg = 9.1 Ω | 2 |
| Turn-Off Delay Time | td(off) | | 81 | 90 | ns | VDD = 520 V, ID = 8 A, VGS = 10 V, Rg = 9.1 Ω | 2 |
| Fall Time | tf | | 25 | 40 | ns | VDD = 520 V, ID = 8 A, VGS = 10 V, Rg = 9.1 Ω | 2 |
| Continuous Source-Drain Diode Current | IS | | | 15 | A | | 2 |
| Pulsed Diode Forward Current | ISM | | | 40 | A | | 2 |
| Diode Forward Voltage | VSD | | | 1.5 | V | TJ = 25 °C, IS = 8 A, VGS = 0 V | 2 |
## CAD (KiCad official)
- Symbol: `K2543-VB`
- Footprint: `Package_TO_SOT_THT:TO-220F-3_Vertical`
- 3D model: TO-220F (KiCad packages3D, STEP)
## Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- **Datasheet:** [VBsemi Elec datasheet](docs/k2543-vb-datasheet.pdf) (8 pp, sha256 `25222eb8197a2128`, retrieved 2026-10-27, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-haiku-5-5` (text), consensus `claude-sonnet-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).
[Datasheet PDF](docs/k2543-vb-datasheet.pdf)