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JY10220X

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Shenzhen JingYang MOSFETs, SOT-23-6L. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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JY10220X

Shenzhen JingYang · MOSFETs · SOT-23-6L

JY10220X from Shenzhen JingYang, in a SOT-23-6L. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 D passive Drain, connected internally to pins 2, 5 and 6; drain-source voltage rated 100 V.
2 D passive Drain, connected internally to pins 1, 5 and 6; continuous drain current 2.6 A, pulsed 20 A.
3 G input Gate, gate-source voltage rated ±20 V with threshold of 1 V min to 3 V max at 250 µA.
4 S passive Source of the N-channel MOSFET.
5 D passive Drain, connected internally to pins 1, 2 and 6; RDS(on) 90 mΩ at VGS = 10 V.
6 D passive Drain, connected internally to pins 1, 2 and 5; RDS(on) 85 mΩ at VGS = 4.5 V.

Key specifications

Parameter Value
Manufacturer Shenzhen JingYang
Package SOT-23-6L
Category Transistors/Thyristors
Pins 6

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage VDSS 100 V 1
Gate-Source Voltage VGSS -20 20 V 1
Drain Current, Continuous ID 2.6 A Note 1a 1
Drain Current, Pulsed ID 20 A Pulsed 1
Maximum Power Dissipation PD 1.6 W Note 1a 1
Maximum Power Dissipation PD 0.8 W Note 1b 1
Operating and Storage Junction Temperature Range TJ, TSTG -55 125 °C 1
Drain-Source Breakdown Voltage BVDSS 100 V VGS = 0 V, ID = 250 µA 2
Zero Gate Voltage Drain Current IDSS 10 µA VDS = 80 V, VGS = 0 V 2
Gate-Body Leakage, Forward IGSSF 100 nA VGS = 20 V, VDS = 0 V 2
Gate-Body Leakage, Reverse IGSSR -100 nA VGS = -20 V, VDS = 0 V 2
Gate Threshold Voltage VGS(th) 1 2.3 3 V VDS = VGS, ID = 250 µA 2
Drain-Source Diode Forward Voltage VSD 0.76 1.2 V VGS = 0 V, IS = 1.3 A (Note 2) 2
Maximum Continuous Drain-Source Diode Forward Current IS 1.3 A 2
Turn-On Delay Time td(on) 6 11 ns VDD = 50 V, ID = 1 A, VGS = 10 V, RGEN = 6 Ω 2
Turn-On Rise Time tr 3.5 7 ns VDD = 50 V, ID = 1 A, VGS = 10 V, RGEN = 6 Ω 2
Turn-Off Delay Time td(off) 23 37 ns VDD = 50 V, ID = 1 A, VGS = 10 V, RGEN = 6 Ω 2
Turn-Off Fall Time tf 3.7 7.4 ns VDD = 50 V, ID = 1 A, VGS = 10 V, RGEN = 6 Ω 2
Total Gate Charge Qg 14 20 nC 2
Thermal Resistance, Junction-to-Ambient RθJA 78 °C/W Note 1a 1
Thermal Resistance, Junction-to-Ambient RθJA 156 °C/W Note 1b, minimum pad 2
Thermal Resistance, Junction-to-Case RθJC 30 °C/W Note 1 1

CAD (KiCad official)

  • Symbol: JY10220X
  • Footprint: Package_TO_SOT_SMD:SOT-23-6
  • 3D model: SOT-23-6L (KiCad packages3D, STEP)
  • 3D model files: jy10220x-etched.step / jy10220x-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); jy10220x.step / jy10220x.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Shenzhen JingYang datasheet (7 pp, sha256 05493012da4aa4b5, retrieved 2026-10-17, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF