# JTDS8050

**JTD** · Bipolar (BJT) · SOT-23

JTDS8050 from JTD, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

## Pinout

| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | BASE | input | Base terminal of the NPN transistor, with VEBO rated at 5 V maximum and VBE(sat) of 1.2 V at IC=500 mA, IB=50 mA. |
| 2 | EMITTER | passive | Emitter terminal of the NPN transistor, with the device rated for a collector current IC of 500 mA and an operating junction and storage temperature range of -55 to +150 °C. |
| 3 | COLLECTOR | passive | Collector terminal of the NPN transistor, with VCBO rated at 40 V and VCEO rated at 25 V maximum, and PC of 300 mW. |

## Key specifications

| Parameter | Value |
|---|---|
| Manufacturer | JTD |
| Package | SOT-23 |
| Category | Transistors/Thyristors |
| Pins | 3 |

## Electrical characteristics

Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).

| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Collector-base breakdown voltage | V(BR)CBO | 40 |  |  | V | IC= 100μA, IE=0 | 1 |
| Collector-emitter breakdown voltage | V(BR)CEO | 25 |  |  | V | IC=1mA, IB=0 | 1 |
| Emitter-base breakdown voltage | V(BR)EBO | 5 |  |  | V | IE=100μA, IC=0 | 1 |
| Collector cut-off current | ICBO |  |  | 0.1 | μA | VCB=40 V, IE=0 | 1 |
| Emitter cut-off current | IEBO |  |  | 0.1 | μA | VEB= 5V, IC=0 | 1 |
| DC current gain | hFE(1) | 120 |  | 400 |  | VCE=1V, I C= 50mA | 1 |
| DC current gain | hFE(2) | 50 |  |  |  | VCE=1V, I C= 500mA | 1 |
| Collector-emitter saturation voltage | VCE(sat) |  |  | 0.6 | V | IC=500 mA, IB= 50mA | 1 |
| Base-emitter saturation voltage | VBE(sat) |  |  | 1.2 | V | IC=500 mA, IB= 50mA | 1 |
| Transition frequency | fT | 150 |  |  | MHz | VCE=6V, I C= 20mA, f=30MHz | 1 |
| Collector-Base Voltage | VCBO |  |  | 40 | V |  | 1 |
| Collector-Emitter Voltage | VCEO |  |  | 25 | V |  | 1 |
| Emitter-Base Voltage | VEBO |  |  | 5 | V |  | 1 |
| Collector Current | IC |  |  | 500 | mA |  | 1 |
| Collector Power Dissipation | PC |  |  | 300 | mW |  | 1 |
| Operation Junction and Storage Temperature Range | TJ,Tstg | -55 |  | 150 | ℃ |  | 1 |
| Thermal Resistance From Junction To Ambient | RΘJA |  | 417 |  | ℃/W |  | 1 |

## CAD (KiCad official)

- Symbol: `JTDS8050`
- Footprint: `Package_TO_SOT_SMD:SOT-23`
- 3D model: SOT-23 (KiCad packages3D, STEP)
- 3D model files: `jtds8050-etched.step` / `jtds8050-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `jtds8050.step` / `jtds8050.glb` are the bare package body.

## Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

- **Datasheet:** [JTD datasheet](docs/jtds8050-datasheet.pdf) (4 pp, sha256 `ff4e6cfc6744606f`, retrieved 2026-10-18, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-haiku-5-5` (text), consensus `claude-sonnet-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).

[Datasheet PDF](docs/jtds8050-datasheet.pdf)