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JST130L-600D

Jiangsu JieJie Microelectronics · Thyristors (SCR)/Modules · SOT-23-3L

JST130L-600D from Jiangsu JieJie Microelectronics, in a SOT-23-3L. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 T1 passive Main terminal T1 of the triac, carrying the on-state current rated at IT(RMS) 0.8 A (TC=75℃ for SOT-23-3L) with repetitive peak off-state voltage VDRM 600/800 V.
2 T2 passive Main terminal T2 of the triac, sharing the same 0.8 A RMS on-state current and 600/800 V repetitive peak off-state and reverse voltage ratings.
3 G input Gate terminal used to trigger the triac, limited to a peak gate current IGM of 1 A and a peak gate power PGM of 1 W with an average gate power PG(AV) of 0.1 W.

Key specifications

Parameter Value
Manufacturer Jiangsu JieJie Microelectronics
Package SOT-23-3L
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Repetitive peak off-state voltage VDRM 600 V Tj=25℃; table prints 600/800, 600V variant 1
Repetitive peak reverse voltage VRRM 600 V Tj=25℃; table prints 600/800, 600V variant 1
Storage junction temperature range Tstg -40 150 ℃ 1
Operating junction temperature range Tj -40 125 ℃ 1
RMS on-state current IT(RMS) 0.8 A SOT-23-3L, TC=75℃ 1
Non repetitive surge peak on-state current ITSM 9 A full cycle, F=50Hz 1
I2t value for fusing I2t 0.45 A2s tp=10ms 1
Critical rate of rise of on-state current, Ⅰ-Ⅱ-Ⅲ dI/dt 50 A/μs IG=2×IGT, Ⅰ-Ⅱ-Ⅲ 1
Critical rate of rise of on-state current, Ⅳ dI/dt 20 A/μs IG=2×IGT, Ⅳ 1
Peak gate current IGM 1 A 1
Average gate power dissipation PG(AV) 0.1 W 1
Peak gate power PGM 1 W 1
Gate trigger current, Ⅰ-Ⅱ-Ⅲ IGT 5 mA VD=12V, Ⅰ-Ⅱ-Ⅲ, D column 2
Gate trigger current, Ⅳ IGT 10 mA VD=12V, Ⅳ, D column 2
Gate trigger voltage VGT 1.3 V ALL quadrants 2
Gate non-trigger voltage VGD 0.2 V VD=VDRM, Tj=125℃, RL=3.3KΩ, ALL quadrants 2
Latching current, Ⅰ-Ⅲ-Ⅳ IL 10 mA IG=1.2IGT, Ⅰ-Ⅲ-Ⅳ, D column 2
Latching current, Ⅱ IL 20 mA IG=1.2IGT, Ⅱ, D column 2
Holding current IH 7 mA IT=100mA, D column 2
Critical rate of rise of off-state voltage dV/dt 30 V/μs VD=2/3VDRM, gate open, Tj=125℃, D column 2
On-state voltage VTM 1.5 V ITM=1.1A, tp=380μs, Tj=25℃ 2
Repetitive peak off-state current IDRM 5 μA VD=VDRM, VR=VRRM, Tj=25℃ 2
Repetitive peak reverse current IRRM 100 μA Tj=125℃ 2
Junction to case thermal resistance (AC) Rth(j-c) 45 ℃/W junction to case (AC), SOT-23-3L 2
Junction to ambient thermal resistance Rth(j-a) 125 ℃/W junction to ambient, SOT-23-3L 2

CAD (KiCad official)

  • Symbol: JST130L-600D
  • Footprint: Package_TO_SOT_SMD:SOT-23-3
  • 3D model: SOT-23-3L (KiCad packages3D, STEP)
  • 3D model files: jst130l-600d-etched.step / jst130l-600d-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); jst130l-600d.step / jst130l-600d.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Jiangsu JieJie Microelectronics datasheet (9 pp, sha256 e9be918f11d8b420, retrieved 2026-10-18, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF