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JSM7N65

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JSMSEMI MOSFETs, TO-220F-3. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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JSM7N65

JSMSEMI · MOSFETs · TO-220F-3

JSM7N65 from JSMSEMI, in a TO-220F-3. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate; controls the channel with a gate-source voltage rating of ±30 V and a threshold of 2.0 to 4.0 V at ID=250μA.
2 D passive Drain; rated for 650 V drain-source voltage and 7.0 A continuous drain current at Tc=25C.
3 S passive Source; connects to the body diode anode, with a continuous diode forward current of 7.0 A.

Key specifications

Parameter Value
Manufacturer JSMSEMI
Package TO-220F-3
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage VDSS 650 V 1
Drain Current - Continuous ID 7 A Tc=25C 1
Drain Current - Continuous ID 4.5 A Tc=100C 1
Drain Current - Pulsed IDM 28 A Note1 1
Gate-Source Voltage VGSS -30 30 V 1
Single Pulsed Avalanche Energy EAS 590 mJ Note2 1
Avalanche Current IAR 7 A Note1 1
Repetitive Avalanche Energy EAR 14 mJ Note1 1
Peak Diode Recovery dv/dt dv/dt 4.5 V/ns Note3 1
Power Dissipation PD 48 W TC=25C 1
Power Dissipation derating PD 0.38 W/C Derate above 25C 1
Operating Junction Temperature Tj 150 C 1
Storage Temperature Range Tstg -55 150 C 1
Thermal Resistance, Junction to Case RθJC 2.6 C/W 1
Thermal Resistance, Junction to Ambient RθJA 62.5 C/W 1
Drain-source Breakdown Voltage BVDSS 650 V VGS=0V, ID=250μA 2
Zero Gate Voltage Drain Current IDSS 1 μA VDS=650V, VGS=0V 2
Zero Gate Voltage Drain Current IDSS 10 μA VDS=520V, Tc=125C 2
Gate-Body Leakage Current, Forward IGSSF 100 nA VGS=+30V, VDS=0V 2
Gate-Body Leakage Current, Reverse IGSSR -100 nA VGS=-30V, VDS=0V 2
Gate Threshold Voltage VGS(th) 2 4 V VDS= VGS, ID=250μA 2
Static Drain-Source On-Resistance RDS(on) 1.2 1.4 Ω VGS=10 V, ID=3.5A 2
Maximum Continuous Drain-Source Diode Forward Current IS 7 A 2
Maximum Pulsed Drain-Source Diode Forward Current ISM 28 A 2
Drain-Source Diode Forward Voltage VSD 1.4 V VGS =0V, IS=7.0A 2
Breakdown Voltage Temperature Coefficient ΔBVDSS/ΔTJ 0.7 V/C ID=250μA (Referenced to 25C) 2
Forward Transconductance gFS 6.5 S VDS=40 V, ID=3.5A (Note4) 2
Input Capacitance Ciss 1380 pF VDS=25V, VGS=0V, f=1.0MHz 2
Output Capacitance Coss 170 pF VDS=25V, VGS=0V, f=1.0MHz 2
Reverse Transfer Capacitance Crss 15 pF VDS=25V, VGS=0V, f=1.0MHz 2
Turn-On Delay Time td(on) 13 ns VDD = 325 V, ID = 7.0 A, RG = 25 Ω (Note4,5) 2
Turn-On Rise Time tr 100 ns VDD = 325 V, ID = 7.0 A, RG = 25 Ω (Note4,5) 2
Turn-Off Delay Time td(off) 126 ns VDD = 325 V, ID = 7.0 A, RG = 25 Ω (Note4,5) 2
Turn-Off Fall Time tf 48 ns VDD = 325 V, ID = 7.0 A, RG = 25 Ω (Note4,5) 2
Total Gate Charge Qg 30 nC VDS = 520 V, ID =7.0 A, VGS = 10 V (Note4,5) 2
Gate-Source Charge Qgs 6 nC VDS = 520 V, ID =7.0 A, VGS = 10 V (Note4,5) 2
Gate-Drain Charge Qgd 14 nC VDS = 520 V, ID =7.0 A, VGS = 10 V (Note4,5) 2
Reverse Recovery Time trr 315 ns VGS =0V, IS=7.0A, dIF/dt=100A/μs (Note4) 2
Reverse Recovery Charge Qrr 2.6 μC VGS =0V, IS=7.0A, dIF/dt=100A/μs (Note4) 2

CAD (KiCad official)

  • Symbol: JSM7N65
  • Footprint: Package_TO_SOT_THT:TO-220F-3_Vertical
  • 3D model: TO-220F-3 (KiCad packages3D, STEP)

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: JSMSEMI datasheet (5 pp, sha256 a8c120fca076e769, retrieved 2026-10-16, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF