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JSM7240

Public Made by Adom

by adom

JSMSEMI MOSFETs, DFN-8(4.9x5.8). Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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3D Model

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Symbol & Footprint

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Datasheet

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Contents

README

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JSM7240

JSMSEMI · MOSFETs · DFN-8(4.9x5.8)

JSM7240 from JSMSEMI, in a DFN-8(4.9x5.8). Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 S passive Source terminal of the 40 V N-channel MOSFET, which carries the source-side return current with the gate rated at VGS ±20 V relative to this pin.
2 S passive Source terminal of the 40 V N-channel MOSFET, which carries the source-side return current with the gate rated at VGS ±20 V relative to this pin.
3 S passive Source terminal of the 40 V N-channel MOSFET, which carries the source-side return current with the gate rated at VGS ±20 V relative to this pin.
4 G input Gate terminal that controls the MOSFET; the datasheet rates gate-source voltage at ±20 V and VGS(th) at 1.4 to 2.4 V (typical 1.9 V).
5 D passive Drain terminal of the MOSFET, rated for a drain-source voltage of 40 V and a continuous drain current of 40 A at TC=25°C.
6 D passive Drain terminal of the MOSFET, rated for a drain-source voltage of 40 V and a continuous drain current of 40 A at TC=25°C.
7 D passive Drain terminal of the MOSFET, rated for a drain-source voltage of 40 V and a continuous drain current of 40 A at TC=25°C.
8 D passive Drain terminal of the MOSFET, rated for a drain-source voltage of 40 V and a continuous drain current of 40 A at TC=25°C.
9 EP passive Exposed pad (from the footprint; not named in the datasheet pin table).

Key specifications

Parameter Value
Manufacturer JSMSEMI
Package DFN-8(4.9x5.8)
Category Transistors/Thyristors
Pins 9

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage VDS 40 V 1
Gate-Source Voltage VGS -20 20 V 1
Continuous Drain Current ID 40 A TC=25°C 1
Continuous Drain Current (steady-state, package/board) IDSM 19 A TA=25°C 1
Pulsed Drain Current IDM 144 A 1
Avalanche Current IAS, IAR 40 A 1
Avalanche Energy EAS, EAR 80 mJ L=0.1mH 1
Power Dissipation PD 36.7 W TC=25°C 1
Power Dissipation PDSM 3.1 W TA=25°C 1
Junction and Storage Temperature Range TJ, TSTG -55 150 °C 1
Drain-Source Breakdown Voltage BVDSS 40 V ID=250µA, VGS=0V 2
Zero Gate Voltage Drain Current IDSS 1 µA VDS=40V, VGS=0V 2
Gate-Body Leakage Current IGSS 100 nA VDS=0V, VGS= ±20V 2
Gate Threshold Voltage VGS(th) 1.4 1.9 2.4 V VDS=VGS ID=250µA 2
Static Drain-Source On-Resistance RDS(ON) 4.2 5.5 mΩ VGS=10V, ID=20A 2
Static Drain-Source On-Resistance RDS(ON) 5.6 7 mΩ VGS=4.5V, ID=15A 2
Diode Forward Voltage VSD 0.7 1 V IS=1A, VGS=0V 2
Input Capacitance Ciss 1460 1830 2200 pF VGS=0V, VDS=20V, f=1MHz 2
Output Capacitance Coss 365 521 680 pF VGS=0V, VDS=20V, f=1MHz 2
Reverse Transfer Capacitance Crss 20 43 73 pF VGS=0V, VDS=20V, f=1MHz 2
Gate Resistance Rg 0.4 0.8 1.2 Ω VGS=0V, VDS=0V, f=1MHz 2
Total Gate Charge (10V) Qg 22 27.8 35 nC VGS=10V, VDS=20V, ID=20A 2
Total Gate Charge (4.5V) Qg 10 12.8 15 nC 2
Gate-Source Charge Qgs 3 3.9 5 nC VGS=10V, VDS=20V, ID=20A 2
Gate-Drain Charge Qgd 2 6 10 nC VGS=10V, VDS=20V, ID=20A 2
Body Diode Reverse Recovery Time trr 11 16.5 21 ns IF=20A, dI/dt=500A/µs 2
Body Diode Reverse Recovery Charge Qrr 28 40 52 nC IF=20A, dI/dt=500A/µs 2
Maximum Body-Diode Continuous Current IS 40 A 2
On-State Drain Current ID(ON) 144 A VGS=10V, VDS=5V 2
Forward Transconductance gFS 67 S VDS=5V, ID=20A 2
Turn-On Delay Time tD(on) 7.2 ns VGS=10V, VDS=20V, RL=1Ω, RGEN=3Ω 2
Turn-On Rise Time tr 3 ns VGS=10V, VDS=20V, RL=1Ω, RGEN=3Ω 2
Turn-Off Delay Time tD(off) 23 ns VGS=10V, VDS=20V, RL=1Ω, RGEN=3Ω 2
Turn-Off Fall Time tf 3.5 ns VGS=10V, VDS=20V, RL=1Ω, RGEN=3Ω 2
Maximum Junction-to-Ambient, t≤10s RθJA 30 40 °C/W t ≤ 10s 1
Maximum Junction-to-Ambient, Steady-State RθJA 60 75 °C/W Steady-State 1
Maximum Junction-to-Case, Steady-State RθJC 2.8 3.4 °C/W Steady-State 1

CAD (KiCad official)

  • Symbol: JSM7240
  • Footprint: Package_DFN_QFN:DFN-S-8-1EP_6x5mm_P1.27mm
  • 3D model: DFN-8(4.9x5.8) (KiCad packages3D, STEP)
  • 3D model files: jsm7240-etched.step / jsm7240-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); jsm7240.step / jsm7240.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: JSMSEMI datasheet (7 pp, sha256 0bc9fb8bf760e2d1, retrieved 2026-10-09, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF