component
JSM6764
Public Made by Adomby adom
JSMSEMI MOSFETs, DFN-8(5x6). Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
← Commit history
jsm6764: specified limits as data (metadata.characteristics, 37 rows from the datasheet)
2 files changed
+496−1
README.md+44@@ -27,6 +27,50 @@ JSM6764 from JSMSEMI, in a DFN-8(5x6). Pinout and pin descriptions extracted fro | Category | Transistors/Thyristors | | Pins | 9 | +## Electrical characteristics++Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).++| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |+|---|---|---|---|---|---|---|---|+| Drain-Source Voltage | VDS | | | 30 | V | | 1 |+| Gate-Source Voltage | VGS | -12 | | 12 | V | | 1 |+| Continuous Drain Current | ID | | | 85 | A | TC=25°C | 1 |+| Continuous Drain Current | IDSM | | | 20 | A | TA=25°C | 1 |+| Pulsed Drain Current | IDM | | | 190 | A | Note C: single pulse, width limited by TJ(MAX)=150°C | 1 |+| Avalanche Current | IAS | | | 42 | A | | 1 |+| Avalanche Energy | EAS | | | 44 | mJ | L=0.05mH | 1 |+| VDS Spike | VSPIKE | | | 36 | V | 10µs | 1 |+| Power Dissipation | PD | | | 37 | W | TC=25°C | 1 |+| Power Dissipation | PDSM | | | 6.2 | W | TA=25°C | 1 |+| Junction and Storage Temperature Range | TJ, TSTG | -55 | | 150 | °C | | 1 |+| Maximum Junction-to-Case Thermal Resistance | RθJC | | 2.4 | 3 | °C/W | Steady-State | 1 |+| Maximum Junction-to-Ambient Thermal Resistance | RθJA | | 40 | 50 | °C/W | Steady-State | 1 |+| Maximum Junction-to-Ambient Thermal Resistance | RθJA | | 15 | | °C/W | t ≤ 10s | 1 |+| Drain-Source Breakdown Voltage | BVDSS | 30 | | | V | ID=10mA, VGS=0V | 2 |+| Gate-Body Leakage Current | IGSS | -100 | | 100 | nA | VDS=0V, VGS=±12V | 2 |+| Gate Threshold Voltage | VGS(th) | 1.1 | 1.5 | 1.9 | V | VDS=VGS, ID=250µA | 2 |+| Zero Gate Voltage Drain Current | IDSS | | | 0.5 | uA | VDS=30V, VGS=0V | 2 |+| Diode Forward Voltage | VSD | | 0.5 | 0.7 | V | IS=1A, VGS=0V | 2 |+| Maximum Body-Diode Continuous Current | IS | | | 30 | A | | 2 |+| Gate Resistance | Rg | 0.9 | 1.8 | 2.7 | Ω | f=1MHz | 2 |+| Static Drain-Source On-Resistance | RDS(ON) | | 3.8 | 4 | mΩ | VGS=10V, ID=20A | 2 |+| Static Drain-Source On-Resistance | RDS(ON) | | 4.5 | 5 | mΩ | VGS=4.5V, ID=20A | 2 |+| Forward Transconductance | gFS | | 167 | | S | VDS=5V, ID=20A | 2 |+| Input Capacitance | Ciss | | 2120 | | pF | VGS=0V, VDS=15V, f=1MHz | 2 |+| Output Capacitance | Coss | | 700 | | pF | VGS=0V, VDS=15V, f=1MHz | 2 |+| Reverse Transfer Capacitance | Crss | | 69 | | pF | VGS=0V, VDS=15V, f=1MHz | 2 |+| Total Gate Charge | Qg (10V) | | 37 | | nC | VGS=10V, VDS=15V, ID=20A | 2 |+| Total Gate Charge | Qg (4.5V) | | 16.8 | | nC | | 2 |+| Gate Source Charge | Qgs | | 5 | | nC | | 2 |+| Gate Drain Charge | Qgd | | 4.9 | | nC | | 2 |+| Turn-On Delay Time | tD(on) | | 7 | | ns | VGS=10V, VDS=15V, RL=0.75Ω, RGEN=3Ω | 2 |+| Turn-On Rise Time | tr | | 3.5 | | ns | VGS=10V, VDS=15V, RL=0.75Ω, RGEN=3Ω | 2 |+| Turn-Off Delay Time | tD(off) | | 36 | | ns | VGS=10V, VDS=15V, RL=0.75Ω, RGEN=3Ω | 2 |+| Turn-Off Fall Time | tf | | 6 | | ns | VGS=10V, VDS=15V, RL=0.75Ω, RGEN=3Ω | 2 |+| Body Diode Reverse Recovery Time | trr | | 15.5 | | ns | IF=20A, dI/dt=500A/µs | 2 |+| Body Diode Reverse Recovery Charge | Qrr | | 33 | | nC | IF=20A, dI/dt=500A/µs | 2 |+ ## CAD (KiCad official) - Symbol: `JSM6764`
page.json+452−1@@ -185,6 +185,457 @@ "Package": "DFN-8(5x6)", "Category": "Transistors/Thyristors", "Pins": "9"+ },+ "characteristics": {+ "version": 1,+ "source": "datasheet",+ "datasheet_sha256": "2aeeb5ccf0c8fe40",+ "rows": [+ {+ "name": "Drain-Source Voltage",+ "symbol": "VDS",+ "kind": "absolute_maximum",+ "unit": "V",+ "min": null,+ "typ": null,+ "max": 30,+ "conditions": "",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Gate-Source Voltage",+ "symbol": "VGS",+ "kind": "absolute_maximum",+ "unit": "V",+ "min": -12,+ "typ": null,+ "max": 12,+ "conditions": "",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Continuous Drain Current",+ "symbol": "ID",+ "kind": "absolute_maximum",+ "unit": "A",+ "min": null,+ "typ": null,+ "max": 85,+ "conditions": "TC=25°C",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Continuous Drain Current",+ "symbol": "IDSM",+ "kind": "absolute_maximum",+ "unit": "A",+ "min": null,+ "typ": null,+ "max": 20,+ "conditions": "TA=25°C",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Pulsed Drain Current",+ "symbol": "IDM",+ "kind": "absolute_maximum",+ "unit": "A",+ "min": null,+ "typ": null,+ "max": 190,+ "conditions": "Note C: single pulse, width limited by TJ(MAX)=150°C",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Avalanche Current",+ "symbol": "IAS",+ "kind": "absolute_maximum",+ "unit": "A",+ "min": null,+ "typ": null,+ "max": 42,+ "conditions": "",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Avalanche Energy",+ "symbol": "EAS",+ "kind": "absolute_maximum",+ "unit": "mJ",+ "min": null,+ "typ": null,+ "max": 44,+ "conditions": "L=0.05mH",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "VDS Spike",+ "symbol": "VSPIKE",+ "kind": "absolute_maximum",+ "unit": "V",+ "min": null,+ "typ": null,+ "max": 36,+ "conditions": "10µs",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Power Dissipation",+ "symbol": "PD",+ "kind": "absolute_maximum",+ "unit": "W",+ "min": null,+ "typ": null,+ "max": 37,+ "conditions": "TC=25°C",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Power Dissipation",+ "symbol": "PDSM",+ "kind": "absolute_maximum",+ "unit": "W",+ "min": null,+ "typ": null,+ "max": 6.2,+ "conditions": "TA=25°C",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Junction and Storage Temperature Range",+ "symbol": "TJ, TSTG",+ "kind": "absolute_maximum",+ "unit": "°C",+ "min": -55,+ "typ": null,+ "max": 150,+ "conditions": "",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Maximum Junction-to-Case Thermal Resistance",+ "symbol": "RθJC",+ "kind": "thermal",+ "unit": "°C/W",+ "min": null,+ "typ": 2.4,+ "max": 3,+ "conditions": "Steady-State",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Maximum Junction-to-Ambient Thermal Resistance",+ "symbol": "RθJA",+ "kind": "thermal",+ "unit": "°C/W",+ "min": null,+ "typ": 40,+ "max": 50,+ "conditions": "Steady-State",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Maximum Junction-to-Ambient Thermal Resistance",+ "symbol": "RθJA",+ "kind": "thermal",+ "unit": "°C/W",+ "min": null,+ "typ": 15,+ "max": null,+ "conditions": "t ≤ 10s",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Drain-Source Breakdown Voltage",+ "symbol": "BVDSS",+ "kind": "electrical",+ "unit": "V",+ "min": 30,+ "typ": null,+ "max": null,+ "conditions": "ID=10mA, VGS=0V",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Gate-Body Leakage Current",+ "symbol": "IGSS",+ "kind": "electrical",+ "unit": "nA",+ "min": -100,+ "typ": null,+ "max": 100,+ "conditions": "VDS=0V, VGS=±12V",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Gate Threshold Voltage",+ "symbol": "VGS(th)",+ "kind": "electrical",+ "unit": "V",+ "min": 1.1,+ "typ": 1.5,+ "max": 1.9,+ "conditions": "VDS=VGS, ID=250µA",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Zero Gate Voltage Drain Current",+ "symbol": "IDSS",+ "kind": "electrical",+ "unit": "uA",+ "min": null,+ "typ": null,+ "max": 0.5,+ "conditions": "VDS=30V, VGS=0V",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Diode Forward Voltage",+ "symbol": "VSD",+ "kind": "electrical",+ "unit": "V",+ "min": null,+ "typ": 0.5,+ "max": 0.7,+ "conditions": "IS=1A, VGS=0V",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Maximum Body-Diode Continuous Current",+ "symbol": "IS",+ "kind": "electrical",+ "unit": "A",+ "min": null,+ "typ": null,+ "max": 30,+ "conditions": "",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Gate Resistance",+ "symbol": "Rg",+ "kind": "electrical",+ "unit": "Ω",+ "min": 0.9,+ "typ": 1.8,+ "max": 2.7,+ "conditions": "f=1MHz",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Static Drain-Source On-Resistance",+ "symbol": "RDS(ON)",+ "kind": "electrical",+ "unit": "mΩ",+ "min": null,+ "typ": 3.8,+ "max": 4,+ "conditions": "VGS=10V, ID=20A",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Static Drain-Source On-Resistance",+ "symbol": "RDS(ON)",+ "kind": "electrical",+ "unit": "mΩ",+ "min": null,+ "typ": 4.5,+ "max": 5,+ "conditions": "VGS=4.5V, ID=20A",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Forward Transconductance",+ "symbol": "gFS",+ "kind": "electrical",+ "unit": "S",+ "min": null,+ "typ": 167,+ "max": null,+ "conditions": "VDS=5V, ID=20A",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Input Capacitance",+ "symbol": "Ciss",+ "kind": "electrical",+ "unit": "pF",+ "min": null,+ "typ": 2120,+ "max": null,+ "conditions": "VGS=0V, VDS=15V, f=1MHz",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Output Capacitance",+ "symbol": "Coss",+ "kind": "electrical",+ "unit": "pF",+ "min": null,+ "typ": 700,+ "max": null,+ "conditions": "VGS=0V, VDS=15V, f=1MHz",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Reverse Transfer Capacitance",+ "symbol": "Crss",+ "kind": "electrical",+ "unit": "pF",+ "min": null,+ "typ": 69,+ "max": null,+ "conditions": "VGS=0V, VDS=15V, f=1MHz",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Total Gate Charge",+ "symbol": "Qg (10V)",+ "kind": "electrical",+ "unit": "nC",+ "min": null,+ "typ": 37,+ "max": null,+ "conditions": "VGS=10V, VDS=15V, ID=20A",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Total Gate Charge",+ "symbol": "Qg (4.5V)",+ "kind": "electrical",+ "unit": "nC",+ "min": null,+ "typ": 16.8,+ "max": null,+ "conditions": "",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Gate Source Charge",+ "symbol": "Qgs",+ "kind": "electrical",+ "unit": "nC",+ "min": null,+ "typ": 5,+ "max": null,+ "conditions": "",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Gate Drain Charge",+ "symbol": "Qgd",+ "kind": "electrical",+ "unit": "nC",+ "min": null,+ "typ": 4.9,+ "max": null,+ "conditions": "",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Turn-On Delay Time",+ "symbol": "tD(on)",+ "kind": "electrical",+ "unit": "ns",+ "min": null,+ "typ": 7,+ "max": null,+ "conditions": "VGS=10V, VDS=15V, RL=0.75Ω, RGEN=3Ω",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Turn-On Rise Time",+ "symbol": "tr",+ "kind": "electrical",+ "unit": "ns",+ "min": null,+ "typ": 3.5,+ "max": null,+ "conditions": "VGS=10V, VDS=15V, RL=0.75Ω, RGEN=3Ω",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Turn-Off Delay Time",+ "symbol": "tD(off)",+ "kind": "electrical",+ "unit": "ns",+ "min": null,+ "typ": 36,+ "max": null,+ "conditions": "VGS=10V, VDS=15V, RL=0.75Ω, RGEN=3Ω",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Turn-Off Fall Time",+ "symbol": "tf",+ "kind": "electrical",+ "unit": "ns",+ "min": null,+ "typ": 6,+ "max": null,+ "conditions": "VGS=10V, VDS=15V, RL=0.75Ω, RGEN=3Ω",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Body Diode Reverse Recovery Time",+ "symbol": "trr",+ "kind": "electrical",+ "unit": "ns",+ "min": null,+ "typ": 15.5,+ "max": null,+ "conditions": "IF=20A, dI/dt=500A/µs",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Body Diode Reverse Recovery Charge",+ "symbol": "Qrr",+ "kind": "electrical",+ "unit": "nC",+ "min": null,+ "typ": 33,+ "max": null,+ "conditions": "IF=20A, dI/dt=500A/µs",+ "source_page": 2,+ "source": "datasheet"+ }+ ] } }, "variants": [],@@ -226,4 +677,4 @@ "visibility": { "public": true }-}+}