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JSM6764
Public Made by Adomby adom
JSMSEMI MOSFETs, DFN-8(5x6). Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownJSM6764
JSMSEMI · MOSFETs · DFN-8(5x6)
JSM6764 from JSMSEMI, in a DFN-8(5x6). Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | S | passive | Source of the N-channel MOSFET; pin 1 is marked by the dot on the package. |
| 2 | S | passive | Source of the N-channel MOSFET. |
| 3 | S | passive | Source of the N-channel MOSFET. |
| 4 | G | input | Gate of the N-channel MOSFET, with VGS rated at ±12V maximum. |
| 5 | D | passive | Drain of the N-channel MOSFET, with VDS rated at 30V maximum. |
| 6 | D | passive | Drain of the N-channel MOSFET, with VDS rated at 30V maximum. |
| 7 | D | passive | Drain of the N-channel MOSFET, with VDS rated at 30V maximum. |
| 8 | D | passive | Drain of the N-channel MOSFET, with VDS rated at 30V maximum. |
| 9 | EP | passive | Exposed pad (from the footprint; not named in the datasheet pin table). |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | JSMSEMI |
| Package | DFN-8(5x6) |
| Category | Transistors/Thyristors |
| Pins | 9 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS | 30 | V | 1 | |||
| Gate-Source Voltage | VGS | -12 | 12 | V | 1 | ||
| Continuous Drain Current | ID | 85 | A | TC=25°C | 1 | ||
| Continuous Drain Current | IDSM | 20 | A | TA=25°C | 1 | ||
| Pulsed Drain Current | IDM | 190 | A | Note C: single pulse, width limited by TJ(MAX)=150°C | 1 | ||
| Avalanche Current | IAS | 42 | A | 1 | |||
| Avalanche Energy | EAS | 44 | mJ | L=0.05mH | 1 | ||
| VDS Spike | VSPIKE | 36 | V | 10µs | 1 | ||
| Power Dissipation | PD | 37 | W | TC=25°C | 1 | ||
| Power Dissipation | PDSM | 6.2 | W | TA=25°C | 1 | ||
| Junction and Storage Temperature Range | TJ, TSTG | -55 | 150 | °C | 1 | ||
| Maximum Junction-to-Case Thermal Resistance | RθJC | 2.4 | 3 | °C/W | Steady-State | 1 | |
| Maximum Junction-to-Ambient Thermal Resistance | RθJA | 40 | 50 | °C/W | Steady-State | 1 | |
| Maximum Junction-to-Ambient Thermal Resistance | RθJA | 15 | °C/W | t ≤ 10s | 1 | ||
| Drain-Source Breakdown Voltage | BVDSS | 30 | V | ID=10mA, VGS=0V | 2 | ||
| Gate-Body Leakage Current | IGSS | -100 | 100 | nA | VDS=0V, VGS=±12V | 2 | |
| Gate Threshold Voltage | VGS(th) | 1.1 | 1.5 | 1.9 | V | VDS=VGS, ID=250µA | 2 |
| Zero Gate Voltage Drain Current | IDSS | 0.5 | uA | VDS=30V, VGS=0V | 2 | ||
| Diode Forward Voltage | VSD | 0.5 | 0.7 | V | IS=1A, VGS=0V | 2 | |
| Maximum Body-Diode Continuous Current | IS | 30 | A | 2 | |||
| Gate Resistance | Rg | 0.9 | 1.8 | 2.7 | Ω | f=1MHz | 2 |
| Static Drain-Source On-Resistance | RDS(ON) | 3.8 | 4 | mΩ | VGS=10V, ID=20A | 2 | |
| Static Drain-Source On-Resistance | RDS(ON) | 4.5 | 5 | mΩ | VGS=4.5V, ID=20A | 2 | |
| Forward Transconductance | gFS | 167 | S | VDS=5V, ID=20A | 2 | ||
| Input Capacitance | Ciss | 2120 | pF | VGS=0V, VDS=15V, f=1MHz | 2 | ||
| Output Capacitance | Coss | 700 | pF | VGS=0V, VDS=15V, f=1MHz | 2 | ||
| Reverse Transfer Capacitance | Crss | 69 | pF | VGS=0V, VDS=15V, f=1MHz | 2 | ||
| Total Gate Charge | Qg (10V) | 37 | nC | VGS=10V, VDS=15V, ID=20A | 2 | ||
| Total Gate Charge | Qg (4.5V) | 16.8 | nC | 2 | |||
| Gate Source Charge | Qgs | 5 | nC | 2 | |||
| Gate Drain Charge | Qgd | 4.9 | nC | 2 | |||
| Turn-On Delay Time | tD(on) | 7 | ns | VGS=10V, VDS=15V, RL=0.75Ω, RGEN=3Ω | 2 | ||
| Turn-On Rise Time | tr | 3.5 | ns | VGS=10V, VDS=15V, RL=0.75Ω, RGEN=3Ω | 2 | ||
| Turn-Off Delay Time | tD(off) | 36 | ns | VGS=10V, VDS=15V, RL=0.75Ω, RGEN=3Ω | 2 | ||
| Turn-Off Fall Time | tf | 6 | ns | VGS=10V, VDS=15V, RL=0.75Ω, RGEN=3Ω | 2 | ||
| Body Diode Reverse Recovery Time | trr | 15.5 | ns | IF=20A, dI/dt=500A/µs | 2 | ||
| Body Diode Reverse Recovery Charge | Qrr | 33 | nC | IF=20A, dI/dt=500A/µs | 2 |
CAD (KiCad official)
- Symbol:
JSM6764 - Footprint:
Package_DFN_QFN:DFN-S-8-1EP_6x5mm_P1.27mm - 3D model: DFN-8(5x6) (KiCad packages3D, STEP)
- 3D model files:
jsm6764-etched.step/jsm6764-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);jsm6764.step/jsm6764.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: JSMSEMI datasheet (7 pp, sha256
2aeeb5ccf0c8fe40, retrieved 2026-10-09, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).