component
JSM6333C
Public Made by Adomby adom
JSMSEMI MOSFETs, SOT-23-6L. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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JSM6333C
JSMSEMI · MOSFETs · SOT-23-6L
JSM6333C from JSMSEMI, in a SOT-23-6L. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G1 | input | Gate of the N-channel MOSFET (Q1), with a rated gate-source voltage of ±20 V. |
| 2 | S2 | passive | Source of the P-channel MOSFET (Q2), with a rated drain-source voltage of -30 V. |
| 3 | G2 | input | Gate of the P-channel MOSFET (Q2), with a rated gate-source voltage of ±20 V. |
| 4 | D2 | passive | Drain of the P-channel MOSFET (Q2), with a continuous drain current of -2.5 A and a pulsed drain current of -8 A. |
| 5 | S1 | passive | Source of the N-channel MOSFET (Q1), with a rated drain-source voltage of 30 V. |
| 6 | D1 | passive | Drain of the N-channel MOSFET (Q1), with a continuous drain current of 3 A and a pulsed drain current of 8 A. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | JSMSEMI |
| Package | SOT-23-6L |
| Category | Transistors/Thyristors |
| Pins | 6 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Breakdown Voltage (N-channel) | BVDSS | 30 | V | VGS=0V, ID=250μA | 2 | ||
| Zero Gate Voltage Drain Current (N-channel) | IDSS | 1 | μA | VDS=30V, VGS=0V | 2 | ||
| Gate-Body Leakage Current (N-channel) | IGSS | -100 | 100 | nA | VGS=±20V, VDS=0V | 2 | |
| Gate Threshold Voltage (N-channel) | VGS(th) | 1 | 1.5 | 3 | V | VDS=VGS, ID=250μA | 2 |
| Static Drain-Source On-Resistance (N-channel) | RDS(ON) | 52 | 95 | mΩ | VGS=10V, ID=2.5A | 2 | |
| Static Drain-Source On-Resistance (N-channel) | RDS(ON) | 73 | 150 | mΩ | VGS=4.5V, ID=2.0A | 2 | |
| Drain-Source Breakdown Voltage (P-channel) | BVDSS | -30 | V | VGS=0V, ID=-250μA | 3 | ||
| Zero Gate Voltage Drain Current (P-channel) | IDSS | -1 | μA | VDS=-30V, VGS=0V | 3 | ||
| Gate-Body Leakage Current (P-channel) | IGSS | -100 | 100 | nA | VGS=±20V, VDS=0V | 3 | |
| Gate Threshold Voltage (P-channel) | VGS(th) | -1 | -1.5 | -3 | V | VDS=VGS, ID=-250μA | 3 |
| Static Drain-Source On-Resistance (P-channel) | RDS(ON) | 65 | 130 | mΩ | VGS=-10V, ID=-2.0A | 3 | |
| Static Drain-Source On-Resistance (P-channel) | RDS(ON) | 95 | 220 | mΩ | VGS=-4.5V, ID=-1.7A | 3 | |
| Drain-Source Voltage (N-channel) | VDS | 30 | V | TA=25℃ unless otherwise noted | 1 | ||
| Drain-Source Voltage (P-channel) | VDS | -30 | V | TA=25℃ unless otherwise noted | 1 | ||
| Gate-Source Voltage (N-channel) | VGS | -20 | 20 | V | TA=25℃ unless otherwise noted | 1 | |
| Gate-Source Voltage (P-channel) | VGS | -20 | 20 | V | TA=25℃ unless otherwise noted | 1 | |
| Drain Current (N-channel) | ID | 3 | A | TA=25℃ unless otherwise noted | 1 | ||
| Drain Current (P-channel) | ID | -2.5 | A | TA=25℃ unless otherwise noted | 1 | ||
| Pulsed Drain Current (N-channel) | IDM | 8 | A | Note A: pulse width ≤300μs, duty cycle ≤2% | 1 | ||
| Pulsed Drain Current (P-channel) | IDM | -8 | A | Note A: pulse width ≤300μs, duty cycle ≤2% | 1 | ||
| Total Power Dissipation | PD | 0.95 | W | TA=25℃ unless otherwise noted | 1 | ||
| Junction and Storage Temperature Range | TJ,TSTG | -55 | 150 | ℃ | 1 | ||
| Thermal Resistance, Junction-to-Ambient | RθJA | 62.5 | ℃/W | Note B: mounted on 1 in² pad of 2oz copper | 1 |
Materials and finish
As the datasheet states them (page.json metadata.appearance; the 3D model's colours follow it).
| Part | Material | Colour / plating | Datasheet says | Page |
|---|---|---|---|---|
| contacts | copper | mounting surface of the drain pins. RθJC is guaranteed by design, while RθJA is determined by the board design. The maximum rating presented here is based on mounting on a 1 in 2 pad of 2oz copper. | 2 |
CAD (KiCad official)
- Symbol:
JSM6333C - Footprint:
Package_TO_SOT_SMD:SOT-23-6 - 3D model: SOT-23-6L (KiCad packages3D, STEP)
- 3D model files:
jsm6333c-etched.step/jsm6333c-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);jsm6333c.step/jsm6333c.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: JSMSEMI datasheet (8 pp, sha256
0dfafe87d3b45517, retrieved 2026-10-18, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).
# JSM6333C
**JSMSEMI** · MOSFETs · SOT-23-6L
JSM6333C from JSMSEMI, in a SOT-23-6L. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
## Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G1 | input | Gate of the N-channel MOSFET (Q1), with a rated gate-source voltage of ±20 V. |
| 2 | S2 | passive | Source of the P-channel MOSFET (Q2), with a rated drain-source voltage of -30 V. |
| 3 | G2 | input | Gate of the P-channel MOSFET (Q2), with a rated gate-source voltage of ±20 V. |
| 4 | D2 | passive | Drain of the P-channel MOSFET (Q2), with a continuous drain current of -2.5 A and a pulsed drain current of -8 A. |
| 5 | S1 | passive | Source of the N-channel MOSFET (Q1), with a rated drain-source voltage of 30 V. |
| 6 | D1 | passive | Drain of the N-channel MOSFET (Q1), with a continuous drain current of 3 A and a pulsed drain current of 8 A. |
## Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | JSMSEMI |
| Package | SOT-23-6L |
| Category | Transistors/Thyristors |
| Pins | 6 |
## Electrical characteristics
Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Breakdown Voltage (N-channel) | BVDSS | 30 | | | V | VGS=0V, ID=250μA | 2 |
| Zero Gate Voltage Drain Current (N-channel) | IDSS | | | 1 | μA | VDS=30V, VGS=0V | 2 |
| Gate-Body Leakage Current (N-channel) | IGSS | -100 | | 100 | nA | VGS=±20V, VDS=0V | 2 |
| Gate Threshold Voltage (N-channel) | VGS(th) | 1 | 1.5 | 3 | V | VDS=VGS, ID=250μA | 2 |
| Static Drain-Source On-Resistance (N-channel) | RDS(ON) | | 52 | 95 | mΩ | VGS=10V, ID=2.5A | 2 |
| Static Drain-Source On-Resistance (N-channel) | RDS(ON) | | 73 | 150 | mΩ | VGS=4.5V, ID=2.0A | 2 |
| Drain-Source Breakdown Voltage (P-channel) | BVDSS | -30 | | | V | VGS=0V, ID=-250μA | 3 |
| Zero Gate Voltage Drain Current (P-channel) | IDSS | | | -1 | μA | VDS=-30V, VGS=0V | 3 |
| Gate-Body Leakage Current (P-channel) | IGSS | -100 | | 100 | nA | VGS=±20V, VDS=0V | 3 |
| Gate Threshold Voltage (P-channel) | VGS(th) | -1 | -1.5 | -3 | V | VDS=VGS, ID=-250μA | 3 |
| Static Drain-Source On-Resistance (P-channel) | RDS(ON) | | 65 | 130 | mΩ | VGS=-10V, ID=-2.0A | 3 |
| Static Drain-Source On-Resistance (P-channel) | RDS(ON) | | 95 | 220 | mΩ | VGS=-4.5V, ID=-1.7A | 3 |
| Drain-Source Voltage (N-channel) | VDS | | | 30 | V | TA=25℃ unless otherwise noted | 1 |
| Drain-Source Voltage (P-channel) | VDS | | | -30 | V | TA=25℃ unless otherwise noted | 1 |
| Gate-Source Voltage (N-channel) | VGS | -20 | | 20 | V | TA=25℃ unless otherwise noted | 1 |
| Gate-Source Voltage (P-channel) | VGS | -20 | | 20 | V | TA=25℃ unless otherwise noted | 1 |
| Drain Current (N-channel) | ID | | | 3 | A | TA=25℃ unless otherwise noted | 1 |
| Drain Current (P-channel) | ID | | | -2.5 | A | TA=25℃ unless otherwise noted | 1 |
| Pulsed Drain Current (N-channel) | IDM | | | 8 | A | Note A: pulse width ≤300μs, duty cycle ≤2% | 1 |
| Pulsed Drain Current (P-channel) | IDM | | | -8 | A | Note A: pulse width ≤300μs, duty cycle ≤2% | 1 |
| Total Power Dissipation | PD | | | 0.95 | W | TA=25℃ unless otherwise noted | 1 |
| Junction and Storage Temperature Range | TJ,TSTG | -55 | | 150 | ℃ | | 1 |
| Thermal Resistance, Junction-to-Ambient | RθJA | | | 62.5 | ℃/W | Note B: mounted on 1 in² pad of 2oz copper | 1 |
## Materials and finish
As the datasheet states them (page.json `metadata.appearance`; the 3D model's colours follow it).
| Part | Material | Colour / plating | Datasheet says | Page |
|---|---|---|---|---|
| contacts | copper | | mounting surface of the drain pins. RθJC is guaranteed by design, while RθJA is determined by the board design. The maximum rating presented here is based on mounting on a 1 in 2 pad of 2oz copper. | 2 |
## CAD (KiCad official)
- Symbol: `JSM6333C`
- Footprint: `Package_TO_SOT_SMD:SOT-23-6`
- 3D model: SOT-23-6L (KiCad packages3D, STEP)
- 3D model files: `jsm6333c-etched.step` / `jsm6333c-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `jsm6333c.step` / `jsm6333c.glb` are the bare package body.
## Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- **Datasheet:** [JSMSEMI datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8588946956597276672) (8 pp, sha256 `0dfafe87d3b45517`, retrieved 2026-10-18, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-sonnet-5-5` (text+vision), consensus `claude-opus-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).
[Datasheet PDF](docs/jsm6333c-datasheet.pdf)