component
JSM50N06D
Public Made by Adomby adom
JSMSEMI MOSFETs, TO-252. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
Generated by kicad-footprint-generator · KiCad file format 20260206
| Name | Last updated |
|---|---|
| docs | 7d ago |
| viewers | 7d ago |
| jsm50n06d-etched.glb | 7d ago |
| jsm50n06d-etched.step | 7d ago |
| jsm50n06d-hero.glb | 7d ago |
| jsm50n06d-hero.overlay.json | 7d ago |
| jsm50n06d.glb | 7d ago |
| jsm50n06d.kicad_mod | 7d ago |
| jsm50n06d.kicad_sym | 7d ago |
| jsm50n06d.lbr | 7d ago |
| jsm50n06d.step | 7d ago |
| package.json | 7d ago |
| page.json | 7d ago |
| README.md | 7d ago |
JSM50N06D
JSMSEMI · MOSFETs · TO-252
JSM50N06D from JSMSEMI, in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate; gate-source voltage limited to ±20 V with threshold of 2.1 V min to 4 V max at 250 µA. |
| 2 | D | passive | Drain, middle lead connected to the exposed tab; VDS 60 V, continuous drain current 50 A at TC=25 °C (bondwire limited). |
| 3 | S | passive | Source; body diode continuous forward current 100 A and pulsed 400 A. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | JSMSEMI |
| Package | TO-252 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Continuous drain current | ID | 50 | A | TC = 25 °C | 1 | ||
| Pulsed drain current | ID,pulse | 400 | A | TC = 25 °C | 1 | ||
| Avalanche energy, single pulse | EAS | 810 | mJ | ID = 50 A, RGS = 25 Ω | 1 | ||
| Reverse diode dv/dt | dv/dt | 6 | kV/µs | ID = 50 A, VDS = 48 V, di/dt = 100 A/µs, Tj,max = 175 °C | 1 | ||
| Gate source voltage | VGS | -20 | 20 | V | 1 | ||
| Power dissipation | Ptot | 300 | W | TC = 25 °C | 1 | ||
| Operating and storage temperature | Tj, Tstg | -55 | 175 | °C | 1 | ||
| Thermal resistance, junction to case | RthJC | 0.5 | K/W | 2 | |||
| Thermal resistance, junction to ambient, SMD version, minimal footprint | RthJA | 62 | K/W | device on PCB, minimal footprint | 2 | ||
| Thermal resistance, junction to ambient, SMD version, 6 cm2 cooling area | RthJA | 40 | K/W | device on PCB, 6 cm2 cooling area | 2 | ||
| Drain-source breakdown voltage | V(BR)DSS | 60 | V | VGS = 0 V, ID = 250 µA | 2 | ||
| Gate threshold voltage | VGS(th) | 2.1 | 3 | 4 | V | VDS = VGS, ID = 250 µA | 2 |
| Zero gate voltage drain current | IDSS | 0.01 | 1 | µA | VDS = 48 V, VGS = 0 V, Tj = 25 °C | 2 | |
| Gate-source leakage current | IGSS | 50 | nA | VGS = VDS = 0 V | 2 | ||
| Drain-source on-state resistance, SMD version (product summary) | RDS(on),max | 15 | mΩ | SMD version | 1 | ||
| Gate resistance | RG | 1.9 | Ω | 2 | |||
| Transconductance | gfs | 74 | 148 | S | /VDS/ > 2/ID/RDS(on)max, ID = 50 A | 2 | |
| Input capacitance | Ciss | 4600 | 6100 | pF | VGS = 0 V, VDS = 30 V, f = 1 MHz | 3 | |
| Output capacitance | Coss | 1500 | 2000 | pF | VGS = 0 V, VDS = 30 V, f = 1 MHz | 3 | |
| Reverse transfer capacitance | Crss | 350 | 525 | pF | VGS = 0 V, VDS = 30 V, f = 1 MHz | 3 | |
| Turn-on delay time | td(on) | 21 | 32 | ns | VDD = 30 V, VGS = 10 V, ID = 30 A, RG = 2.2 Ω | 3 | |
| Rise time | tr | 31 | 47 | ns | VDD = 30 V, VGS = 10 V, ID = 30 A, RG = 2.2 Ω | 3 | |
| Turn-off delay time | td(off) | 59 | 88 | ns | VDD = 30 V, VGS = 10 V, ID = 30 A, RG = 2.2 Ω | 3 | |
| Fall time | tf | 30 | 45 | ns | VDD = 30 V, VGS = 10 V, ID = 30 A, RG = 2.2 Ω | 3 | |
| Gate to source charge | Qgs | 24 | 32 | nC | VDD = 30 V, ID = 50 A, VGS = 0 to 10 V | 3 | |
| Gate charge at threshold | Qg(th) | 9.7 | 13 | nC | VDD = 30 V, ID = 50 A, VGS = 0 to 10 V | 3 | |
| Gate to drain charge | Qgd | 51 | 76 | nC | VDD = 30 V, ID = 50 A, VGS = 0 to 10 V | 3 | |
| Switching charge | Qsw | 65 | 95 | nC | VDD = 30 V, ID = 50 A, VGS = 0 to 10 V | 3 | |
| Gate charge total | Qg | 126 | 167 | nC | VDD = 30 V, ID = 50 A, VGS = 0 to 10 V | 3 | |
| Output charge | Qoss | 47 | 62 | nC | VDD = 30 V, VGS = 0 V | 3 | |
| Diode continuous forward current | IS | 100 | A | 3 | |||
| Diode pulse current | IS,pulse | 400 | A | 3 | |||
| Diode forward voltage | VSD | 0.93 | 1.3 | V | VGS = 0 V, IF = 30 A, Tj = 25 °C | 3 | |
| Reverse recovery time | trr | 60 | 75 | ns | VR = 30 V, IF = IS, diF/dt = 30 A/µs, TC = 25 °C | 3 | |
| Reverse recovery charge | Qrr | 130 | 160 | nC | VR = 30 V, IF = IS, diF/dt = 30 A/µs, TC = 25 °C | 3 | |
| Gate plateau voltage | Vplateau | 5.2 | V | 3 |
CAD (KiCad official)
- Symbol:
JSM50N06D - Footprint:
Package_TO_SOT_SMD:TO-252-2 - 3D model: TO-252 (KiCad packages3D, STEP)
- 3D model files:
jsm50n06d-etched.step/jsm50n06d-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);jsm50n06d.step/jsm50n06d.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: JSMSEMI datasheet (9 pp, sha256
2fa91ca5caf4de02, retrieved 2026-10-18, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).