component
JSM4953
Public Made by Adomby adom
JSMSEMI MOSFETs, SOP-8. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
← Commit history
jsm4953: specified limits as data (metadata.characteristics, 21 rows from the datasheet)
2 files changed
+288−1
README.md+28@@ -26,6 +26,34 @@ JSM4953 from JSMSEMI, in a SOP-8. Pinout and pin descriptions extracted from the | Category | Transistors/Thyristors | | Pins | 8 | +## Electrical characteristics++Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).++| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |+|---|---|---|---|---|---|---|---|+| Drain-Source Voltage | VDS | | | -30 | V | Ta=25℃ (maximum ratings) | 1 |+| Gate-Source Voltage | VGS | -20 | | 20 | V | Ta=25℃ (maximum ratings) | 1 |+| Continuous Drain Current | ID | | | -5.3 | A | Ta=25℃ (maximum ratings) | 1 |+| Pulsed Drain Current | IDM | | | -20 | A | Ta=25℃ (maximum ratings) | 1 |+| Maximum Power Dissipation | PD | | | 2 | W | Ta=25℃ (maximum ratings) | 1 |+| Junction Temperature | TJ | | | 150 | ℃ | | 1 |+| Storage Temperature | Tstg | -55 | | 150 | ℃ | | 1 |+| Thermal Resistance from Junction to Ambient | RθJA | | | 125 | ℃/W | t ≤5s | 1 |+| Thermal Resistance Junction to Ambient (single pulse, figure note) | RθJA | | 135 | | °C/W | Single pulse, TA = 25°C (Figs. 10 and 11 note) | 4 |+| Drain-Source Breakdown Voltage | BVDSS | -30 | | | V | VGS = 0 V, ID = –250 μA | 2 |+| Zero Gate Voltage Drain Current | IDSS | | | -1 | μA | VDS = –24 V, VGS = 0 V | 2 |+| Gate–Body Leakage, Forward | IGSSF | | | -100 | nA | VGS = –20 V, VDS = 0 V | 2 |+| Gate–Body Leakage, Reverse | IGSSR | | | 100 | nA | VGS = 20 V, VDS = 0 V | 2 |+| Gate Threshold Voltage | VGS(th) | -1 | -1.7 | -3 | V | VDS = VGS, ID = –250 μA | 2 |+| Static Drain–Source On–Resistance | RDS(on) | | 54 | 59 | mΩ | VGS = –10 V, ID = –5.3 A | 2 |+| Static Drain–Source On–Resistance | RDS(on) | | 84 | 89 | mΩ | VGS = –4.5 V, ID = –4.2 A | 2 |+| On–State Drain Current | ID(on) | -20 | | | A | VGS = –10 V, VDS = –5.0 V | 2 |+| Forward Transconductance | gFS | 10 | | | S | VDS = –5 V, ID = –5 A | 2 |+| Total Gate Charge | Qg | | 6 | 9 | nC | VDS = –15 V, ID = –5 A, VGS = –5 V | 2 |+| Maximum Continuous Drain–Source Diode Forward Current | IS | | | -1.3 | A | | 2 |+| Drain–Source Diode Forward Voltage | VSD | | -0.8 | -1.2 | V | VGS = 0 V, IS = –2.6 A | 2 |+ ## CAD (KiCad official) - Symbol: `JSM4953`
page.json+260−1@@ -177,6 +177,265 @@ "Package": "SOP-8", "Category": "Transistors/Thyristors", "Pins": "8"+ },+ "characteristics": {+ "version": 1,+ "source": "datasheet",+ "datasheet_sha256": "6d5549f4c16aeb2f",+ "rows": [+ {+ "name": "Drain-Source Voltage",+ "symbol": "VDS",+ "kind": "absolute_maximum",+ "unit": "V",+ "min": null,+ "typ": null,+ "max": -30,+ "conditions": "Ta=25℃ (maximum ratings)",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Gate-Source Voltage",+ "symbol": "VGS",+ "kind": "absolute_maximum",+ "unit": "V",+ "min": -20,+ "typ": null,+ "max": 20,+ "conditions": "Ta=25℃ (maximum ratings)",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Continuous Drain Current",+ "symbol": "ID",+ "kind": "absolute_maximum",+ "unit": "A",+ "min": null,+ "typ": null,+ "max": -5.3,+ "conditions": "Ta=25℃ (maximum ratings)",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Pulsed Drain Current",+ "symbol": "IDM",+ "kind": "absolute_maximum",+ "unit": "A",+ "min": null,+ "typ": null,+ "max": -20,+ "conditions": "Ta=25℃ (maximum ratings)",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Maximum Power Dissipation",+ "symbol": "PD",+ "kind": "absolute_maximum",+ "unit": "W",+ "min": null,+ "typ": null,+ "max": 2,+ "conditions": "Ta=25℃ (maximum ratings)",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Junction Temperature",+ "symbol": "TJ",+ "kind": "absolute_maximum",+ "unit": "℃",+ "min": null,+ "typ": null,+ "max": 150,+ "conditions": "",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Storage Temperature",+ "symbol": "Tstg",+ "kind": "absolute_maximum",+ "unit": "℃",+ "min": -55,+ "typ": null,+ "max": 150,+ "conditions": "",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Thermal Resistance from Junction to Ambient",+ "symbol": "RθJA",+ "kind": "thermal",+ "unit": "℃/W",+ "min": null,+ "typ": null,+ "max": 125,+ "conditions": "t ≤5s",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Thermal Resistance Junction to Ambient (single pulse, figure note)",+ "symbol": "RθJA",+ "kind": "thermal",+ "unit": "°C/W",+ "min": null,+ "typ": 135,+ "max": null,+ "conditions": "Single pulse, TA = 25°C (Figs. 10 and 11 note)",+ "source_page": 4,+ "source": "datasheet"+ },+ {+ "name": "Drain-Source Breakdown Voltage",+ "symbol": "BVDSS",+ "kind": "electrical",+ "unit": "V",+ "min": -30,+ "typ": null,+ "max": null,+ "conditions": "VGS = 0 V, ID = –250 μA",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Zero Gate Voltage Drain Current",+ "symbol": "IDSS",+ "kind": "electrical",+ "unit": "μA",+ "min": null,+ "typ": null,+ "max": -1,+ "conditions": "VDS = –24 V, VGS = 0 V",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Gate–Body Leakage, Forward",+ "symbol": "IGSSF",+ "kind": "electrical",+ "unit": "nA",+ "min": null,+ "typ": null,+ "max": -100,+ "conditions": "VGS = –20 V, VDS = 0 V",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Gate–Body Leakage, Reverse",+ "symbol": "IGSSR",+ "kind": "electrical",+ "unit": "nA",+ "min": null,+ "typ": null,+ "max": 100,+ "conditions": "VGS = 20 V, VDS = 0 V",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Gate Threshold Voltage",+ "symbol": "VGS(th)",+ "kind": "electrical",+ "unit": "V",+ "min": -1,+ "typ": -1.7,+ "max": -3,+ "conditions": "VDS = VGS, ID = –250 μA",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Static Drain–Source On–Resistance",+ "symbol": "RDS(on)",+ "kind": "electrical",+ "unit": "mΩ",+ "min": null,+ "typ": 54,+ "max": 59,+ "conditions": "VGS = –10 V, ID = –5.3 A",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Static Drain–Source On–Resistance",+ "symbol": "RDS(on)",+ "kind": "electrical",+ "unit": "mΩ",+ "min": null,+ "typ": 84,+ "max": 89,+ "conditions": "VGS = –4.5 V, ID = –4.2 A",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "On–State Drain Current",+ "symbol": "ID(on)",+ "kind": "electrical",+ "unit": "A",+ "min": -20,+ "typ": null,+ "max": null,+ "conditions": "VGS = –10 V, VDS = –5.0 V",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Forward Transconductance",+ "symbol": "gFS",+ "kind": "electrical",+ "unit": "S",+ "min": 10,+ "typ": null,+ "max": null,+ "conditions": "VDS = –5 V, ID = –5 A",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Total Gate Charge",+ "symbol": "Qg",+ "kind": "electrical",+ "unit": "nC",+ "min": null,+ "typ": 6,+ "max": 9,+ "conditions": "VDS = –15 V, ID = –5 A, VGS = –5 V",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Maximum Continuous Drain–Source Diode Forward Current",+ "symbol": "IS",+ "kind": "electrical",+ "unit": "A",+ "min": null,+ "typ": null,+ "max": -1.3,+ "conditions": "",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Drain–Source Diode Forward Voltage",+ "symbol": "VSD",+ "kind": "electrical",+ "unit": "V",+ "min": null,+ "typ": -0.8,+ "max": -1.2,+ "conditions": "VGS = 0 V, IS = –2.6 A",+ "source_page": 2,+ "source": "datasheet"+ }+ ] } }, "variants": [],@@ -218,4 +477,4 @@ "visibility": { "public": true }-}+}