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Contents

README

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JSM4953

JSMSEMI · MOSFETs · SOP-8

JSM4953 from JSMSEMI, in a SOP-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 S1 passive Source of channel 1 of the dual P-channel -30V MOSFET; the drain-source diode forward current is limited to -1.3 A maximum continuous.
2 G1 input Gate of channel 1; gate-source voltage is rated at ±20 V maximum.
3 S2 passive Source of channel 2 of the dual P-channel -30V MOSFET; the drain-source diode forward current is limited to -1.3 A maximum continuous.
4 G2 input Gate of channel 2; gate-source voltage is rated at ±20 V maximum.
5 D2 passive Drain of channel 2; drain-source voltage is rated at -30 V with continuous drain current of -5.3 A and pulsed drain current of -20 A.
6 D2 passive Drain of channel 2 (second drain pin, same net); drain-source voltage is rated at -30 V with continuous drain current of -5.3 A and pulsed drain current of -20 A.
7 D1 passive Drain of channel 1; drain-source voltage is rated at -30 V with continuous drain current of -5.3 A and pulsed drain current of -20 A.
8 D1 passive Drain of channel 1 (second drain pin, same net); drain-source voltage is rated at -30 V with continuous drain current of -5.3 A and pulsed drain current of -20 A.

Key specifications

Parameter Value
Manufacturer JSMSEMI
Package SOP-8
Category Transistors/Thyristors
Pins 8

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage VDS -30 V Ta=25℃ (maximum ratings) 1
Gate-Source Voltage VGS -20 20 V Ta=25℃ (maximum ratings) 1
Continuous Drain Current ID -5.3 A Ta=25℃ (maximum ratings) 1
Pulsed Drain Current IDM -20 A Ta=25℃ (maximum ratings) 1
Maximum Power Dissipation PD 2 W Ta=25℃ (maximum ratings) 1
Junction Temperature TJ 150 ℃ 1
Storage Temperature Tstg -55 150 ℃ 1
Thermal Resistance from Junction to Ambient RθJA 125 ℃/W t ≤5s 1
Thermal Resistance Junction to Ambient (single pulse, figure note) RθJA 135 °C/W Single pulse, TA = 25°C (Figs. 10 and 11 note) 4
Drain-Source Breakdown Voltage BVDSS -30 V VGS = 0 V, ID = –250 μA 2
Zero Gate Voltage Drain Current IDSS -1 μA VDS = –24 V, VGS = 0 V 2
Gate–Body Leakage, Forward IGSSF -100 nA VGS = –20 V, VDS = 0 V 2
Gate–Body Leakage, Reverse IGSSR 100 nA VGS = 20 V, VDS = 0 V 2
Gate Threshold Voltage VGS(th) -1 -1.7 -3 V VDS = VGS, ID = –250 μA 2
Static Drain–Source On–Resistance RDS(on) 54 59 mΩ VGS = –10 V, ID = –5.3 A 2
Static Drain–Source On–Resistance RDS(on) 84 89 mΩ VGS = –4.5 V, ID = –4.2 A 2
On–State Drain Current ID(on) -20 A VGS = –10 V, VDS = –5.0 V 2
Forward Transconductance gFS 10 S VDS = –5 V, ID = –5 A 2
Total Gate Charge Qg 6 9 nC VDS = –15 V, ID = –5 A, VGS = –5 V 2
Maximum Continuous Drain–Source Diode Forward Current IS -1.3 A 2
Drain–Source Diode Forward Voltage VSD -0.8 -1.2 V VGS = 0 V, IS = –2.6 A 2

CAD (KiCad official)

  • Symbol: JSM4953
  • Footprint: Package_SO:SOIC-8_3.9x4.9mm_P1.27mm
  • 3D model: SOP-8 (KiCad packages3D, STEP)
  • 3D model files: jsm4953-etched.step / jsm4953-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); jsm4953.step / jsm4953.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: JSMSEMI datasheet (5 pp, sha256 6d5549f4c16aeb2f, retrieved 2026-10-09, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF