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jsm4606: specified limits as data (metadata.characteristics, 28 rows from the datasheet)

Ray ·02e9e7aaa6 ·16d ago ·parent 6eb5af3
2 files changed +379−1
README.md+35
@@ -26,6 +26,41 @@ JSM4606 from JSMSEMI, in a SOP-8. Pinout and pin descriptions extracted from the | Category | Transistors/Thyristors | | Pins | 8 | +## Electrical characteristics++Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).++| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |+|---|---|---|---|---|---|---|---|+| Drain-Source Voltage (N-Channel) | VDS |  |  | 30 | V |  | 1 |+| Drain-Source Voltage (P-Channel) | VDS | -30 |  |  | V |  | 1 |+| Gate-Source Voltage (N-Channel) | VGS | -20 |  | 20 | V |  | 1 |+| Gate-Source Voltage (P-Channel) | VGS | -20 |  | 20 | V |  | 1 |+| Continuous Drain Current (N-Channel) | ID |  |  | 6.9 | A | TA=25℃ | 1 |+| Continuous Drain Current (P-Channel) | ID | -6 |  |  | A | TA=25℃ | 1 |+| Pulsed Drain Current (N-Channel) | IDM |  |  | 28 | A | Note 1: repetitive rating, pulse width limited by maximum junction temperature | 1 |+| Pulsed Drain Current (P-Channel) | IDM | -26 |  |  | A | Note 1: repetitive rating, pulse width limited by maximum junction temperature | 1 |+| Maximum Power Dissipation (N-Channel and P-Channel) | PD |  |  | 2 | W | TA=25℃ | 1 |+| Operating Junction and Storage Temperature Range (N-Channel and P-Channel) | TJ,TSTG | -55 |  | 150 | ℃ |  | 1 |+| Drain-Source Breakdown Voltage (N-Channel) | BVDSS | 30 |  |  | V | VGS=0V ID=250μA | 2 |+| Zero Gate Voltage Drain Current (N-Channel) | IDSS |  |  | 50 | μA | VDS=24V,VGS=0V | 2 |+| Gate-Body Leakage Current (N-Channel) | IGSS | -100 |  | 100 | nA | VGS=±20V,VDS=0V | 2 |+| Gate Threshold Voltage (N-Channel) | VGS(th) | 1.2 | 1.6 | 2.4 | V | VDS=VGS,ID=250μA | 2 |+| Drain-Source On-State Resistance (N-Channel) | RDS(ON) |  | 19 | 21 | mΩ | VGS=10V, ID=6.9A | 2 |+| Drain-Source On-State Resistance (N-Channel) | RDS(ON) |  | 29 | 32 | mΩ | VGS=4.5V, ID=5A | 2 |+| Forward Transconductance (N-Channel) | gFS | 5 |  |  | S | VDS=5V,ID=5.0A | 2 |+| Diode Forward Voltage (N-Channel) | VSD |  | 0.75 | 1 | V | VGS=0V,IS=2A | 2 |+| Drain-Source Breakdown Voltage (P-Channel) | BVDSS | -30 |  |  | V | VGS=0V ID=-250μA | 5 |+| Zero Gate Voltage Drain Current (P-Channel) | IDSS |  |  | -50 | μA | VDS=-24V,VGS=0V | 5 |+| Gate-Body Leakage Current (P-Channel) | IGSS | -100 |  | 100 | nA | VGS=±20V,VDS=0V | 5 |+| Gate Threshold Voltage (P-Channel) | VGS(th) | -1 | -1.3 | -2 | V | VDS=VGS,ID=-250μA | 5 |+| Drain-Source On-State Resistance (P-Channel) | RDS(ON) |  | 42 | 45 | mΩ | VGS=-10V, ID=-6.0A | 5 |+| Drain-Source On-State Resistance (P-Channel) | RDS(ON) |  | 55 | 60 | mΩ | VGS=-4.5V, ID=-5.0A | 5 |+| Forward Transconductance (P-Channel) | gFS | 10 |  |  | S | VDS=-5V,ID=-5.0A | 5 |+| Diode Forward Voltage (P-Channel) | VSD |  | 0.75 | -1 | V | VGS=0V,IS=-2.0A | 5 |+| Thermal Resistance, Junction-to-Ambient (N-Channel) | RθJA |  | 63.5 |  | ℃/W | Note 2: surface mounted on FR4 board, t ≤ 10 sec | 1 |+| Thermal Resistance, Junction-to-Ambient (P-Channel) | RθJA |  | 63.5 |  | ℃/W | Note 2: surface mounted on FR4 board, t ≤ 10 sec | 1 |+ ## CAD (KiCad official)  - Symbol: `JSM4606`
page.json+344−1
@@ -178,6 +178,349 @@       "Package": "SOP-8",       "Category": "Transistors/Thyristors",       "Pins": "8"+    },+    "characteristics": {+      "version": 1,+      "source": "datasheet",+      "datasheet_sha256": "c2766b9c4258b602",+      "rows": [+        {+          "name": "Drain-Source Voltage (N-Channel)",+          "symbol": "VDS",+          "kind": "absolute_maximum",+          "unit": "V",+          "min": null,+          "typ": null,+          "max": 30,+          "conditions": "",+          "source_page": 1,+          "source": "datasheet"+        },+        {+          "name": "Drain-Source Voltage (P-Channel)",+          "symbol": "VDS",+          "kind": "absolute_maximum",+          "unit": "V",+          "min": -30,+          "typ": null,+          "max": null,+          "conditions": "",+          "source_page": 1,+          "source": "datasheet"+        },+        {+          "name": "Gate-Source Voltage (N-Channel)",+          "symbol": "VGS",+          "kind": "absolute_maximum",+          "unit": "V",+          "min": -20,+          "typ": null,+          "max": 20,+          "conditions": "",+          "source_page": 1,+          "source": "datasheet"+        },+        {+          "name": "Gate-Source Voltage (P-Channel)",+          "symbol": "VGS",+          "kind": "absolute_maximum",+          "unit": "V",+          "min": -20,+          "typ": null,+          "max": 20,+          "conditions": "",+          "source_page": 1,+          "source": "datasheet"+        },+        {+          "name": "Continuous Drain Current (N-Channel)",+          "symbol": "ID",+          "kind": "absolute_maximum",+          "unit": "A",+          "min": null,+          "typ": null,+          "max": 6.9,+          "conditions": "TA=25℃",+          "source_page": 1,+          "source": "datasheet"+        },+        {+          "name": "Continuous Drain Current (P-Channel)",+          "symbol": "ID",+          "kind": "absolute_maximum",+          "unit": "A",+          "min": -6,+          "typ": null,+          "max": null,+          "conditions": "TA=25℃",+          "source_page": 1,+          "source": "datasheet"+        },+        {+          "name": "Pulsed Drain Current (N-Channel)",+          "symbol": "IDM",+          "kind": "absolute_maximum",+          "unit": "A",+          "min": null,+          "typ": null,+          "max": 28,+          "conditions": "Note 1: repetitive rating, pulse width limited by maximum junction temperature",+          "source_page": 1,+          "source": "datasheet"+        },+        {+          "name": "Pulsed Drain Current (P-Channel)",+          "symbol": "IDM",+          "kind": "absolute_maximum",+          "unit": "A",+          "min": -26,+          "typ": null,+          "max": null,+          "conditions": "Note 1: repetitive rating, pulse width limited by maximum junction temperature",+          "source_page": 1,+          "source": "datasheet"+        },+        {+          "name": "Maximum Power Dissipation (N-Channel and P-Channel)",+          "symbol": "PD",+          "kind": "absolute_maximum",+          "unit": "W",+          "min": null,+          "typ": null,+          "max": 2,+          "conditions": "TA=25℃",+          "source_page": 1,+          "source": "datasheet"+        },+        {+          "name": "Operating Junction and Storage Temperature Range (N-Channel and P-Channel)",+          "symbol": "TJ,TSTG",+          "kind": "absolute_maximum",+          "unit": "℃",+          "min": -55,+          "typ": null,+          "max": 150,+          "conditions": "",+          "source_page": 1,+          "source": "datasheet"+        },+        {+          "name": "Drain-Source Breakdown Voltage (N-Channel)",+          "symbol": "BVDSS",+          "kind": "electrical",+          "unit": "V",+          "min": 30,+          "typ": null,+          "max": null,+          "conditions": "VGS=0V ID=250μA",+          "source_page": 2,+          "source": "datasheet"+        },+        {+          "name": "Zero Gate Voltage Drain Current (N-Channel)",+          "symbol": "IDSS",+          "kind": "electrical",+          "unit": "μA",+          "min": null,+          "typ": null,+          "max": 50,+          "conditions": "VDS=24V,VGS=0V",+          "source_page": 2,+          "source": "datasheet"+        },+        {+          "name": "Gate-Body Leakage Current (N-Channel)",+          "symbol": "IGSS",+          "kind": "electrical",+          "unit": "nA",+          "min": -100,+          "typ": null,+          "max": 100,+          "conditions": "VGS=±20V,VDS=0V",+          "source_page": 2,+          "source": "datasheet"+        },+        {+          "name": "Gate Threshold Voltage (N-Channel)",+          "symbol": "VGS(th)",+          "kind": "electrical",+          "unit": "V",+          "min": 1.2,+          "typ": 1.6,+          "max": 2.4,+          "conditions": "VDS=VGS,ID=250μA",+          "source_page": 2,+          "source": "datasheet"+        },+        {+          "name": "Drain-Source On-State Resistance (N-Channel)",+          "symbol": "RDS(ON)",+          "kind": "electrical",+          "unit": "mΩ",+          "min": null,+          "typ": 19,+          "max": 21,+          "conditions": "VGS=10V, ID=6.9A",+          "source_page": 2,+          "source": "datasheet"+        },+        {+          "name": "Drain-Source On-State Resistance (N-Channel)",+          "symbol": "RDS(ON)",+          "kind": "electrical",+          "unit": "mΩ",+          "min": null,+          "typ": 29,+          "max": 32,+          "conditions": "VGS=4.5V, ID=5A",+          "source_page": 2,+          "source": "datasheet"+        },+        {+          "name": "Forward Transconductance (N-Channel)",+          "symbol": "gFS",+          "kind": "electrical",+          "unit": "S",+          "min": 5,+          "typ": null,+          "max": null,+          "conditions": "VDS=5V,ID=5.0A",+          "source_page": 2,+          "source": "datasheet"+        },+        {+          "name": "Diode Forward Voltage (N-Channel)",+          "symbol": "VSD",+          "kind": "electrical",+          "unit": "V",+          "min": null,+          "typ": 0.75,+          "max": 1,+          "conditions": "VGS=0V,IS=2A",+          "source_page": 2,+          "source": "datasheet"+        },+        {+          "name": "Drain-Source Breakdown Voltage (P-Channel)",+          "symbol": "BVDSS",+          "kind": "electrical",+          "unit": "V",+          "min": -30,+          "typ": null,+          "max": null,+          "conditions": "VGS=0V ID=-250μA",+          "source_page": 5,+          "source": "datasheet"+        },+        {+          "name": "Zero Gate Voltage Drain Current (P-Channel)",+          "symbol": "IDSS",+          "kind": "electrical",+          "unit": "μA",+          "min": null,+          "typ": null,+          "max": -50,+          "conditions": "VDS=-24V,VGS=0V",+          "source_page": 5,+          "source": "datasheet"+        },+        {+          "name": "Gate-Body Leakage Current (P-Channel)",+          "symbol": "IGSS",+          "kind": "electrical",+          "unit": "nA",+          "min": -100,+          "typ": null,+          "max": 100,+          "conditions": "VGS=±20V,VDS=0V",+          "source_page": 5,+          "source": "datasheet"+        },+        {+          "name": "Gate Threshold Voltage (P-Channel)",+          "symbol": "VGS(th)",+          "kind": "electrical",+          "unit": "V",+          "min": -1,+          "typ": -1.3,+          "max": -2,+          "conditions": "VDS=VGS,ID=-250μA",+          "source_page": 5,+          "source": "datasheet"+        },+        {+          "name": "Drain-Source On-State Resistance (P-Channel)",+          "symbol": "RDS(ON)",+          "kind": "electrical",+          "unit": "mΩ",+          "min": null,+          "typ": 42,+          "max": 45,+          "conditions": "VGS=-10V, ID=-6.0A",+          "source_page": 5,+          "source": "datasheet"+        },+        {+          "name": "Drain-Source On-State Resistance (P-Channel)",+          "symbol": "RDS(ON)",+          "kind": "electrical",+          "unit": "mΩ",+          "min": null,+          "typ": 55,+          "max": 60,+          "conditions": "VGS=-4.5V, ID=-5.0A",+          "source_page": 5,+          "source": "datasheet"+        },+        {+          "name": "Forward Transconductance (P-Channel)",+          "symbol": "gFS",+          "kind": "electrical",+          "unit": "S",+          "min": 10,+          "typ": null,+          "max": null,+          "conditions": "VDS=-5V,ID=-5.0A",+          "source_page": 5,+          "source": "datasheet"+        },+        {+          "name": "Diode Forward Voltage (P-Channel)",+          "symbol": "VSD",+          "kind": "electrical",+          "unit": "V",+          "min": null,+          "typ": 0.75,+          "max": -1,+          "conditions": "VGS=0V,IS=-2.0A",+          "source_page": 5,+          "source": "datasheet"+        },+        {+          "name": "Thermal Resistance, Junction-to-Ambient (N-Channel)",+          "symbol": "RθJA",+          "kind": "thermal",+          "unit": "℃/W",+          "min": null,+          "typ": 63.5,+          "max": null,+          "conditions": "Note 2: surface mounted on FR4 board, t ≤ 10 sec",+          "source_page": 1,+          "source": "datasheet"+        },+        {+          "name": "Thermal Resistance, Junction-to-Ambient (P-Channel)",+          "symbol": "RθJA",+          "kind": "thermal",+          "unit": "℃/W",+          "min": null,+          "typ": 63.5,+          "max": null,+          "conditions": "Note 2: surface mounted on FR4 board, t ≤ 10 sec",+          "source_page": 1,+          "source": "datasheet"+        }+      ]     }   },   "variants": [],@@ -219,4 +562,4 @@   "visibility": {     "public": true   }-}\ No newline at end of file+}