component
JSM4606
Public Made by Adomby adom
JSMSEMI MOSFETs, SOP-8. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownJSM4606
JSMSEMI · MOSFETs · SOP-8
JSM4606 from JSMSEMI, in a SOP-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | S2 | passive | Source of the N-channel MOSFET (30V, 6.9A, RDS(ON) < 21mΩ at VGS=10V). |
| 2 | G2 | input | Gate of the N-channel MOSFET, with VGS rated ±20V and threshold 1.2V to 2.4V. |
| 3 | S1 | passive | Source of the P-channel MOSFET (-30V, -6.0A, RDS(ON) < 45mΩ at VGS=-10V). |
| 4 | G1 | input | Gate of the P-channel MOSFET, with VGS rated ±20V and threshold -1.0V to -2.0V. |
| 5 | D1 | passive | Drain of the P-channel MOSFET, rated VDS -30V and ID -6.0A, internally common with pin 6. |
| 6 | D1 | passive | Drain of the P-channel MOSFET, rated VDS -30V and ID -6.0A, internally common with pin 5. |
| 7 | D2 | passive | Drain of the N-channel MOSFET, rated VDS 30V and ID 6.9A, internally common with pin 8. |
| 8 | D2 | passive | Drain of the N-channel MOSFET, rated VDS 30V and ID 6.9A, internally common with pin 7. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | JSMSEMI |
| Package | SOP-8 |
| Category | Transistors/Thyristors |
| Pins | 8 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage (N-Channel) | VDS | 30 | V | 1 | |||
| Drain-Source Voltage (P-Channel) | VDS | -30 | V | 1 | |||
| Gate-Source Voltage (N-Channel) | VGS | -20 | 20 | V | 1 | ||
| Gate-Source Voltage (P-Channel) | VGS | -20 | 20 | V | 1 | ||
| Continuous Drain Current (N-Channel) | ID | 6.9 | A | TA=25℃ | 1 | ||
| Continuous Drain Current (P-Channel) | ID | -6 | A | TA=25℃ | 1 | ||
| Pulsed Drain Current (N-Channel) | IDM | 28 | A | Note 1: repetitive rating, pulse width limited by maximum junction temperature | 1 | ||
| Pulsed Drain Current (P-Channel) | IDM | -26 | A | Note 1: repetitive rating, pulse width limited by maximum junction temperature | 1 | ||
| Maximum Power Dissipation (N-Channel and P-Channel) | PD | 2 | W | TA=25℃ | 1 | ||
| Operating Junction and Storage Temperature Range (N-Channel and P-Channel) | TJ,TSTG | -55 | 150 | ℃ | 1 | ||
| Drain-Source Breakdown Voltage (N-Channel) | BVDSS | 30 | V | VGS=0V ID=250μA | 2 | ||
| Zero Gate Voltage Drain Current (N-Channel) | IDSS | 50 | μA | VDS=24V,VGS=0V | 2 | ||
| Gate-Body Leakage Current (N-Channel) | IGSS | -100 | 100 | nA | VGS=±20V,VDS=0V | 2 | |
| Gate Threshold Voltage (N-Channel) | VGS(th) | 1.2 | 1.6 | 2.4 | V | VDS=VGS,ID=250μA | 2 |
| Drain-Source On-State Resistance (N-Channel) | RDS(ON) | 19 | 21 | mΩ | VGS=10V, ID=6.9A | 2 | |
| Drain-Source On-State Resistance (N-Channel) | RDS(ON) | 29 | 32 | mΩ | VGS=4.5V, ID=5A | 2 | |
| Forward Transconductance (N-Channel) | gFS | 5 | S | VDS=5V,ID=5.0A | 2 | ||
| Diode Forward Voltage (N-Channel) | VSD | 0.75 | 1 | V | VGS=0V,IS=2A | 2 | |
| Drain-Source Breakdown Voltage (P-Channel) | BVDSS | -30 | V | VGS=0V ID=-250μA | 5 | ||
| Zero Gate Voltage Drain Current (P-Channel) | IDSS | -50 | μA | VDS=-24V,VGS=0V | 5 | ||
| Gate-Body Leakage Current (P-Channel) | IGSS | -100 | 100 | nA | VGS=±20V,VDS=0V | 5 | |
| Gate Threshold Voltage (P-Channel) | VGS(th) | -1 | -1.3 | -2 | V | VDS=VGS,ID=-250μA | 5 |
| Drain-Source On-State Resistance (P-Channel) | RDS(ON) | 42 | 45 | mΩ | VGS=-10V, ID=-6.0A | 5 | |
| Drain-Source On-State Resistance (P-Channel) | RDS(ON) | 55 | 60 | mΩ | VGS=-4.5V, ID=-5.0A | 5 | |
| Forward Transconductance (P-Channel) | gFS | 10 | S | VDS=-5V,ID=-5.0A | 5 | ||
| Diode Forward Voltage (P-Channel) | VSD | 0.75 | -1 | V | VGS=0V,IS=-2.0A | 5 | |
| Thermal Resistance, Junction-to-Ambient (N-Channel) | RθJA | 63.5 | ℃/W | Note 2: surface mounted on FR4 board, t ≤ 10 sec | 1 | ||
| Thermal Resistance, Junction-to-Ambient (P-Channel) | RθJA | 63.5 | ℃/W | Note 2: surface mounted on FR4 board, t ≤ 10 sec | 1 |
CAD (KiCad official)
- Symbol:
JSM4606 - Footprint:
Package_SO:SOIC-8_3.9x4.9mm_P1.27mm - 3D model: SOP-8 (KiCad packages3D, STEP)
- 3D model files:
jsm4606-etched.step/jsm4606-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);jsm4606.step/jsm4606.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: JSMSEMI datasheet (8 pp, sha256
c2766b9c4258b602, retrieved 2026-10-09, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).