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Ray jsm4407: specified limits as data (metadata.characteristics, 15 rows from the datasheet) 0eec0e7 16d ago

JSM4407

JSMSEMI · MOSFETs · SOP-8

JSM4407 from JSMSEMI, in a SOP-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 S passive Source terminal of the P-channel MOSFET, rated for VDS = -30 V with VGS limited to ±20 V.
2 S passive Source terminal of the P-channel MOSFET, rated for VDS = -30 V with VGS limited to ±20 V.
3 S passive Source terminal of the P-channel MOSFET, rated for VDS = -30 V with VGS limited to ±20 V.
4 G input Gate control input of the P-channel MOSFET; VGS is limited to ±20 V and RDS(on) is specified at VGS = -4.5 V and -10 V.
5 D passive Drain terminal of the P-channel MOSFET; continuous drain current is -10 A at TA = 25 ℃ and pulsed drain current is -60 A.
6 D passive Drain terminal of the P-channel MOSFET; continuous drain current is -10 A at TA = 25 ℃ and pulsed drain current is -60 A.
7 D passive Drain terminal of the P-channel MOSFET; continuous drain current is -10 A at TA = 25 ℃ and pulsed drain current is -60 A.
8 D passive Drain terminal of the P-channel MOSFET; continuous drain current is -10 A at TA = 25 ℃ and pulsed drain current is -60 A.

Key specifications

Parameter Value
Manufacturer JSMSEMI
Package SOP-8
Category Transistors/Thyristors
Pins 8

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage VDS -30 V 1
Gate-Source Voltage VGS -20 20 V 1
Continuous Drain Current ID -10 A TJ=150℃, TA=25℃ 1
Drain Current-Pulsed IDM -60 A Note 1 1
Maximum Power Dissipation PD 2.1 W 1
Operating Junction and Storage Temperature Range TJ,TST -55 ℃ 1
Thermal Resistance, Junction-to-Ambient RθJA 50 ℃/W Note 2: surface mounted on FR4 board, t ≤ 10 sec 1
Drain-Source Breakdown Voltage BVDSS -30 V VGS=0V, ID=-250μA 2
Zero Gate Voltage Drain Current IDSS -1 μA VDS=-30V, VGS=0V 2
Gate-Body Leakage Current IGSS -100 100 nA VGS=±20V, VDS=0V 2
Gate Threshold Voltage VGS(th) -1 -3 V VDS=VGS, ID=-250μA 2
Drain-Source On-State Resistance RDS(ON) 9 14 mΩ VGS=-10V, ID=-10.0A 2
Drain-Source On-State Resistance RDS(ON) 14 20 mΩ VGS=-4.5V, ID=-6.0A 2
Forward Transconductance gFS 20 S VDS=-15V, ID=-5.0A 2
Diode Forward Voltage VSD -1.2 V VGS=0V, IS=-10A 2

CAD (KiCad official)

  • Symbol: JSM4407
  • Footprint: Package_SO:SOIC-8_3.9x4.9mm_P1.27mm
  • 3D model: SOP-8 (KiCad packages3D, STEP)
  • 3D model files: jsm4407-etched.step / jsm4407-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); jsm4407.step / jsm4407.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: JSMSEMI datasheet (6 pp, sha256 aaccfbc40a812c90, retrieved 2026-10-09, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF