component
JSM100N03D
Public Made by Adomby adom
JSMSEMI MOSFETs, TO-252. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
Generated by kicad-footprint-generator · KiCad file format 20260206
| Name | Last updated |
|---|---|
| docs | 23d ago |
| viewers | 23d ago |
| jsm100n03d-etched.glb | 23d ago |
| jsm100n03d-etched.step | 23d ago |
| jsm100n03d-hero.glb | 23d ago |
| jsm100n03d-hero.overlay.json | 23d ago |
| jsm100n03d.glb | 23d ago |
| jsm100n03d.kicad_mod | 23d ago |
| jsm100n03d.kicad_sym | 23d ago |
| jsm100n03d.lbr | 23d ago |
| jsm100n03d.step | 23d ago |
| package.json | 23d ago |
| page.json | 23d ago |
| README.md | 23d ago |
JSM100N03D
JSMSEMI · MOSFETs · TO-252
JSM100N03D from JSMSEMI, in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate; controls the channel, with VGS limited to ±20V and a threshold VGS(th) of 1V min to 3V max at ID=250μA. |
| 2 | D | passive | Drain; continuous ID up to 100A (70A at TC=100℃), pulsed IDM 400A, with VDS rated 30V. |
| 3 | S | passive | Source; connects to the body diode anode, with continuous diode forward current IS up to 100A. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | JSMSEMI |
| Package | TO-252 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS | 30 | V | 1 | |||
| Gate-Source Voltage | VGS | -20 | 20 | V | 1 | ||
| Drain Current-Continuous | ID | 100 | A | 1 | |||
| Drain Current-Continuous | ID (100℃) | 70 | A | TC=100℃ | 1 | ||
| Pulsed Drain Current | IDM | 400 | A | 1 | |||
| Maximum Power Dissipation | PD | 110 | W | 1 | |||
| Single pulse avalanche energy | EAS | 350 | mJ | Note 5: Tj=25℃,VDD=15V,VG=10V,L=0.5mH,Rg=25 | 1 | ||
| Operating Junction and Storage Temperature Range | TJ,TSTG | -55 | 175 | ℃ | 1 | ||
| Thermal Resistance, Junction-to-Case | RθJC | 1.36 | ℃/W | Note 2: Surface Mounted on FR4 Board, t ≤ 10 sec | 1 | ||
| Drain-Source Breakdown Voltage | BVDSS | 30 | V | VGS=0V ID=250μA | 2 | ||
| Zero Gate Voltage Drain Current | IDSS | 1 | μA | VDS=30V,VGS=0V | 2 | ||
| Gate-Body Leakage Current | IGSS | -100 | 100 | nA | VGS=±20V,VDS=0V | 2 | |
| Gate Threshold Voltage | VGS(th) | 1 | 1.6 | 3 | V | VDS=VGS,ID=250μA | 2 |
| Drain-Source On-State Resistance | RDS(ON) | 4 | 5.5 | mΩ | VGS=10V, ID=20A | 2 | |
| Forward Transconductance | gFS | 50 | S | VDS=10V,ID=20A | 2 | ||
| Diode Forward Voltage | VSD | 1.2 | V | VGS=0V,IS=20A | 2 | ||
| Diode Forward Current | IS | 100 | A | 2 |
CAD (KiCad official)
- Symbol:
JSM100N03D - Footprint:
Package_TO_SOT_SMD:TO-252-2 - 3D model: TO-252 (KiCad packages3D, STEP)
- 3D model files:
jsm100n03d-etched.step/jsm100n03d-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);jsm100n03d.step/jsm100n03d.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: JSMSEMI datasheet (6 pp, sha256
5bca6f88e03ccac5, retrieved 2026-10-18, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).