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JMTP160P03D

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Jiangsu JieJie Microelectronics MOSFETs, SOP-8. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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JMTP160P03D

Jiangsu JieJie Microelectronics · MOSFETs · SOP-8

JMTP160P03D from Jiangsu JieJie Microelectronics, in a SOP-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 S2 passive Source of P-channel MOSFET 2; VDSS -30V, ID -11A per device.
2 G2 input Gate of P-channel MOSFET 2; VGSS maximum ±20V, threshold -1.0 to -2.5V.
3 S1 passive Source of P-channel MOSFET 1; VDSS -30V, ID -11A per device.
4 G1 input Gate of P-channel MOSFET 1; VGSS maximum ±20V, threshold -1.0 to -2.5V.
5 D1 passive Drain of P-channel MOSFET 1; continuous current -11A at TA=25℃, pulsed -44A, RDS(on) <17mΩ at VGS=-10V.
6 D1 passive Drain of P-channel MOSFET 1, tied to pin 5; continuous current -11A at TA=25℃, pulsed -44A.
7 D2 passive Drain of P-channel MOSFET 2; continuous current -11A at TA=25℃, pulsed -44A, RDS(on) <17mΩ at VGS=-10V.
8 D2 passive Drain of P-channel MOSFET 2, tied to pin 7; continuous current -11A at TA=25℃, pulsed -44A.

Key specifications

Parameter Value
Manufacturer Jiangsu JieJie Microelectronics
Package SOP-8
Category Transistors/Thyristors
Pins 8

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage VDSS -30 V 1
Gate-Source Voltage VGSS -20 20 V 1
Continuous Drain Current ID -11 A TA = 25℃ 1
Continuous Drain Current ID -7 A TA = 100℃ 1
Pulsed Drain Current IDM -44 A note1: repetitive rating, pulse width limited by maximum junction temperature 1
Single Pulsed Avalanche Energy EAS 68 mJ note2: TJ=25℃, VDD= -15V, VG= -10V, RG=25Ω, L=0.5mH, IAS= -16.5A 1
Power Dissipation PD 3.6 W TA = 25℃ 1
Thermal Resistance, Junction to Ambient RθJA 34.7 ℃/W 1
Operating and Storage Temperature Range TJ, TSTG -55 150 ℃ 1
Drain-Source Breakdown Voltage V(BR)DSS -30 V VGS=0V, ID= -250μA 2
Zero Gate Voltage Drain Current IDSS -1 μA VDS= -30V, VGS=0V 2
Gate to Body Leakage Current IGSS -100 100 nA VDS=0V, VGS= ±20V 2
Gate Threshold Voltage VGS(th) -1 -1.6 -2.5 V VDS=VGS, ID= -250μA 2
Static Drain-Source on-Resistance RDS(on) 12.7 17 mΩ VGS= -10V, ID= -10A 2
Static Drain-Source on-Resistance RDS(on) 19 27 mΩ VGS= -4.5V, ID= -5A 2
Maximum Continuous Drain to Source Diode Forward Current IS -11 A 2
Maximum Pulsed Drain to Source Diode Forward Current ISM -44 A 2
Drain to Source Diode Forward Voltage VSD -0.8 -1.2 V VGS=0V, IS= -11A 2

CAD (KiCad official)

  • Symbol: JMTP160P03D
  • Footprint: Package_SO:SOIC-8_3.9x4.9mm_P1.27mm
  • 3D model: SOP-8 (KiCad packages3D, STEP)
  • 3D model files: jmtp160p03d-etched.step / jmtp160p03d-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); jmtp160p03d.step / jmtp160p03d.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Jiangsu JieJie Microelectronics datasheet (6 pp, sha256 bfa7837e216e3b90, retrieved 2026-10-18, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF