component
JMTP130P04A
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Jiangsu JieJie Microelectronics MOSFETs, SOIC-8. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownJMTP130P04A
Jiangsu JieJie Microelectronics · MOSFETs · SOIC-8
JMTP130P04A from Jiangsu JieJie Microelectronics, in a SOIC-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | S | passive | Source of the P-channel MOSFET, tied to pins 2 and 3; drain-source voltage rating is -40 V. |
| 2 | S | passive | Source of the P-channel MOSFET, tied to pins 1 and 3; drain-source voltage rating is -40 V. |
| 3 | S | passive | Source of the P-channel MOSFET, tied to pins 1 and 2; drain-source voltage rating is -40 V. |
| 4 | G | input | Gate of the P-channel MOSFET with a gate-source voltage rating of ±20 V and threshold of -1.0 to -2.5 V. |
| 5 | D | passive | Drain of the P-channel MOSFET, tied to pins 6, 7 and 8; continuous drain current is -12 A at TA=25℃. |
| 6 | D | passive | Drain of the P-channel MOSFET, tied to pins 5, 7 and 8; continuous drain current is -12 A at TA=25℃. |
| 7 | D | passive | Drain of the P-channel MOSFET, tied to pins 5, 6 and 8; continuous drain current is -12 A at TA=25℃. |
| 8 | D | passive | Drain of the P-channel MOSFET, tied to pins 5, 6 and 7; continuous drain current is -12 A at TA=25℃. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Jiangsu JieJie Microelectronics |
| Package | SOIC-8 |
| Category | Transistors/Thyristors |
| Pins | 8 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDSS | -40 | V | 1 | |||
| Gate-Source Voltage | VGSS | -20 | 20 | V | 1 | ||
| Continuous Drain Current | ID | -12 | A | TA = 25℃ | 1 | ||
| Continuous Drain Current | ID | -7.8 | A | TA = 100℃ | 1 | ||
| Pulsed Drain Current | IDM | -48 | A | note1 | 1 | ||
| Power Dissipation | PD | 3.5 | W | TA = 25℃ | 1 | ||
| Thermal Resistance, Junction to Ambient | RθJA | 36 | ℃/W | 1 | |||
| Operating and Storage Temperature Range | TJ, TSTG | -55 | 150 | ℃ | 1 | ||
| Drain-Source Breakdown Voltage | V(BR)DSS | -40 | V | VGS=0V, ID= -250μA | 2 | ||
| Zero Gate Voltage Drain Current | IDSS | -1 | μA | VDS= -40V, VGS=0V | 2 | ||
| Gate to Body Leakage Current | IGSS | -100 | 100 | nA | VDS=0V, VGS= ±20V | 2 | |
| Gate Threshold Voltage | VGS(th) | -1 | -1.7 | -2.5 | V | VDS=VGS, ID= -250μA | 2 |
| Static Drain-Source on-Resistance | RDS(on) | 11 | 14.3 | mΩ | VGS= -10V, ID= -12A | 2 | |
| Static Drain-Source on-Resistance | RDS(on) | 15.5 | 22 | mΩ | VGS= -4.5V, ID= -10A | 2 | |
| Drain to Source Diode Forward Voltage | VSD | -0.8 | -1.2 | V | VGS=0V, IS= -12A | 2 | |
| Maximum Continuous Drain to Source Diode Forward Current | IS | -12 | A | 2 | |||
| Maximum Pulsed Drain to Source Diode Forward Current | ISM | -48 | A | 2 |
CAD (KiCad official)
- Symbol:
JMTP130P04A - Footprint:
Package_SO:SOIC-8_3.9x4.9mm_P1.27mm - 3D model: SOIC-8 (KiCad packages3D, STEP)
- 3D model files:
jmtp130p04a-etched.step/jmtp130p04a-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);jmtp130p04a.step/jmtp130p04a.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Jiangsu JieJie Microelectronics datasheet (6 pp, sha256
c958fe73cfdf735b, retrieved 2026-10-19, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).