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Contents

README

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JMTM8205A

Jiangsu JieJie Microelectronics · MOSFETs · SOT-23-6L

JMTM8205A from Jiangsu JieJie Microelectronics, in a SOT-23-6L. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 S1 passive Source of MOSFET 1 (N-channel, VDSS 20 V, ID 5 A at TA=25℃).
2 D passive Common drain of both MOSFETs (internally connected to pin 5), VDSS 20 V.
3 S2 passive Source of MOSFET 2 (N-channel, VDSS 20 V, ID 5 A at TA=25℃).
4 G2 input Gate of MOSFET 2, VGSS ±12 V max with threshold 0.5 to 1.2 V.
5 D passive Common drain of both MOSFETs (internally connected to pin 2), VDSS 20 V.
6 G1 input Gate of MOSFET 1, VGSS ±12 V max with threshold 0.5 to 1.2 V.

Key specifications

Parameter Value
Manufacturer Jiangsu JieJie Microelectronics
Package SOT-23-6L
Category Triode/MOS Tube/Transistor
Pins 6

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage VDSS 20 V TA=25℃ 1
Gate-Source Voltage VGSS -12 12 V TA=25℃ 1
Continuous Drain Current ID 5 A TA = 25℃ 1
Continuous Drain Current ID 3.2 A TA = 100℃ 1
Pulsed Drain Current IDM 20 A note1 1
Power Dissipation PD 1.5 W TA = 25℃ 1
Thermal Resistance, Junction to Ambient RθJA 83.3 ℃/W 1
Operating and Storage Temperature Range TJ, TSTG -55 150 ℃ 1
Drain-Source Breakdown Voltage V(BR)DSS 20 V VGS=0V, ID=250μA 2
Zero Gate Voltage Drain Current IDSS 1 μA VDS=20V, VGS=0V 2
Gate to Body Leakage Current IGSS -100 100 nA VDS=0V, VGS=±12V 2
Gate Threshold Voltage VGS(th) 0.5 0.66 1.2 V VDS=VGS, ID=250μA 2
Static Drain-Source on-Resistance RDS(on) 18 26 mΩ VGS=4.5V, ID=5A 2
Static Drain-Source on-Resistance RDS(on) 23 34 mΩ VGS=2.5V, ID=3A 2
Maximum Continuous Drain to Source Diode Forward Current IS 6.5 A 2
Maximum Pulsed Drain to Source Diode Forward Current ISM 26 A 2
Drain to Source Diode Forward Voltage VSD 1.2 V VGS=0V, IS=5A 2
Input Capacitance Ciss 800 pF VDS=10V, VGS=0V, f=1.0MHz 2
Output Capacitance Coss 155 pF VDS=10V, VGS=0V, f=1.0MHz 2
Reverse Transfer Capacitance Crss 125 pF VDS=10V, VGS=0V, f=1.0MHz 2
Total Gate Charge Qg 11 nC VDS=10V, ID=3A, VGS=4.5V 2
Gate-Source Charge Qgs 2.3 nC VDS=10V, ID=3A, VGS=4.5V 2
Gate-Drain (Miller) Charge Qgd 2.5 nC VDS=10V, ID=3A, VGS=4.5V 2
Turn-on Delay Time td(on) 18 ns VDS=10V, ID=3A, RGEN=3Ω, VGS=4.5V 2
Turn-on Rise Time tr 5 ns VDS=10V, ID=3A, RGEN=3Ω, VGS=4.5V 2
Turn-off Delay Time td(off) 43 ns VDS=10V, ID=3A, RGEN=3Ω, VGS=4.5V 2
Turn-off Fall Time tf 20 ns VDS=10V, ID=3A, RGEN=3Ω, VGS=4.5V 2

CAD (KiCad official)

  • Symbol: JMTM8205A
  • Footprint: Package_TO_SOT_SMD:SOT-23-6
  • 3D model: SOT-23-6L (KiCad packages3D, STEP)
  • 3D model files: jmtm8205a-etched.step / jmtm8205a-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); jmtm8205a.step / jmtm8205a.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Jiangsu JieJie Microelectronics datasheet (6 pp, sha256 4e553dfa300ada38, retrieved 2026-10-22, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF