component
JMTL850P04A
Public Made by Adomby adom
Jiangsu JieJie Microelectronics MOSFETs, SOT-23. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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jmtl850p04a: specified limits as data (metadata.characteristics, 17 rows from the datasheet)
2 files changed
+236−1
README.md+24@@ -21,6 +21,30 @@ JMTL850P04A from Jiangsu JieJie Microelectronics, in a SOT-23. Pinout and pin de | Category | Transistors/Thyristors | | Pins | 3 | +## Electrical characteristics++Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).++| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |+|---|---|---|---|---|---|---|---|+| Drain-Source Voltage | VDSS | | | -40 | V | | 1 |+| Gate-Source Voltage | VGSS | -20 | | 20 | V | | 1 |+| Continuous Drain Current | ID | | | -5 | A | TA = 25℃ | 1 |+| Continuous Drain Current | ID | | | -3.3 | A | TA = 100℃ | 1 |+| Pulsed Drain Current | IDM | | | -20 | A | | 1 |+| Power Dissipation | PD | | | 3.8 | W | TA = 25℃ | 1 |+| Thermal Resistance, Junction to Ambient | RθJA | | | 32.9 | ℃/W | | 1 |+| Operating and Storage Temperature Range | TJ, TSTG | -55 | | 150 | ℃ | | 1 |+| Drain-Source Breakdown Voltage | V(BR)DSS | -40 | | | V | VGS=0V, ID= -250μA | 2 |+| Zero Gate Voltage Drain Current | IDSS | | | -1 | μA | VDS= -40V, VGS=0V | 2 |+| Gate to Body Leakage Current | IGSS | -100 | | 100 | nA | VDS=0V, VGS= ±20V | 2 |+| Gate Threshold Voltage | VGS(th) | -1 | -1.6 | -2.5 | V | VDS=VGS, ID= -250μA | 2 |+| Static Drain-Source on-Resistance | RDS(on) | | 70 | 90 | mΩ | VGS= -10V, ID= -3A | 2 |+| Static Drain-Source on-Resistance | RDS(on) | | 90 | 125 | mΩ | VGS= -4.5V, ID= -2A | 2 |+| Maximum Continuous Drain to Source Diode Forward Current | IS | | | -5 | A | | 2 |+| Maximum Pulsed Drain to Source Diode Forward Current | ISM | | | -20 | A | | 2 |+| Drain to Source Diode Forward Voltage | VSD | | -0.8 | -1.2 | V | VGS=0V, IS= -5A | 2 |+ ## CAD (KiCad official) - Symbol: `JMTL850P04A`
page.json+212−1@@ -148,6 +148,217 @@ "Package": "SOT-23", "Category": "Transistors/Thyristors", "Pins": "3"+ },+ "characteristics": {+ "version": 1,+ "source": "datasheet",+ "datasheet_sha256": "0da4613b2e49123a",+ "rows": [+ {+ "name": "Drain-Source Voltage",+ "symbol": "VDSS",+ "kind": "absolute_maximum",+ "unit": "V",+ "min": null,+ "typ": null,+ "max": -40,+ "conditions": "",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Gate-Source Voltage",+ "symbol": "VGSS",+ "kind": "absolute_maximum",+ "unit": "V",+ "min": -20,+ "typ": null,+ "max": 20,+ "conditions": "",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Continuous Drain Current",+ "symbol": "ID",+ "kind": "absolute_maximum",+ "unit": "A",+ "min": null,+ "typ": null,+ "max": -5,+ "conditions": "TA = 25℃",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Continuous Drain Current",+ "symbol": "ID",+ "kind": "absolute_maximum",+ "unit": "A",+ "min": null,+ "typ": null,+ "max": -3.3,+ "conditions": "TA = 100℃",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Pulsed Drain Current",+ "symbol": "IDM",+ "kind": "absolute_maximum",+ "unit": "A",+ "min": null,+ "typ": null,+ "max": -20,+ "conditions": "",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Power Dissipation",+ "symbol": "PD",+ "kind": "absolute_maximum",+ "unit": "W",+ "min": null,+ "typ": null,+ "max": 3.8,+ "conditions": "TA = 25℃",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Thermal Resistance, Junction to Ambient",+ "symbol": "RθJA",+ "kind": "thermal",+ "unit": "℃/W",+ "min": null,+ "typ": null,+ "max": 32.9,+ "conditions": "",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Operating and Storage Temperature Range",+ "symbol": "TJ, TSTG",+ "kind": "absolute_maximum",+ "unit": "℃",+ "min": -55,+ "typ": null,+ "max": 150,+ "conditions": "",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Drain-Source Breakdown Voltage",+ "symbol": "V(BR)DSS",+ "kind": "electrical",+ "unit": "V",+ "min": -40,+ "typ": null,+ "max": null,+ "conditions": "VGS=0V, ID= -250μA",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Zero Gate Voltage Drain Current",+ "symbol": "IDSS",+ "kind": "electrical",+ "unit": "μA",+ "min": null,+ "typ": null,+ "max": -1,+ "conditions": "VDS= -40V, VGS=0V",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Gate to Body Leakage Current",+ "symbol": "IGSS",+ "kind": "electrical",+ "unit": "nA",+ "min": -100,+ "typ": null,+ "max": 100,+ "conditions": "VDS=0V, VGS= ±20V",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Gate Threshold Voltage",+ "symbol": "VGS(th)",+ "kind": "electrical",+ "unit": "V",+ "min": -1,+ "typ": -1.6,+ "max": -2.5,+ "conditions": "VDS=VGS, ID= -250μA",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Static Drain-Source on-Resistance",+ "symbol": "RDS(on)",+ "kind": "electrical",+ "unit": "mΩ",+ "min": null,+ "typ": 70,+ "max": 90,+ "conditions": "VGS= -10V, ID= -3A",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Static Drain-Source on-Resistance",+ "symbol": "RDS(on)",+ "kind": "electrical",+ "unit": "mΩ",+ "min": null,+ "typ": 90,+ "max": 125,+ "conditions": "VGS= -4.5V, ID= -2A",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Maximum Continuous Drain to Source Diode Forward Current",+ "symbol": "IS",+ "kind": "electrical",+ "unit": "A",+ "min": null,+ "typ": null,+ "max": -5,+ "conditions": "",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Maximum Pulsed Drain to Source Diode Forward Current",+ "symbol": "ISM",+ "kind": "electrical",+ "unit": "A",+ "min": null,+ "typ": null,+ "max": -20,+ "conditions": "",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Drain to Source Diode Forward Voltage",+ "symbol": "VSD",+ "kind": "electrical",+ "unit": "V",+ "min": null,+ "typ": -0.8,+ "max": -1.2,+ "conditions": "VGS=0V, IS= -5A",+ "source_page": 2,+ "source": "datasheet"+ }+ ] } }, "variants": [],@@ -189,4 +400,4 @@ "visibility": { "public": true }-}+}