component
JMTL2301C
Public Made by Adomby adom
Jiangsu JieJie Microelectronics MOSFETs, SOT-23. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
Generated by kicad-footprint-generator · KiCad file format 20260206
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|---|---|
| docs | 17d ago |
| viewers | 17d ago |
| jmtl2301c-etched.glb | 17d ago |
| jmtl2301c-etched.step | 17d ago |
| jmtl2301c-hero.glb | 17d ago |
| jmtl2301c-hero.overlay.json | 17d ago |
| jmtl2301c.glb | 17d ago |
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| jmtl2301c.step | 17d ago |
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| README.md | 17d ago |
JMTL2301C
Jiangsu JieJie Microelectronics · MOSFETs · SOT-23
JMTL2301C from Jiangsu JieJie Microelectronics, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate; controls the P-channel MOSFET, with VGSS limited to ±12 V and a threshold VGS(th) of -0.5 to -1.0 V at ID = -250 µA. |
| 2 | S | passive | Source; P-channel MOSFET source terminal, with continuous drain current of -3 A at TA = 25 °C. |
| 3 | D | passive | Drain; P-channel MOSFET drain terminal, with a drain-source voltage rating of -20 V and pulsed drain current of -12 A. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Jiangsu JieJie Microelectronics |
| Package | SOT-23 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDSS | -20 | V | 1 | |||
| Gate-Source Voltage | VGSS | -12 | 12 | V | 1 | ||
| Continuous Drain Current | ID | -3 | A | TA = 25℃ | 1 | ||
| Continuous Drain Current | ID | -2 | A | TA = 100℃ | 1 | ||
| Pulsed Drain Current | IDM | -12 | A | Note 1 (repetitive rating: pulse width limited by maximum junction temperature) | 1 | ||
| Power Dissipation | PD | 1 | W | TA = 25℃ | 1 | ||
| Thermal Resistance, Junction to Ambient | RθJA | 125 | ℃/W | 1 | |||
| Operating and Storage Temperature Range | TJ, TSTG | -55 | 150 | ℃ | 1 | ||
| Drain-Source Breakdown Voltage | V(BR)DSS | -20 | V | VGS=0V, ID= -250μA | 2 | ||
| Zero Gate Voltage Drain Current | IDSS | -1 | μA | VDS= -20V, VGS=0V | 2 | ||
| Gate to Body Leakage Current | IGSS | -100 | 100 | nA | VDS=0V, VGS= ±12V | 2 | |
| Gate Threshold Voltage | VGS(th) | -0.5 | -0.7 | -1 | V | VDS=VGS, ID= -250μA | 2 |
| Static Drain-Source on-Resistance | RDS(on) | 55 | 70 | mΩ | VGS= -4.5V, ID= -3A | 2 | |
| Static Drain-Source on-Resistance | RDS(on) | 70 | 100 | mΩ | VGS= -2.5V, ID= -2A | 2 | |
| Maximum Continuous Drain to Source Diode Forward Current | IS | -3 | A | 2 | |||
| Maximum Pulsed Drain to Source Diode Forward Current | ISM | -12 | A | 2 | |||
| Drain to Source Diode Forward Voltage | VSD | -1.2 | V | VGS=0V, IS= -3A | 2 |
CAD (KiCad official)
- Symbol:
JMTL2301C - Footprint:
Package_TO_SOT_SMD:SOT-23 - 3D model: SOT-23 (KiCad packages3D, STEP)
- 3D model files:
jmtl2301c-etched.step/jmtl2301c-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);jmtl2301c.step/jmtl2301c.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Jiangsu JieJie Microelectronics datasheet (6 pp, sha256
53d83a36b6d47678, retrieved 2026-10-18, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).