component
JMTK60N04B
Public Made by Adomby adom
Jiangsu JieJie Microelectronics MOSFETs, TO-252. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
Generated by kicad-footprint-generator · KiCad file format 20260206
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JMTK60N04B
Jiangsu JieJie Microelectronics · MOSFETs · TO-252
JMTK60N04B from Jiangsu JieJie Microelectronics, in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate; controls the channel, with VGS rated ±20 V max and a threshold of 1.0 to 2.5 V at ID=250μA. |
| 2 | D | passive | Drain (center lead, connected to the tab); VDSS 40 V max, continuous ID 60 A at TC=25℃ and 240 A pulsed. |
| 3 | S | passive | Source; carries the 60 A continuous current (TC=25℃) and the body diode current IS up to 60 A. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Jiangsu JieJie Microelectronics |
| Package | TO-252 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDSS | 40 | V | 1 | |||
| Gate-Source Voltage | VGSS | -20 | 20 | V | 1 | ||
| Continuous Drain Current | ID | 60 | A | TC = 25℃ | 1 | ||
| Continuous Drain Current | ID | 39 | A | TC = 100℃ | 1 | ||
| Pulsed Drain Current | IDM | 240 | A | 1 | |||
| Single Pulsed Avalanche Energy | EAS | 81 | mJ | Note 2: TJ=25℃, VDD=20V, VG=10V, RG=25Ω, L=0.5mH, IAS=18A | 1 | ||
| Power Dissipation | PD | 47 | W | TC = 25℃ | 1 | ||
| Thermal Resistance, Junction to Case | RθJC | 3.2 | ℃/W | 1 | |||
| Operating and Storage Temperature Range | TJ, TSTG | -55 | 175 | ℃ | 1 | ||
| Drain-Source Breakdown Voltage | V(BR)DSS | 40 | V | VGS=0V, ID=250μA | 2 | ||
| Zero Gate Voltage Drain Current | IDSS | 1 | μA | VDS =40V, VGS = 0V | 2 | ||
| Gate to Body Leakage Current | IGSS | -100 | 100 | nA | VDS =0V, VGS = ±20V | 2 | |
| Gate Threshold Voltage | VGS(th) | 1 | 1.7 | 2.5 | V | VDS= VGS, ID=250μA | 2 |
| Static Drain-Source on-Resistance | RDS(on) | 5.5 | 7 | mΩ | VGS =10V, ID =30A | 2 | |
| Static Drain-Source on-Resistance | RDS(on) | 9 | 12 | mΩ | VGS =4.5V, ID =20A | 2 | |
| Maximum Continuous Drain to Source Diode Forward Current | IS | 60 | A | 2 | |||
| Maximum Pulsed Drain to Source Diode Forward Current | ISM | 240 | A | 2 | |||
| Drain to Source Diode Forward Voltage | VSD | 1.2 | V | VGS =0V, IS=30A | 2 |
CAD (KiCad official)
- Symbol:
JMTK60N04B - Footprint:
Package_TO_SOT_SMD:TO-252-2 - 3D model: TO-252 (KiCad packages3D, STEP)
- 3D model files:
jmtk60n04b-etched.step/jmtk60n04b-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);jmtk60n04b.step/jmtk60n04b.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Jiangsu JieJie Microelectronics datasheet (7 pp, sha256
d2a4bc611625a489, retrieved 2026-10-18, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).