component
JMTK3002B
Public Made by Adomby adom
Jiangsu JieJie Microelectronics MOSFETs, TO-252. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
Generated by kicad-footprint-generator · KiCad file format 20260206
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|---|---|
| docs | 17d ago |
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| jmtk3002b-etched.glb | 17d ago |
| jmtk3002b-etched.step | 17d ago |
| jmtk3002b-hero.glb | 17d ago |
| jmtk3002b-hero.overlay.json | 17d ago |
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JMTK3002B
Jiangsu JieJie Microelectronics · MOSFETs · TO-252
JMTK3002B from Jiangsu JieJie Microelectronics, in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate; gate-source voltage max ±20 V, threshold VGS(th) 1.0 to 2.5 V at VDS=VGS, ID=250 µA. |
| 2 | D | passive | Drain (middle lead, also connected to the exposed tab); VDSS 30 V, continuous drain current 180 A at TC=25℃. |
| 3 | S | passive | Source; RDS(on) below 2.7 mΩ at VGS=10V, ID=30A, and body diode current up to 180 A. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Jiangsu JieJie Microelectronics |
| Package | TO-252 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDSS | 30 | V | 1 | |||
| Gate-Source Voltage | VGSS | -20 | 20 | V | 1 | ||
| Continuous Drain Current | ID | 180 | A | TC = 25℃ | 1 | ||
| Continuous Drain Current | ID | 117 | A | TC = 100℃ | 1 | ||
| Pulsed Drain Current | IDM | 720 | A | 1 | |||
| Single Pulsed Avalanche Energy | EAS | 324 | mJ | 1 | |||
| Power Dissipation | PD | 149 | W | TC = 25℃ | 1 | ||
| Thermal Resistance, Junction to Case | RθJC | 1 | ℃/W | 1 | |||
| Operating and Storage Temperature Range | TJ, TSTG | -55 | 175 | ℃ | 1 | ||
| Drain-Source Breakdown Voltage | V(BR)DSS | 30 | V | VGS=0V, ID=250μA | 2 | ||
| Zero Gate Voltage Drain Current | IDSS | 1 | μA | VDS=30V, VGS=0V | 2 | ||
| Gate to Body Leakage Current | IGSS | -100 | 100 | nA | VDS=0V, VGS=±20V | 2 | |
| Gate Threshold Voltage | VGS(th) | 1 | 1.5 | 2.5 | V | VDS=VGS, ID=250μA | 2 |
| Static Drain-Source on-Resistance | RDS(on) | 2.1 | 2.7 | mΩ | VGS=10V, ID=30A | 2 | |
| Static Drain-Source on-Resistance | RDS(on) | 3.5 | 5 | mΩ | VGS=4.5V, ID=20A | 2 | |
| Maximum Continuous Drain to Source Diode Forward Current | IS | 180 | A | 2 | |||
| Maximum Pulsed Drain to Source Diode Forward Current | ISM | 720 | A | 2 | |||
| Drain to Source Diode Forward Voltage | VSD | 1.2 | V | VGS=0V, IS=30A | 2 |
CAD (KiCad official)
- Symbol:
JMTK3002B - Footprint:
Package_TO_SOT_SMD:TO-252-2 - 3D model: TO-252 (KiCad packages3D, STEP)
- 3D model files:
jmtk3002b-etched.step/jmtk3002b-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);jmtk3002b.step/jmtk3002b.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Jiangsu JieJie Microelectronics datasheet (7 pp, sha256
26f7e5cdbec54bff, retrieved 2026-10-18, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).