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JMTK160P03A
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Jiangsu JieJie Microelectronics MOSFETs, TO-252. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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JMTK160P03A
Jiangsu JieJie Microelectronics · MOSFETs · TO-252
JMTK160P03A from Jiangsu JieJie Microelectronics, in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate; drive with VGS limited to ±20 V, with RDS(ON) below 14 mΩ at VGS = -10 V and below 22.5 mΩ at VGS = -4.5 V, and threshold of -1.0 to -2.5 V at ID = -250 µA. |
| 2 | D | passive | Drain, also connected to the metal tab; VDSS is -30 V and continuous drain current is -45 A at TC = 25 °C (-180 A pulsed). |
| 3 | S | passive | Source; the body diode runs from drain to source with a continuous forward current of -45 A and VSD of -1.2 V max at IS = -30 A. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Jiangsu JieJie Microelectronics |
| Package | TO-252 |
| Category | Transistors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDSS | -30 | V | TC=25℃ | 1 | ||
| Gate-Source Voltage | VGSS | -20 | 20 | V | TC=25℃ | 1 | |
| Continuous Drain Current | ID | -45 | A | TC = 25℃ | 1 | ||
| Continuous Drain Current | ID | -29 | A | TC = 100℃ | 1 | ||
| Pulsed Drain Current | IDM | -180 | A | TC=25℃, note1 | 1 | ||
| Single Pulsed Avalanche Energy | EAS | 64 | mJ | TC=25℃, note2 | 1 | ||
| Power Dissipation | PD | 54 | W | TC = 25℃ | 1 | ||
| Thermal Resistance, Junction to Case | RθJC | 2.8 | ℃/W | 1 | |||
| Operating and Storage Temperature Range | TJ, TSTG | -55 | 175 | ℃ | 1 | ||
| Drain-Source Breakdown Voltage | V(BR)DSS | -30 | V | VGS=0V, ID= -250μA | 2 | ||
| Zero Gate Voltage Drain Current | IDSS | -1 | μA | VDS= -30V, VGS=0V | 2 | ||
| Gate to Body Leakage Current | IGSS | -100 | 100 | nA | VDS=0V, VGS= ±20V | 2 | |
| Gate Threshold Voltage | VGS(th) | -1 | -1.6 | -2.5 | V | VDS=VGS, ID= -250μA | 2 |
| Static Drain-Source on-Resistance | RDS(on) | 10 | 14 | mΩ | VGS= -10V, ID= -10A | 2 | |
| Static Drain-Source on-Resistance | RDS(on) | 16 | 22.5 | mΩ | VGS= -4.5V, ID= -5A | 2 | |
| Maximum Continuous Drain to Source Diode Forward Current | IS | -45 | A | 2 | |||
| Maximum Pulsed Drain to Source Diode Forward Current | ISM | -180 | A | 2 | |||
| Drain to Source Diode Forward Voltage | VSD | -0.8 | -1.2 | V | VGS=0V, IS= -30A | 2 | |
| Input Capacitance | Ciss | 2130 | pF | VDS= -15V, VGS=0V, f=1.0MHz | 2 | ||
| Output Capacitance | Coss | 280 | pF | VDS= -15V, VGS=0V, f=1.0MHz | 2 | ||
| Reverse Transfer Capacitance | Crss | 252 | pF | VDS= -15V, VGS=0V, f=1.0MHz | 2 | ||
| Total Gate Charge | Qg | 22 | nC | VDS= -15V, ID= -5A, VGS= -10V | 2 | ||
| Gate-Source Charge | Qgs | 4 | nC | VDS= -15V, ID= -5A, VGS= -10V | 2 | ||
| Gate-Drain(Miller) Charge | Qgd | 5.8 | nC | VDS= -15V, ID= -5A, VGS= -10V | 2 | ||
| Turn-on Delay Time | td(on) | 9 | ns | VDD= -15V, ID= -10A, VGS= -10V, RGEN=2.5Ω | 2 | ||
| Turn-on Rise Time | tr | 13 | ns | VDD= -15V, ID= -10A, VGS= -10V, RGEN=2.5Ω | 2 | ||
| Turn-off Delay Time | td(off) | 48 | ns | VDD= -15V, ID= -10A, VGS= -10V, RGEN=2.5Ω | 2 | ||
| Turn-off Fall Time | tf | 20 | ns | VDD= -15V, ID= -10A, VGS= -10V, RGEN=2.5Ω | 2 |
CAD (KiCad official)
- Symbol:
JMTK160P03A - Footprint:
Package_TO_SOT_SMD:TO-252-2 - 3D model: TO-252 (KiCad packages3D, STEP)
- 3D model files:
jmtk160p03a-etched.step/jmtk160p03a-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);jmtk160p03a.step/jmtk160p03a.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Jiangsu JieJie Microelectronics datasheet (7 pp, sha256
ab9dc7db35d9f85e, retrieved 2026-10-22, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).
# JMTK160P03A
**Jiangsu JieJie Microelectronics** · MOSFETs · TO-252
JMTK160P03A from Jiangsu JieJie Microelectronics, in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
## Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate; drive with VGS limited to ±20 V, with RDS(ON) below 14 mΩ at VGS = -10 V and below 22.5 mΩ at VGS = -4.5 V, and threshold of -1.0 to -2.5 V at ID = -250 µA. |
| 2 | D | passive | Drain, also connected to the metal tab; VDSS is -30 V and continuous drain current is -45 A at TC = 25 °C (-180 A pulsed). |
| 3 | S | passive | Source; the body diode runs from drain to source with a continuous forward current of -45 A and VSD of -1.2 V max at IS = -30 A. |
## Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Jiangsu JieJie Microelectronics |
| Package | TO-252 |
| Category | Transistors |
| Pins | 3 |
## Electrical characteristics
Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDSS | | | -30 | V | TC=25℃ | 1 |
| Gate-Source Voltage | VGSS | -20 | | 20 | V | TC=25℃ | 1 |
| Continuous Drain Current | ID | | | -45 | A | TC = 25℃ | 1 |
| Continuous Drain Current | ID | | | -29 | A | TC = 100℃ | 1 |
| Pulsed Drain Current | IDM | | | -180 | A | TC=25℃, note1 | 1 |
| Single Pulsed Avalanche Energy | EAS | | | 64 | mJ | TC=25℃, note2 | 1 |
| Power Dissipation | PD | | | 54 | W | TC = 25℃ | 1 |
| Thermal Resistance, Junction to Case | RθJC | | | 2.8 | ℃/W | | 1 |
| Operating and Storage Temperature Range | TJ, TSTG | -55 | | 175 | ℃ | | 1 |
| Drain-Source Breakdown Voltage | V(BR)DSS | -30 | | | V | VGS=0V, ID= -250μA | 2 |
| Zero Gate Voltage Drain Current | IDSS | | | -1 | μA | VDS= -30V, VGS=0V | 2 |
| Gate to Body Leakage Current | IGSS | -100 | | 100 | nA | VDS=0V, VGS= ±20V | 2 |
| Gate Threshold Voltage | VGS(th) | -1 | -1.6 | -2.5 | V | VDS=VGS, ID= -250μA | 2 |
| Static Drain-Source on-Resistance | RDS(on) | | 10 | 14 | mΩ | VGS= -10V, ID= -10A | 2 |
| Static Drain-Source on-Resistance | RDS(on) | | 16 | 22.5 | mΩ | VGS= -4.5V, ID= -5A | 2 |
| Maximum Continuous Drain to Source Diode Forward Current | IS | | | -45 | A | | 2 |
| Maximum Pulsed Drain to Source Diode Forward Current | ISM | | | -180 | A | | 2 |
| Drain to Source Diode Forward Voltage | VSD | | -0.8 | -1.2 | V | VGS=0V, IS= -30A | 2 |
| Input Capacitance | Ciss | | 2130 | | pF | VDS= -15V, VGS=0V, f=1.0MHz | 2 |
| Output Capacitance | Coss | | 280 | | pF | VDS= -15V, VGS=0V, f=1.0MHz | 2 |
| Reverse Transfer Capacitance | Crss | | 252 | | pF | VDS= -15V, VGS=0V, f=1.0MHz | 2 |
| Total Gate Charge | Qg | | 22 | | nC | VDS= -15V, ID= -5A, VGS= -10V | 2 |
| Gate-Source Charge | Qgs | | 4 | | nC | VDS= -15V, ID= -5A, VGS= -10V | 2 |
| Gate-Drain(Miller) Charge | Qgd | | 5.8 | | nC | VDS= -15V, ID= -5A, VGS= -10V | 2 |
| Turn-on Delay Time | td(on) | | 9 | | ns | VDD= -15V, ID= -10A, VGS= -10V, RGEN=2.5Ω | 2 |
| Turn-on Rise Time | tr | | 13 | | ns | VDD= -15V, ID= -10A, VGS= -10V, RGEN=2.5Ω | 2 |
| Turn-off Delay Time | td(off) | | 48 | | ns | VDD= -15V, ID= -10A, VGS= -10V, RGEN=2.5Ω | 2 |
| Turn-off Fall Time | tf | | 20 | | ns | VDD= -15V, ID= -10A, VGS= -10V, RGEN=2.5Ω | 2 |
## CAD (KiCad official)
- Symbol: `JMTK160P03A`
- Footprint: `Package_TO_SOT_SMD:TO-252-2`
- 3D model: TO-252 (KiCad packages3D, STEP)
- 3D model files: `jmtk160p03a-etched.step` / `jmtk160p03a-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `jmtk160p03a.step` / `jmtk160p03a.glb` are the bare package body.
## Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- **Datasheet:** [Jiangsu JieJie Microelectronics datasheet](docs/jmtk160p03a-datasheet.pdf) (7 pp, sha256 `ab9dc7db35d9f85e`, retrieved 2026-10-22, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-sonnet-5-5` (text+vision), consensus `claude-opus-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).
[Datasheet PDF](docs/jmtk160p03a-datasheet.pdf)