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JMTK080P03A

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Jiangsu JieJie Microelectronics New Arrivals, TO-252. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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JMTK080P03A

Jiangsu JieJie Microelectronics · New Arrivals · TO-252

JMTK080P03A from Jiangsu JieJie Microelectronics, in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate; the marking and pin assignment view shows G as the left pin, with gate-source voltage limited to ±20 V and threshold of -1.0 to -2.5 V.
2 D passive Drain; the middle pin, connected to the drain tab, with VDSS of -30 V and continuous current of -60 A at TC=25℃.
3 S passive Source; the right pin in the marking and pin assignment view, with body diode forward current up to -60 A continuous.

Key specifications

Parameter Value
Manufacturer Jiangsu JieJie Microelectronics
Package TO-252
Category Others
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Breakdown Voltage V(BR)DSS -30 V VGS=0V, ID= -250μA 2
Zero Gate Voltage Drain Current IDSS -1 μA VDS= -30V, VGS=0V 2
Gate to Body Leakage Current IGSS -100 100 nA VDS=0V, VGS= ±20V 2
Gate Threshold Voltage VGS(th) -1 -1.5 -2.5 V VDS=VGS, ID= -250μA 2
Static Drain-Source on-Resistance RDS(on) 5.8 7.5 mΩ VGS= -10V, ID= -30A 2
Static Drain-Source on-Resistance RDS(on) 9 12.6 mΩ VGS= -4.5V, ID= -20A 2
Maximum Continuous Drain to Source Diode Forward Current IS -60 A 2
Maximum Pulsed Drain to Source Diode Forward Current ISM -240 A 2
Drain to Source Diode Forward Voltage VSD -0.8 -1.2 V VGS=0V, IS= -30A 2
Drain-Source Voltage VDSS -30 V TC=25℃ 1
Gate-Source Voltage VGSS -20 20 V TC=25℃ 1
Continuous Drain Current ID -60 A TC = 25℃ 1
Continuous Drain Current ID -39 A TC = 100℃ 1
Pulsed Drain Current IDM -240 A note1 1
Single Pulsed Avalanche Energy EAS 144 mJ note2 1
Power Dissipation PD 54 W TC = 25℃ 1
Operating and Storage Temperature Range TJ, TSTG -55 175 ℃ 1
Thermal Resistance, Junction to Case RθJC 2.8 ℃/W 1
Input Capacitance Ciss 4650 pF VDS= -15V, VGS=0V, f=1.0MHz 2
Output Capacitance Coss 550 pF VDS= -15V, VGS=0V, f=1.0MHz 2
Reverse Transfer Capacitance Crss 486 pF VDS= -15V, VGS=0V, f=1.0MHz 2
Total Gate Charge Qg 45 nC VDS= -15V, ID= -20A, VGS= -10V 2
Gate-Source Charge Qgs 8 nC VDS= -15V, ID= -20A, VGS= -10V 2
Gate-Drain Charge Qgd 12 nC VDS= -15V, ID= -20A, VGS= -10V 2
Turn-on Delay Time td(on) 19 ns VDD= -15V, ID= -30A, VGS= -10V, RGEN=2.5Ω 2
Turn-on Rise Time tr 15 ns VDD= -15V, ID= -30A, VGS= -10V, RGEN=2.5Ω 2
Turn-off Delay Time td(off) 65 ns VDD= -15V, ID= -30A, VGS= -10V, RGEN=2.5Ω 2
Turn-off Fall Time tf 36 ns VDD= -15V, ID= -30A, VGS= -10V, RGEN=2.5Ω 2

CAD (KiCad official)

  • Symbol: JMTK080P03A
  • Footprint: Package_TO_SOT_SMD:TO-252-2
  • 3D model: TO-252 (KiCad packages3D, STEP)
  • 3D model files: jmtk080p03a-etched.step / jmtk080p03a-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); jmtk080p03a.step / jmtk080p03a.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Jiangsu JieJie Microelectronics datasheet (7 pp, sha256 a1bbc7f866d60b19, retrieved 2026-10-22, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF