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JMTJ3400A
Public Made by Adomby adom
Jiangsu JieJie Microelectronics Bipolar (BJT), SOT-23-3L. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownJMTJ3400A
Jiangsu JieJie Microelectronics · Bipolar (BJT) · SOT-23-3L
JMTJ3400A from Jiangsu JieJie Microelectronics, in a SOT-23-3L. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate; the datasheet gives Gate-to-Source Voltage as ±12 V maximum, with threshold VGS(th) 0.6 to 1.3 V. |
| 2 | S | passive | Source; continuous drain current is 5.8 A at TA = 25°C and the body diode continuous current IS is 5.8 A max. |
| 3 | D | passive | Drain; Drain-to-Source Voltage is 30 V max, with pulsed drain current of 23 A. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Jiangsu JieJie Microelectronics |
| Package | SOT-23-3L |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-to-Source Voltage | VDS | 30 | V | 1 | |||
| Gate-to-Source Voltage | VGS | -12 | 12 | V | 1 | ||
| Continuous Drain Current | ID | 5.8 | A | TA = 25°C | 1 | ||
| Continuous Drain Current | ID | 4 | A | TA = 100°C | 1 | ||
| Pulsed Drain Current (1) | IDM | 23 | A | 1 | |||
| Power Dissipation | PD | 1.3 | W | TA = 25°C | 1 | ||
| Junction & Storage Temperature Range | TJ, TSTG | -55 | 150 | °C | 1 | ||
| Thermal Resistance, Junction to Ambient (2) | RθJA | 93 | °C/W | 1 | |||
| Drain-Source Breakdown Voltage | V(BR)DSS | 30 | V | ID = 250µA, VGS = 0V | 2 | ||
| Zero Gate Voltage Drain Current | IDSS | 1 | µA | VDS = 30V, VGS = 0V | 2 | ||
| Gate-Body Leakage Current | IGSS | -100 | 100 | nA | VDS = 0V, VGS = ±12V | 2 | |
| Gate Threshold Voltage | VGS(th) | 0.6 | 0.95 | 1.3 | V | VDS = VGS, ID = 250µA | 2 |
| Static Drain-Source ON-Resistance | RDS(ON) | 20.5 | 26.7 | mΩ | VGS = 10V, ID = 4.2A | 2 | |
| Static Drain-Source ON-Resistance | RDS(ON) | 22 | 28.6 | mΩ | VGS = 4.5V, ID = 4A | 2 | |
| Static Drain-Source ON-Resistance | RDS(ON) | 27.1 | 35.2 | mΩ | VGS = 2.5V, ID = 1A | 2 | |
| Maximum Continuous Drain to Source Diode Forward Current | IS | 5.8 | A | 2 | |||
| Maximum Pulsed Drain to Source Diode Forward Current | ISM | 23 | A | 2 | |||
| Drain to Source Diode Forward Voltage | VSD | 1.2 | V | VGS = 0V, IS = 5.8A | 2 |
CAD (KiCad official)
- Symbol:
JMTJ3400A - Footprint:
Package_TO_SOT_SMD:SOT-23-3 - 3D model: SOT-23-3L (KiCad packages3D, STEP)
- 3D model files:
jmtj3400a-etched.step/jmtj3400a-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);jmtj3400a.step/jmtj3400a.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Jiangsu JieJie Microelectronics datasheet (6 pp, sha256
98211cf2d1ce04cc, retrieved 2026-10-18, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).