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JMTE3003A
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Jiangsu JieJie Microelectronics MOSFETs, TO-263-2. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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JMTE3003A
Jiangsu JieJie Microelectronics · MOSFETs · TO-263-2
JMTE3003A from Jiangsu JieJie Microelectronics, in a TO-263-2. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate; gate-to-source voltage is rated at ±20 V maximum, with a threshold of 1.0 to 2.5 V at ID = 250 µA. |
| 2 | D | passive | Drain, also connected to the exposed tab; drain-to-source voltage is rated at 30 V, with continuous current of 150 A at TC = 25°C. |
| 3 | S | passive | Source; the body diode between source and drain has a maximum continuous forward current of 150 A. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Jiangsu JieJie Microelectronics |
| Package | TO-263-2 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-to-Source Voltage | VDS | 30 | V | 1 | |||
| Gate-to-Source Voltage | VGS | -20 | 20 | V | 1 | ||
| Continuous Drain Current | ID | 150 | A | TC = 25°C | 1 | ||
| Continuous Drain Current | ID | 95 | A | TC = 100°C | 1 | ||
| Pulsed Drain Current | IDM | 600 | A | Note 1: Repetitive rating, pulse width limited by maximum junction temperature | 1 | ||
| Single Pulsed Avalanche Energy | EAS | 210 | mJ | Note 2: Starting TJ=25C, VDD=15V, VG=10V, RG=25ohm, L=0.5mH, IAS=29A | 1 | ||
| Power Dissipation | PD | 347 | W | TC = 25°C | 1 | ||
| Junction & Storage Temperature Range | TJ, TSTG | -55 | 150 | °C | 1 | ||
| Drain-Source Breakdown Voltage | V(BR)DSS | 30 | V | ID = 250µA, VGS = 0V | 2 | ||
| Zero Gate Voltage Drain Current | IDSS | 1 | µA | VDS = 30V, VGS = 0V | 2 | ||
| Gate-Body Leakage Current | IGSS | -100 | 100 | nA | VDS = 0V, VGS = ±20V | 2 | |
| Gate Threshold Voltage | VGS(th) | 1 | 1.9 | 2.5 | V | VDS = VGS, ID = 250µA | 2 |
| Static Drain-Source On-Resistance | RDS(ON) | 2.2 | 2.9 | mΩ | VGS = 10V, ID = 30A | 2 | |
| Static Drain-Source On-Resistance | RDS(ON) | 5 | 6.5 | mΩ | VGS = 4.5V, ID = 20A | 2 | |
| Maximum Continuous Drain to Source Diode Forward Current | IS | 150 | A | 2 | |||
| Maximum Pulsed Drain to Source Diode Forward Current | ISM | 600 | A | 2 | |||
| Drain to Source Diode Forward Voltage | VSD | 1.2 | V | VGS = 0V, IS = 30A | 2 | ||
| Junction to Ambient Thermal Resistance | RθJA | 30 | °C/W | Note 3: device mounted on 1 inch² pad of 2oz copper FR4 PCB | 1 | ||
| Junction to Case Thermal Resistance | RθJC | 0.36 | °C/W | 1 |
CAD (KiCad official)
- Symbol:
JMTE3003A - Footprint:
Package_TO_SOT_SMD:TO-263-2 - 3D model: TO-263-2 (KiCad packages3D, STEP)
- 3D model files:
jmte3003a-etched.step/jmte3003a-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);jmte3003a.step/jmte3003a.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Jiangsu JieJie Microelectronics datasheet (6 pp, sha256
c2762f5b415bf149, retrieved 2026-10-18, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).
# JMTE3003A
**Jiangsu JieJie Microelectronics** · MOSFETs · TO-263-2
JMTE3003A from Jiangsu JieJie Microelectronics, in a TO-263-2. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
## Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate; gate-to-source voltage is rated at ±20 V maximum, with a threshold of 1.0 to 2.5 V at ID = 250 µA. |
| 2 | D | passive | Drain, also connected to the exposed tab; drain-to-source voltage is rated at 30 V, with continuous current of 150 A at TC = 25°C. |
| 3 | S | passive | Source; the body diode between source and drain has a maximum continuous forward current of 150 A. |
## Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Jiangsu JieJie Microelectronics |
| Package | TO-263-2 |
| Category | Transistors/Thyristors |
| Pins | 3 |
## Electrical characteristics
Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-to-Source Voltage | VDS | | | 30 | V | | 1 |
| Gate-to-Source Voltage | VGS | -20 | | 20 | V | | 1 |
| Continuous Drain Current | ID | | | 150 | A | TC = 25°C | 1 |
| Continuous Drain Current | ID | | | 95 | A | TC = 100°C | 1 |
| Pulsed Drain Current | IDM | | | 600 | A | Note 1: Repetitive rating, pulse width limited by maximum junction temperature | 1 |
| Single Pulsed Avalanche Energy | EAS | | | 210 | mJ | Note 2: Starting TJ=25C, VDD=15V, VG=10V, RG=25ohm, L=0.5mH, IAS=29A | 1 |
| Power Dissipation | PD | | | 347 | W | TC = 25°C | 1 |
| Junction & Storage Temperature Range | TJ, TSTG | -55 | | 150 | °C | | 1 |
| Drain-Source Breakdown Voltage | V(BR)DSS | 30 | | | V | ID = 250µA, VGS = 0V | 2 |
| Zero Gate Voltage Drain Current | IDSS | | | 1 | µA | VDS = 30V, VGS = 0V | 2 |
| Gate-Body Leakage Current | IGSS | -100 | | 100 | nA | VDS = 0V, VGS = ±20V | 2 |
| Gate Threshold Voltage | VGS(th) | 1 | 1.9 | 2.5 | V | VDS = VGS, ID = 250µA | 2 |
| Static Drain-Source On-Resistance | RDS(ON) | | 2.2 | 2.9 | mΩ | VGS = 10V, ID = 30A | 2 |
| Static Drain-Source On-Resistance | RDS(ON) | | 5 | 6.5 | mΩ | VGS = 4.5V, ID = 20A | 2 |
| Maximum Continuous Drain to Source Diode Forward Current | IS | | | 150 | A | | 2 |
| Maximum Pulsed Drain to Source Diode Forward Current | ISM | | | 600 | A | | 2 |
| Drain to Source Diode Forward Voltage | VSD | | | 1.2 | V | VGS = 0V, IS = 30A | 2 |
| Junction to Ambient Thermal Resistance | RθJA | | 30 | | °C/W | Note 3: device mounted on 1 inch² pad of 2oz copper FR4 PCB | 1 |
| Junction to Case Thermal Resistance | RθJC | | 0.36 | | °C/W | | 1 |
## CAD (KiCad official)
- Symbol: `JMTE3003A`
- Footprint: `Package_TO_SOT_SMD:TO-263-2`
- 3D model: TO-263-2 (KiCad packages3D, STEP)
- 3D model files: `jmte3003a-etched.step` / `jmte3003a-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `jmte3003a.step` / `jmte3003a.glb` are the bare package body.
## Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- **Datasheet:** [Jiangsu JieJie Microelectronics datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8588905195518496768) (6 pp, sha256 `c2762f5b415bf149`, retrieved 2026-10-18, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-sonnet-5-5` (text+vision), consensus `claude-opus-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).
[Datasheet PDF](docs/jmte3003a-datasheet.pdf)