component
JMTE025N04D
Public Made by Adomby adom
Jiangsu JieJie Microelectronics MOSFETs, TO-263. Pinout reviewed by a person against the datasheet, KiCad symbol/footprint/3D.
3D Model
Open in new tab ↗
Loads when you scroll to it. Unloads after 5 minutes in the background.
Symbol & Footprint
Schematic Symbol
Open full view ↗Loads when you scroll to it. Unloads after 5 minutes in the background.
PCB Footprint
Open full view ↗Loads when you scroll to it. Unloads after 5 minutes in the background.
Datasheet
Open in new tab ↗Loads when you scroll to it. Unloads after 5 minutes in the background.
README
markdownJMTE025N04D
Jiangsu JieJie Microelectronics · MOSFETs · TO-263
JMTE025N04D from Jiangsu JieJie Microelectronics, in a TO-263. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate; controls the channel, with VGS rated ±25V and a 2 to 4V threshold (VDS=VGS, ID=250μA). |
| 2 | D | passive | Drain (center lead, also the tab); VDSS 40V and continuous drain current 190A at TC=25℃. |
| 3 | S | passive | Source; carries the 190A continuous source current and the body diode IS of 190A. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Jiangsu JieJie Microelectronics |
| Package | TO-263 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Breakdown Voltage | V(BR)DSS | 40 | V | VGS=0V, ID=250μA | 2 | ||
| Zero Gate Voltage Drain Current | IDSS | 1 | μA | VDS=40V, VGS=0V | 2 | ||
| Gate to Body Leakage Current | IGSS | -100 | 100 | nA | VDS=0V, VGS= ±25V | 2 | |
| Gate Threshold Voltage | VGS(th) | 2 | 3 | 4 | V | VDS=VGS, ID=250μA | 2 |
| Static Drain-Source on-Resistance | RDS(on) | 1.9 | 2.6 | mΩ | VGS=10V, ID=30A (pulse test, see note 3) | 2 | |
| Drain to Source Diode Forward Voltage | VSD | 1.2 | V | VGS=0V, IS=30A | 2 | ||
| Maximum Continuous Drain to Source Diode Forward Current | IS | 190 | A | 2 | |||
| Maximum Pulsed Drain to Source Diode Forward Current | ISM | 760 | A | 2 | |||
| Drain-Source Voltage | VDSS | 40 | V | 1 | |||
| Gate-Source Voltage | VGSS | -25 | 25 | V | 1 | ||
| Continuous Drain Current | ID | 190 | A | TC = 25℃ | 1 | ||
| Continuous Drain Current | ID | 124 | A | TC = 100℃ | 1 | ||
| Pulsed Drain Current | IDM | 760 | A | note 1: repetitive rating, pulse width limited by maximum junction temperature | 1 | ||
| Single Pulsed Avalanche Energy | EAS | 576 | mJ | note 2: TJ=25℃, VDD=50V, VG=10V, L=0.5mH, Rg=25Ω, IAS=48A | 1 | ||
| Power Dissipation | PD | 197 | W | TC = 25℃ | 1 | ||
| Operating and Storage Temperature Range | TJ, TSTG | -55 | 175 | ℃ | 1 | ||
| Thermal Resistance, Junction to Case | RθJC | 0.76 | ℃/W | 1 |
CAD (KiCad official)
- Symbol:
JMTE025N04D - Footprint:
Package_TO_SOT_SMD:TO-263-2 - 3D model: TO-263 (KiCad packages3D, STEP)
- 3D model files:
jmte025n04d-etched.step/jmte025n04d-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);jmte025n04d.step/jmte025n04d.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Jiangsu JieJie Microelectronics datasheet (6 pp, sha256
f895f2cc7afb13e9, retrieved 2026-10-22, tier: lcsc) - Extractor:
ds2sf(Claude). Every pin and dimension is cited to a datasheet page; it refuses to fabricate. - CAD: KiCad official libraries (CC-BY-SA 4.0).