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JMSH1507AE-13
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Jiangsu JieJie Microelectronics MOSFETs, TO-263. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownJMSH1507AE-13
Jiangsu JieJie Microelectronics · MOSFETs · TO-263
JMSH1507AE-13 from Jiangsu JieJie Microelectronics, in a TO-263. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate, with a maximum gate-to-source voltage of ±20 V and a gate threshold of 2.5 V min to 4.5 V max (3.2 V typ). |
| 2 | D | passive | Drain, rated for 150 V drain-to-source and 132 A continuous at TC = 25°C (528 A pulsed); also connected to the package tab. |
| 3 | S | passive | Source, which is the current return of the N-channel MOSFET; the body-diode continuous current is 288 A. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Jiangsu JieJie Microelectronics |
| Package | TO-263 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-to-Source Voltage | VDS | 150 | V | 1 | |||
| Gate-to-Source Voltage | VGS | -20 | 20 | V | 1 | ||
| Continuous Drain Current | ID | 132 | A | TC = 25°C | 1 | ||
| Continuous Drain Current | ID | 93 | A | TC = 100°C | 1 | ||
| Pulsed Drain Current | IDM | 528 | A | 1 | |||
| Avalanche Current | IAS | 60 | A | 1 | |||
| Avalanche Energy | EAS | 540 | mJ | 1 | |||
| Power Dissipation | PD | 288 | W | TC = 25°C | 1 | ||
| Power Dissipation | PD | 144 | W | TC = 100°C | 1 | ||
| Junction & Storage Temperature Range | TJ, TSTG | -55 | 175 | °C | 1 | ||
| Drain-Source Breakdown Voltage | V(BR)DSS | 150 | V | ID = 250A, VGS = 0V | 2 | ||
| Zero Gate Voltage Drain Current | IDSS | 1 | uA | VDS = 120V, VGS = 0V | 2 | ||
| Zero Gate Voltage Drain Current | IDSS | 5 | uA | VDS = 120V, VGS = 0V, TJ = 55°C | 2 | ||
| Gate-Body Leakage Current | IGSS | -100 | 100 | nA | VDS = 0V, VGS = ±20V | 2 | |
| Gate Threshold Voltage | VGS(th) | 2.5 | 3.2 | 4.5 | V | VDS = VGS, ID = 250A | 2 |
| Static Drain-Source ON-Resistance | RDS(ON) | 5.2 | 6.5 | mΩ | VGS = 10V, ID = 20A | 2 | |
| Diode Forward Voltage | VSD | 0.71 | 1 | V | IS = 1A, VGS = 0V | 2 | |
| Diode Continuous Current | IS | 288 | A | TC = 25°C | 2 | ||
| Thermal Resistance, Junction-to-Ambient | RθJA | 45 | 55 | °C/W | 2 | ||
| Thermal Resistance, Junction-to-Case | RθJC | 0.52 | 0.65 | °C/W | 2 | ||
| Forward Transconductance | gFS | 65 | S | VDS = 5V, ID = 20A | 2 | ||
| Input Capacitance | Ciss | 4320 | pF | VGS = 0V, VDS = 75V, f = 1MHz | 2 | ||
| Output Capacitance | Coss | 535 | pF | VGS = 0V, VDS = 75V, f = 1MHz | 2 | ||
| Reverse Transfer Capacitance | Crss | 7.2 | pF | VGS = 0V, VDS = 75V, f = 1MHz | 2 | ||
| Gate Resistance | Rg | 2.1 | Ω | VGS = 0V, VDS= 0V, f = 1MHz | 2 | ||
| Total Gate Charge (@ VGS = 10V) | Qg | 68 | nC | VGS = 0 to 10V, VDS = 75V, ID = 20A | 2 | ||
| Total Gate Charge (@ VGS = 6.0V) | Qg | 43 | nC | VDS = 75V, ID = 20A | 2 | ||
| Gate Source Charge | Qgs | 15 | nC | VDS = 75V, ID = 20A | 2 | ||
| Gate Drain Charge | Qgd | 14 | nC | VDS = 75V, ID = 20A | 2 | ||
| Turn-On Delay Time | tD(on) | 18.5 | ns | VGS = 10V, VDS = 75V, RL = 3.75, RGEN = 6 | 2 | ||
| Turn-On Rise Time | tr | 30 | ns | VGS = 10V, VDS = 75V, RL = 3.75, RGEN = 6 | 2 | ||
| Turn-Off Delay Time | tD(off) | 53 | ns | VGS = 10V, VDS = 75V, RL = 3.75, RGEN = 6 | 2 | ||
| Turn-Off Fall Time | tf | 41 | ns | VGS = 10V, VDS = 75V, RL = 3.75, RGEN = 6 | 2 | ||
| Body Diode Reverse Recovery Time | trr | 100 | ns | IF = 15A, dIF/dt = 100A/s | 2 | ||
| Body Diode Reverse Recovery Charge | Qrr | 150 | nC | IF = 15A, dIF/dt = 100A/s | 2 |
CAD (KiCad official)
- Symbol:
JMSH1507AE-13 - Footprint:
Package_TO_SOT_SMD:TO-263-2 - 3D model: TO-263 (KiCad packages3D, STEP)
- 3D model files:
jmsh1507ae-13-etched.step/jmsh1507ae-13-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);jmsh1507ae-13.step/jmsh1507ae-13.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Jiangsu JieJie Microelectronics datasheet (5 pp, sha256
15c7cb460079ede9, retrieved 2026-10-22, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).