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Contents

README

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JMSH1507AE-13

Jiangsu JieJie Microelectronics · MOSFETs · TO-263

JMSH1507AE-13 from Jiangsu JieJie Microelectronics, in a TO-263. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate, with a maximum gate-to-source voltage of ±20 V and a gate threshold of 2.5 V min to 4.5 V max (3.2 V typ).
2 D passive Drain, rated for 150 V drain-to-source and 132 A continuous at TC = 25°C (528 A pulsed); also connected to the package tab.
3 S passive Source, which is the current return of the N-channel MOSFET; the body-diode continuous current is 288 A.

Key specifications

Parameter Value
Manufacturer Jiangsu JieJie Microelectronics
Package TO-263
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-to-Source Voltage VDS 150 V 1
Gate-to-Source Voltage VGS -20 20 V 1
Continuous Drain Current ID 132 A TC = 25°C 1
Continuous Drain Current ID 93 A TC = 100°C 1
Pulsed Drain Current IDM 528 A 1
Avalanche Current IAS 60 A 1
Avalanche Energy EAS 540 mJ 1
Power Dissipation PD 288 W TC = 25°C 1
Power Dissipation PD 144 W TC = 100°C 1
Junction & Storage Temperature Range TJ, TSTG -55 175 °C 1
Drain-Source Breakdown Voltage V(BR)DSS 150 V ID = 250A, VGS = 0V 2
Zero Gate Voltage Drain Current IDSS 1 uA VDS = 120V, VGS = 0V 2
Zero Gate Voltage Drain Current IDSS 5 uA VDS = 120V, VGS = 0V, TJ = 55°C 2
Gate-Body Leakage Current IGSS -100 100 nA VDS = 0V, VGS = ±20V 2
Gate Threshold Voltage VGS(th) 2.5 3.2 4.5 V VDS = VGS, ID = 250A 2
Static Drain-Source ON-Resistance RDS(ON) 5.2 6.5 mΩ VGS = 10V, ID = 20A 2
Diode Forward Voltage VSD 0.71 1 V IS = 1A, VGS = 0V 2
Diode Continuous Current IS 288 A TC = 25°C 2
Thermal Resistance, Junction-to-Ambient RθJA 45 55 °C/W 2
Thermal Resistance, Junction-to-Case RθJC 0.52 0.65 °C/W 2
Forward Transconductance gFS 65 S VDS = 5V, ID = 20A 2
Input Capacitance Ciss 4320 pF VGS = 0V, VDS = 75V, f = 1MHz 2
Output Capacitance Coss 535 pF VGS = 0V, VDS = 75V, f = 1MHz 2
Reverse Transfer Capacitance Crss 7.2 pF VGS = 0V, VDS = 75V, f = 1MHz 2
Gate Resistance Rg 2.1 Ω VGS = 0V, VDS= 0V, f = 1MHz 2
Total Gate Charge (@ VGS = 10V) Qg 68 nC VGS = 0 to 10V, VDS = 75V, ID = 20A 2
Total Gate Charge (@ VGS = 6.0V) Qg 43 nC VDS = 75V, ID = 20A 2
Gate Source Charge Qgs 15 nC VDS = 75V, ID = 20A 2
Gate Drain Charge Qgd 14 nC VDS = 75V, ID = 20A 2
Turn-On Delay Time tD(on) 18.5 ns VGS = 10V, VDS = 75V, RL = 3.75, RGEN = 6 2
Turn-On Rise Time tr 30 ns VGS = 10V, VDS = 75V, RL = 3.75, RGEN = 6 2
Turn-Off Delay Time tD(off) 53 ns VGS = 10V, VDS = 75V, RL = 3.75, RGEN = 6 2
Turn-Off Fall Time tf 41 ns VGS = 10V, VDS = 75V, RL = 3.75, RGEN = 6 2
Body Diode Reverse Recovery Time trr 100 ns IF = 15A, dIF/dt = 100A/s 2
Body Diode Reverse Recovery Charge Qrr 150 nC IF = 15A, dIF/dt = 100A/s 2

CAD (KiCad official)

  • Symbol: JMSH1507AE-13
  • Footprint: Package_TO_SOT_SMD:TO-263-2
  • 3D model: TO-263 (KiCad packages3D, STEP)
  • 3D model files: jmsh1507ae-13-etched.step / jmsh1507ae-13-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); jmsh1507ae-13.step / jmsh1507ae-13.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Jiangsu JieJie Microelectronics datasheet (5 pp, sha256 15c7cb460079ede9, retrieved 2026-10-22, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF