component
JCS20N65FH-220MF
Public Made by Adomby adom
Jilin Sino Microelectronics MOSFETs, TO-220F-3. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
Generated by kicad-footprint-generator · KiCad file format 20260206
| Name | Last updated |
|---|---|
| docs | 16d ago |
| viewers | 16d ago |
| jcs20n65fh-220mf-hero.glb | 16d ago |
| jcs20n65fh-220mf-hero.overlay.json | 16d ago |
| jcs20n65fh-220mf.glb | 16d ago |
| jcs20n65fh-220mf.kicad_mod | 16d ago |
| jcs20n65fh-220mf.kicad_sym | 16d ago |
| jcs20n65fh-220mf.lbr | 16d ago |
| jcs20n65fh-220mf.step | 16d ago |
| package.json | 16d ago |
| page.json | 16d ago |
| README.md | 16d ago |
JCS20N65FH-220MF
Jilin Sino Microelectronics · MOSFETs · TO-220F-3
JCS20N65FH-220MF from Jilin Sino Microelectronics, in a TO-220F-3. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate, rated for a gate-source voltage of ±30 V, with a gate threshold voltage of 3.0 to 5.0 V. |
| 2 | D | passive | Drain, rated for 650 V drain-source voltage and 20 A continuous drain current at 25 °C (80 A pulsed). |
| 3 | S | passive | Source, the MOSFET source terminal, which is also the body-diode anode, with a 20 A maximum continuous diode forward current. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Jilin Sino Microelectronics |
| Package | TO-220F-3 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage (absolute maximum) | VDSS | 650 | V | 2 | |||
| Drain Current - continuous | ID | 20 | A | T=25℃ | 2 | ||
| Drain Current - continuous | ID | 12.5 | A | T=100℃ | 2 | ||
| Drain Current - pulse | IDM | 80 | A | note 1: pulse width limited by maximum junction temperature | 2 | ||
| Gate-Source Voltage | VGSS | -30 | 30 | V | 2 | ||
| Single Pulsed Avalanche Energy | EAS | 108 | mJ | note 2: L=0.5mH, IAS=20A, VDD=50V, RG=25Ω, starting TJ=25℃ | 2 | ||
| Avalanche Current | IAR | 20 | A | note 1 | 2 | ||
| Repetitive Avalanche Energy | EAR | 20.7 | mJ | note 1 | 2 | ||
| Peak Diode Recovery dv/dt | dv/dt | 50 | V/ns | note 3: ISD ≤9.5A, di/dt ≤300A/μs, VDD≤BVDSS, starting TJ=25℃ | 2 | ||
| Power Dissipation | PD | 62.2 | W | TC=25℃ | 2 | ||
| Power Dissipation derating | PD | 0.5 | W/℃ | derate above 25℃ | 2 | ||
| Operating and Storage Temperature Range | TJ，TSTG | -55 | 150 | ℃ | 2 | ||
| Maximum Lead Temperature for Soldering Purposes | TL | 300 | ℃ | 2 | |||
| Drain-Source Voltage | BVDSS | 650 | V | ID=250μA, VGS=0V | 3 | ||
| Zero Gate Voltage Drain Current | IDSS | 10 | μA | VDS=650V, VGS=0V, TC=25℃ | 3 | ||
| Zero Gate Voltage Drain Current | IDSS | 100 | μA | VDS=520V, TC=125℃ | 3 | ||
| Gate-body leakage current, forward | IGSSF | 100 | nA | VDS=0V, VGS=30V | 3 | ||
| Gate-body leakage current, reverse | IGSSR | -100 | nA | VDS=0V, VGS=-30V | 3 | ||
| Gate Threshold Voltage | VGS(th) | 3 | 5 | V | VDS = VGS, ID=250μA | 3 | |
| Static Drain-Source On-Resistance | RDS(ON) | 0.44 | 0.5 | Ω | VGS =10V, ID=10A | 3 | |
| Input capacitance | Ciss | 2550 | 4000 | pF | VDS=25V, VGS=0V, f=1.0MHZ | 3 | |
| Turn-On delay time | td(on) | 56 | 128 | ns | VDD=300V, ID=20A, RG=25Ω | 4 | |
| Turn-On rise time | tr | 140 | 270 | ns | VDD=300V, ID=20A, RG=25Ω | 4 | |
| Turn-Off delay time | td(off) | 80 | 350 | ns | VDD=300V, ID=20A, RG=25Ω | 4 | |
| Turn-Off Fall time | tf | 50 | 120 | ns | VDD=300V, ID=20A, RG=25Ω | 4 | |
| Total Gate Charge | Qg | 45 | 80 | nC | VDS=520V, ID=20A, VGS=10V | 4 | |
| Maximum Continuous Drain-Source Diode Forward Current | IS | 20 | A | 4 | |||
| Maximum Pulsed Drain-Source Diode Forward Current | ISM | 80 | A | 4 | |||
| Drain-Source Diode Forward Voltage | VSD | 1.45 | V | VGS=0V, IS=20A | 4 | ||
| Thermal Resistance, Junction to Case | Rth(j-c) | 2.01 | ℃/W | JCS20N65FH column | 4 | ||
| Thermal Resistance, Junction to Ambient | Rth(j-A) | 39.7 | ℃/W | JCS20N65FH column | 4 |
CAD (KiCad official)
- Symbol:
JCS20N65FH-220MF - Footprint:
Package_TO_SOT_THT:TO-220F-3_Vertical - 3D model: TO-220F-3 (KiCad packages3D, STEP)
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Jilin Sino Microelectronics datasheet (11 pp, sha256
4a463ef6d245cd1c, retrieved 2026-10-14, tier: lcsc) - Datasheet language: Chinese. Pin names, descriptions, and specs on this page were extracted and translated to English by ds2sf; the linked PDF is the manufacturer original.
- Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).