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IXYX120N120C3

Public Made by Adom

by adom

Littelfuse/IXYS IGBTs, TO-247-3. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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IXYX120N120C3

Littelfuse/IXYS · IGBTs · TO-247-3

IXYX120N120C3 from Littelfuse/IXYS, in a TO-247-3. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate; continuous gate-emitter voltage limit is ±20 V (±30 V transient), with VGE(th) of 3.0 V min to 5.0 V max at IC = 500 µA.
2 C passive Collector (also connected to the metal tab); VCES is 1200 V, IC110 is 120 A at TC = 110°C, and terminal current limit is 160 A.
3 E passive Emitter; main current return terminal, with terminal current limit of 160 A (ILRMS).

Key specifications

Parameter Value
Manufacturer Littelfuse/IXYS
Package TO-247-3
Category Triode/MOS Tube/Transistor
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Collector-Emitter Breakdown Voltage BVCES 1200 V IC = 250µA, VGE = 0V 1
Gate Threshold Voltage VGE(th) 3 5 V IC = 500µA, VCE = VGE 1
Collector Leakage Current ICES 25 µA VCE = VCES, VGE = 0V 1
Collector Leakage Current ICES 1.5 mA VCE = VCES, VGE = 0V, TJ = 150C 1
Gate Leakage Current IGES 100 nA VCE = 0V, VGE = 20V 1
Collector-Emitter Saturation Voltage VCE(sat) 2.55 3.2 V IC = IC110, VGE = 15V, Note 1 1
Collector-Emitter Saturation Voltage VCE(sat) 3.4 V IC = IC110, VGE = 15V, Note 1, TJ = 150C 1
Transconductance gfs 40 68 S IC = 60A, VCE = 10V, Note 1 2
Input Capacitance Cies 9850 pF VCE = 25V, VGE = 0V, f = 1MHz 2
Output Capacitance Coes 580 pF VCE = 25V, VGE = 0V, f = 1MHz 2
Reverse Transfer Capacitance Cres 218 pF VCE = 25V, VGE = 0V, f = 1MHz 2
Total Gate Charge Qg(on) 412 nC IC = IC110, VGE = 15V, VCE = 0.5 • VCES 2
Gate-Emitter Charge Qge 73 nC IC = IC110, VGE = 15V, VCE = 0.5 • VCES 2
Gate-Collector Charge Qgc 180 nC IC = IC110, VGE = 15V, VCE = 0.5 • VCES 2
Thermal Resistance Junction-to-Case RthJC 0.1 °C/W 2
Thermal Resistance Case-to-Sink RthCS 0.15 °C/W 2
Turn-on Delay Time td(on) 35 ns Inductive load, TJ = 25°C, IC = 100A, VGE = 15V, VCE = 0.5 • VCES, RG = 1Ω, Note 2 2
Current Rise Time tri 77 ns Inductive load, TJ = 25°C, IC = 100A, VGE = 15V, VCE = 0.5 • VCES, RG = 1Ω, Note 2 2
Turn-on Energy Eon 6.75 mJ Inductive load, TJ = 25°C, IC = 100A, VGE = 15V, VCE = 0.5 • VCES, RG = 1Ω, Note 2 2
Turn-off Delay Time td(off) 176 ns Inductive load, TJ = 25°C, IC = 100A, VGE = 15V, VCE = 0.5 • VCES, RG = 1Ω, Note 2 2
Current Fall Time tfi 96 ns Inductive load, TJ = 25°C, IC = 100A, VGE = 15V, VCE = 0.5 • VCES, RG = 1Ω, Note 2 2
Turn-off Energy Eoff 5.1 mJ Inductive load, TJ = 25°C, IC = 100A, VGE = 15V, VCE = 0.5 • VCES, RG = 1Ω, Note 2 2
Turn-on Delay Time td(on) 33 ns Inductive load, TJ = 150°C, IC = 100A, VGE = 15V, VCE = 0.5 • VCES, RG = 1Ω, Note 2 2
Current Rise Time tri 72 ns Inductive load, TJ = 150°C, IC = 100A, VGE = 15V, VCE = 0.5 • VCES, RG = 1Ω, Note 2 2
Turn-on Energy Eon 10.3 mJ Inductive load, TJ = 150°C, IC = 100A, VGE = 15V, VCE = 0.5 • VCES, RG = 1Ω, Note 2 2
Turn-off Delay Time td(off) 226 ns Inductive load, TJ = 150°C, IC = 100A, VGE = 15V, VCE = 0.5 • VCES, RG = 1Ω, Note 2 2
Current Fall Time tfi 120 ns Inductive load, TJ = 150°C, IC = 100A, VGE = 15V, VCE = 0.5 • VCES, RG = 1Ω, Note 2 2
Turn-off Energy Eoff 7.2 mJ Inductive load, TJ = 150°C, IC = 100A, VGE = 15V, VCE = 0.5 • VCES, RG = 1Ω, Note 2 2
Collector-Emitter Voltage VCES 1200 V TJ = 25°C to 175°C 1
Collector-Gate Voltage VCGR 1200 V TJ = 25°C to 175°C, RGE = 1MΩ 1
Gate-Emitter Voltage Continuous VGES -20 20 V Continuous 1
Gate-Emitter Voltage Transient VGEM -30 30 V Transient 1
Collector Current IC25 240 A TC = 25°C (Chip Capability) 1
Terminal Current Limit ILRMS 160 A Terminal Current Limit 1
Collector Current IC110 120 A TC = 110°C 1
Pulsed Collector Current ICM 700 A TC = 25°C, 1ms 1
Avalanche Current IA 60 A TC = 25°C 1
Avalanche Energy EAS 2 J TC = 25°C 1
Reverse Bias Safe Operating Area SSOA (RBSOA) 240 A VGE = 15V, TVJ = 150°C, RG = 1Ω, Clamped Inductive Load, VCE ≤ VCES 1
Power Dissipation PC 1500 W TC = 25°C 1
Junction Temperature TJ -55 175 °C 1
Maximum Junction Temperature TJM 175 °C 1
Storage Temperature Tstg -55 175 °C 1
Maximum Lead Temperature for Soldering TL 300 °C Maximum Lead Temperature for Soldering 1
Soldering Temperature TSOLD 260 °C 1.6 mm (0.062in.) from Case for 10s 1
Mounting Force FC 20 120 N PLUS247 1

CAD (KiCad official)

  • Symbol: IXYX120N120C3
  • Footprint: Package_TO_SOT_THT:TO-247-3_Vertical
  • 3D model: TO-247-3 (KiCad packages3D, STEP)
  • 3D model files: ixyx120n120c3-etched.step / ixyx120n120c3-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); ixyx120n120c3.step / ixyx120n120c3.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Littelfuse/IXYS datasheet (7 pp, sha256 6109f4fa505308fc, retrieved 2026-10-26, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF