component
IXTP450P2
Public Made by Adomby adom
IXYS MOSFETs, TO-220-3. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownIXTP450P2
IXYS · MOSFETs · TO-220-3
IXTP450P2 from IXYS, in a TO-220-3. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate; VGSS continuous ±30 V, transient VGSM ±40 V, threshold VGS(th) 2.5 to 4.5 V at ID = 250μA. |
| 2 | D | passive | Drain (also connected to the tab); VDSS 500 V, ID25 16 A, IDM 48 A pulsed. |
| 3 | S | passive | Source; continuous diode current IS 16 A, RDS(on) ≤ 330 mΩ at VGS = 10 V. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | IXYS |
| Package | TO-220-3 |
| Category | Triode/MOS Tube/Transistor |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDSS | 500 | V | TJ = 25°C to 150°C | 1 | ||
| Drain-Gate Voltage | VDGR | 500 | V | TJ = 25°C to 150°C, RGS = 1MΩ | 1 | ||
| Gate-Source Voltage Continuous | VGSS | -30 | 30 | V | Continuous | 1 | |
| Gate-Source Voltage Transient | VGSM | -40 | 40 | V | Transient | 1 | |
| Drain Current Continuous | ID25 | 16 | A | TC = 25°C | 1 | ||
| Drain Current Pulsed | IDM | 48 | A | TC = 25°C, Pulse Width Limited by TJM | 1 | ||
| Avalanche Current | IA | 16 | A | TC = 25°C | 1 | ||
| Avalanche Energy | EAS | 750 | mJ | TC = 25°C | 1 | ||
| Maximum dv/dt | dv/dt | 10 | V/ns | IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 150°C | 1 | ||
| Power Dissipation | PD | 300 | W | TC = 25°C | 1 | ||
| Operating Junction Temperature | TJ | -55 | 150 | °C | 1 | ||
| Maximum Junction Temperature | TJM | 150 | °C | 1 | |||
| Storage Temperature | Tstg | -55 | 150 | °C | 1 | ||
| Maximum Lead Temperature for Soldering | TL | 300 | °C | 1 | |||
| Plastic Body Soldering Temperature | TSOLD | 260 | °C | Plastic Body for 10s | 1 | ||
| Drain-Source Breakdown Voltage | BVDSS | 500 | V | VGS = 0V, ID = 250μA | 1 | ||
| Gate Threshold Voltage | VGS(th) | 2.5 | 4.5 | V | VDS = VGS, ID = 250μA | 1 | |
| Gate Leakage Current | IGSS | -100 | 100 | nA | VGS = ± 30V, VDS = 0V | 1 | |
| Drain Leakage Current | IDSS | 5 | μA | VDS = VDSS, VGS = 0V | 1 | ||
| Drain Leakage Current at 125°C | IDSS | 25 | μA | VDS = VDSS, VGS = 0V, TJ = 125°C | 1 | ||
| Drain-Source On-Resistance | RDS(on) | 330 | mΩ | VGS = 10V, ID = 0.5 • ID25, Note 1 | 1 | ||
| Transconductance | gfs | 12 | 20 | S | VDS = 20V, ID = 0.5 • ID25, Note 1 | 2 | |
| Thermal Resistance Junction to Case | RthJC | 0.42 | °C/W | 2 | |||
| Continuous Source Current | IS | 16 | A | VGS = 0V | 2 | ||
| Pulsed Source Current | ISM | 64 | A | Repetitive, Pulse Width Limited by TJM | 2 | ||
| Diode Forward Voltage | VSD | 1.3 | V | IF = IS, VGS = 0V, Note 1 | 2 | ||
| Reverse Recovery Time | trr | 400 | ns | IF = 16A, -di/dt = 100A/μs, VR = 100V, VGS = 0V | 2 | ||
| Input Capacitance | Ciss | 2280 | pF | VGS = 0V, VDS = 25V, f = 1MHz | 2 | ||
| Output Capacitance | Coss | 257 | pF | VGS = 0V, VDS = 25V, f = 1MHz | 2 | ||
| Reverse Transfer Capacitance | Crss | 30 | pF | VGS = 0V, VDS = 25V, f = 1MHz | 2 | ||
| Turn-On Delay Time | td(on) | 16 | ns | Resistive switching, VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25, RG = 10Ω (External) | 2 | ||
| Rise Time | tr | 10 | ns | Resistive switching, VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25, RG = 10Ω (External) | 2 | ||
| Turn-Off Delay Time | td(off) | 50 | ns | Resistive switching, VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25, RG = 10Ω (External) | 2 | ||
| Fall Time | tf | 18 | ns | Resistive switching, VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25, RG = 10Ω (External) | 2 | ||
| Total Gate Charge | Qg(on) | 43 | nC | VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 | 2 | ||
| Gate-Source Charge | Qgs | 18 | nC | VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 | 2 | ||
| Gate-Drain Charge | Qgd | 11 | nC | VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 | 2 | ||
| Case-to-Sink Thermal Resistance TO-220 | RthCS | 0.5 | °C/W | TO-220 | 2 |
CAD (KiCad official)
- Symbol:
IXTP450P2 - Footprint:
Package_TO_SOT_THT:TO-220-3_Vertical - 3D model: TO-220-3 (KiCad packages3D, STEP)
- 3D model files:
ixtp450p2-etched.step/ixtp450p2-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);ixtp450p2.step/ixtp450p2.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: IXYS datasheet (6 pp, sha256
681eff7d580fb6ee, retrieved 2026-10-31, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).