component
IXTP3N120
Public Made by Adomby adom
Littelfuse IXYS MOSFETs, TO-220AB-3. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
Generated by kicad-footprint-generator · KiCad file format 20260206
| Name | Last updated |
|---|---|
| docs | 16d ago |
| viewers | 16d ago |
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| ixtp3n120-etched.step | 16d ago |
| ixtp3n120-hero.glb | 16d ago |
| ixtp3n120-hero.overlay.json | 16d ago |
| ixtp3n120.glb | 16d ago |
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IXTP3N120
Littelfuse IXYS · MOSFETs · TO-220AB-3
IXTP3N120 from Littelfuse IXYS, in a TO-220AB-3. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | Gate | input | Gate control terminal, with a maximum continuous gate-source voltage VGSS of 20 V and a transient VGSM of 30 V. |
| 2 | Drain | passive | Drain terminal, rated for VDSS of 1200 V and continuous drain current ID25 of 3 A at TC = 25C; the drain is also connected to the metal tab. |
| 3 | Source | passive | Source terminal, the reference for gate drive, with a source-drain diode continuous current IS of 3 A at VGS = 0 V. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Littelfuse IXYS |
| Package | TO-220AB-3 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-source voltage | VDSS | 1200 | V | TJ = 25C to 150C | 1 | ||
| Drain-gate voltage | VDGR | 1200 | V | TJ = 25C to 150C, RGS = 1M | 1 | ||
| Gate-source voltage, continuous | VGSS | 20 | V | Continuous | 1 | ||
| Gate-source voltage, transient | VGSM | 30 | V | Transient | 1 | ||
| Continuous drain current | ID25 | 3 | A | TC = 25C | 1 | ||
| Pulsed drain current | IDM | 12 | A | TC = 25C, Pulse Width Limited by TJM | 1 | ||
| Avalanche current | IA | 3 | A | TC = 25C | 1 | ||
| Single pulse avalanche energy | EAS | 700 | mJ | TC = 25C | 1 | ||
| Peak diode recovery dv/dt | dv/dt | 5 | V/ns | IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 150C | 1 | ||
| Total power dissipation | PD | 200 | W | TC = 25C | 1 | ||
| Operating junction temperature | TJ | -55 | 150 | °C | 1 | ||
| Maximum junction temperature | TJM | 150 | °C | 1 | |||
| Storage temperature | Tstg | -55 | 150 | °C | 1 | ||
| Maximum lead temperature for soldering | TL | 300 | °C | 1 | |||
| Package soldering temperature | TSOLD | 260 | °C | 1.6 mm (0.062in.) from Case for 10s | 1 | ||
| Drain-source breakdown voltage | BVDSS | 1200 | V | VGS = 0V, ID = 1mA | 1 | ||
| Gate threshold voltage | VGS(th) | 2.5 | 5 | V | VDS = VGS, ID = 250µA | 1 | |
| Gate-source leakage current | IGSS | 100 | nA | VGS = 20V, VDS = 0V | 1 | ||
| Zero gate voltage drain current | IDSS | 25 | µA | VDS = VDSS, VGS = 0V | 1 | ||
| Zero gate voltage drain current at high temperature | IDSS | 1 | mA | TJ = 125C | 1 | ||
| Static drain-source on resistance | RDS(on) | 4.5 | Ω | VGS = 10V, ID = 0.5 • ID25, Note 1 | 1 | ||
| Forward transconductance | gfs | 1.5 | 2.6 | S | VDS = 20V, ID = 0.5 • ID25, Note 1 | 2 | |
| Input capacitance | Ciss | 1100 | 1350 | pF | 2 | ||
| Output capacitance | Coss | 110 | 135 | pF | VGS = 0V, VDS = 25V, f = 1MHz | 2 | |
| Reverse transfer capacitance | Crss | 40 | 60 | pF | 2 | ||
| Continuous source current | IS | 3 | A | VGS = 0V | 2 | ||
| Repetitive pulsed source current | ISM | 12 | A | Repetitive, Pulse Width Limited by TJM | 2 | ||
| Diode forward voltage | VSD | 1.5 | V | IF = IS, VGS = 0V, Note 1 | 2 | ||
| Junction-to-case thermal resistance | RthJC | 0.62 | °C/W | 2 | |||
| Turn-on delay time | td(on) | 17 | ns | VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25, RG = 4.7 (External) | 2 | ||
| Rise time | tr | 15 | ns | VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25, RG = 4.7 (External) | 2 | ||
| Turn-off delay time | td(off) | 32 | ns | VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25, RG = 4.7 (External) | 2 | ||
| Fall time | tf | 18 | ns | VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25, RG = 4.7 (External) | 2 | ||
| Total gate charge | Qg(on) | 42 | nC | 2 | |||
| Gate-source charge | Qgs | 8 | nC | VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 | 2 | ||
| Gate-drain charge | Qgd | 21 | nC | VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 | 2 | ||
| Reverse recovery time | trr | 700 | ns | IF = 3A, VGS = 0V, -di/dt = 100A/µs, VR = 100V | 2 | ||
| Case-to-sink thermal resistance, TO-220 | RthCS | 0.5 | °C/W | TO-220 | 2 |
CAD (KiCad official)
- Symbol:
IXTP3N120 - Footprint:
Package_TO_SOT_THT:TO-220-3_Vertical - 3D model: TO-220AB-3 (KiCad packages3D, STEP)
- 3D model files:
ixtp3n120-etched.step/ixtp3n120-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);ixtp3n120.step/ixtp3n120.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Littelfuse IXYS datasheet (6 pp, sha256
d1ba3caab2f6ea10, retrieved 2026-10-15, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).