component
IXTP160N10T-VB
Public Made by Adomby adom
VBsemi Elec MOSFETs, TO-220AB. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
Open in new tab ↗
Loads when you scroll to it. Unloads after 5 minutes in the background.
Symbol & Footprint
Schematic Symbol
Open full view ↗Loads when you scroll to it. Unloads after 5 minutes in the background.
PCB Footprint
Open full view ↗Loads when you scroll to it. Unloads after 5 minutes in the background.
Datasheet
Open in new tab ↗Loads when you scroll to it. Unloads after 5 minutes in the background.
README
markdownIXTP160N10T-VB
VBsemi Elec · MOSFETs · TO-220AB
IXTP160N10T-VB from VBsemi Elec, in a TO-220AB. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate of the N-channel MOSFET, with a maximum gate-source voltage of ±20 V. |
| 2 | D | passive | Drain, connected to the mounting tab, rated for VDS of 100 V and ID of 120 A at TC = 25 °C (package limited). |
| 3 | S | passive | Source of the N-channel MOSFET, with the body diode between source and drain. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | VBsemi Elec |
| Package | TO-220AB |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS | 100 | V | 1 | |||
| Gate-Source Voltage | VGS | -20 | 20 | V | 1 | ||
| Continuous Drain Current | ID | 120 | A | TC = 25 °C, TJ = 150 °C | 1 | ||
| Continuous Drain Current | ID | 90 | A | TC = 70 °C | 1 | ||
| Pulsed Drain Current | IDM | 480 | A | t = 100 μs | 1 | ||
| Avalanche Current | IAS | 73 | A | 1 | |||
| Single Avalanche Energy | EAS | 266 | mJ | L = 0.1 mH | 1 | ||
| Maximum Power Dissipation | PD | 370 | W | TC = 25 °C | 1 | ||
| Maximum Power Dissipation | PD | 120 | W | TC = 125 °C | 1 | ||
| Operating Junction and Storage Temperature Range | TJ, Tstg | -55 | 175 | °C | 1 | ||
| Junction-to-Ambient (PCB Mount) | RthJA | 40 | °C/W | PCB mount | 1 | ||
| Junction-to-Case (Drain) | RthJC | 0.4 | °C/W | 1 | |||
| Drain-Source Breakdown Voltage | VDS | 100 | V | VGS = 0 V, ID = 250 μA | 2 | ||
| Gate Threshold Voltage | VGS(th) | 2.5 | 4 | V | VDS = VGS, ID = 250 μA | 2 | |
| Gate-Body Leakage | IGSS | -250 | 250 | nA | VDS = 0 V, VGS = ±20 V | 2 | |
| Zero Gate Voltage Drain Current | IDSS | 1 | μA | VDS = 100 V, VGS = 0 V | 2 | ||
| Zero Gate Voltage Drain Current | IDSS | 150 | μA | VDS = 100 V, VGS = 0 V, TJ = 125 °C | 2 | ||
| Zero Gate Voltage Drain Current | IDSS | 5 | mA | VDS = 100 V, VGS = 0 V, TJ = 175 °C | 2 | ||
| On-State Drain Current | ID(on) | 120 | A | VDS ≥ 10 V, VGS = 10 V | 2 | ||
| Gate Resistance | Rg | 0.6 | 3.3 | 6.6 | Ω | f = 1 MHz | 2 |
| Total Gate Charge | Qg | 120 | nC | VDS = 50 V, VGS = 10 V, ID = 20 A | 2 | ||
| Turn-On Delay Time | td(on) | 15 | 30 | ns | VDD = 50 V, RL = 5 Ω, ID 10 A, VGEN = 10 V, Rg = 1 Ω | 2 | |
| Rise Time | tr | 22 | 40 | ns | VDD = 50 V, RL = 5 Ω, ID 10 A, VGEN = 10 V, Rg = 1 Ω | 2 | |
| Turn-Off Delay Time | td(off) | 55 | 100 | ns | VDD = 50 V, RL = 5 Ω, ID 10 A, VGEN = 10 V, Rg = 1 Ω | 2 | |
| Fall Time | tf | 15 | 30 | ns | VDD = 50 V, RL = 5 Ω, ID 10 A, VGEN = 10 V, Rg = 1 Ω | 2 | |
| Pulsed Current | ISM | 480 | A | TC = 25 °C | 2 | ||
| Forward Voltage | VSD | 0.8 | 1.5 | V | IF = 10 A, VGS = 0 V | 2 |
CAD (KiCad official)
- Symbol:
IXTP160N10T-VB - Footprint:
Package_TO_SOT_THT:TO-220-3_Vertical - 3D model: TO-220AB (KiCad packages3D, STEP)
- 3D model files:
ixtp160n10t-vb-etched.step/ixtp160n10t-vb-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);ixtp160n10t-vb.step/ixtp160n10t-vb.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: VBsemi Elec datasheet (8 pp, sha256
1a137d2de15fc837, retrieved 2026-10-16, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).