# IXTK180N15P

**IXYS** · MOSFETs · TO-264-3

IXTK180N15P from IXYS, in a TO-264-3. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

## Pinout

| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate; gate-source voltage is rated ±20 V continuous and ±30 V transient, with VGS(th) of 2.5 V min to 5.0 V max at ID = 500 µA. |
| 2 | D | passive | Drain, internally connected to the TAB; BVDSS is 150 V min at ID = 250 µA and ID25 is 180 A at TC = 25 °C (75 A external lead current limit). |
| 3 | S | passive | Source; continuous source-drain diode current IS is 180 A (pulsed ISM 380 A) with RDS(on) of 10 mΩ max at VGS = 10 V. |

## Key specifications

| Parameter | Value |
|---|---|
| Manufacturer | IXYS |
| Package | TO-264-3 |
| Category | Transistors |
| Pins | 3 |

## Electrical characteristics

Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).

| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-source breakdown voltage | BVDSS | 150 |  |  | V | VGS = 0 V, ID = 250 µA | 1 |
| Gate threshold voltage | VGS(th) | 2.5 |  | 5 | V | VDS = VGS, ID = 500µA | 1 |
| Gate-source leakage current | IGSS | -200 |  | 200 | nA | VGS = ±20 VDC, VDS = 0 | 1 |
| Drain leakage current | IDSS |  |  | 25 | µA | VDS = VDSS, VGS = 0 V | 1 |
| Drain leakage current at 150 °C | IDSS |  |  | 250 | µA | VDS = VDSS, VGS = 0 V, TJ = 150° C | 1 |
| Static drain-source on-resistance | RDS(on) |  |  | 10 | mΩ | VGS = 10 V, ID = 0.5 ID25, pulse test | 1 |
| Drain-source voltage | VDSS |  |  | 100 | V | TJ = 25° C to 175° C | 1 |
| Drain-gate voltage | VDGR |  |  | 100 | V | TJ = 25° C to 175° C; RGS = 1 MΩ | 1 |
| Gate-source voltage continuous | VDSS | -20 |  | 20 | V | Continuous | 1 |
| Gate-source voltage transient | VGSM | -30 |  | 30 | V | Transient | 1 |
| Continuous drain current | ID25 |  |  | 180 | A | TC = 25° C | 1 |
| RMS drain current | ID(RMS) |  |  | 75 | A | External lead current limit | 1 |
| Pulsed drain current | IDM |  |  | 380 | A | TC = 25° C, pulse width limited by TJM | 1 |
| Avalanche current | IAR |  |  | 60 | A | TC = 25° C | 1 |
| Repetitive avalanche energy | EAR |  |  | 100 | mJ | TC = 25° C | 1 |
| Single pulse avalanche energy | EAS |  |  | 4 | J | TC = 25° C | 1 |
| Peak diode recovery dv/dt | dv/dt |  |  | 10 | V/ns | IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS, TJ ≤ 150° C, RG = 4 Ω | 1 |
| Power dissipation | PD |  |  | 800 | W | TC = 25° C | 1 |
| Junction temperature | TJ | -55 |  | 175 | °C |  | 1 |
| Maximum junction temperature | TJM |  |  | 175 | °C |  | 1 |
| Storage temperature | Tstg | -55 |  | 150 | °C |  | 1 |
| Lead temperature | TL |  |  | 300 | °C | 1.6 mm (0.062 in.) from case for 10 s | 1 |
| Soldering temperature | TSOLD |  |  | 260 | °C | Plastic body for 10 s | 1 |
| Forward transconductance | gfs | 55 | 86 |  | S | VDS= 10 V; ID = 0.5 ID25, pulse test | 2 |
| Junction-to-case thermal resistance | RthJC |  |  | 0.18 | ° C/W |  | 2 |
| Case-to-sink thermal resistance | RthCS |  | 0.15 |  | ° C/W |  | 2 |
| Continuous source current | IS |  |  | 180 | A | VGS = 0 V | 2 |
| Pulsed source current | ISM |  |  | 380 | A | Repetitive | 2 |
| Diode forward voltage | VSD |  |  | 1.5 | V | IF = IS, VGS = 0 V | 2 |
| Input capacitance | Ciss |  | 7000 |  | pF | VGS = 0 V, VDS = 25 V, f = 1 MHz | 2 |
| Output capacitance | Coss |  | 2250 |  | pF | VGS = 0 V, VDS = 25 V, f = 1 MHz | 2 |
| Reverse transfer capacitance | Crss |  | 515 |  | pF | VGS = 0 V, VDS = 25 V, f = 1 MHz | 2 |
| Turn-on delay time | td(on) |  | 30 |  | ns | VGS = 10 V, VDS = 0.5 VDSS, ID = 60 A, RG = 3.3 Ω (External) | 2 |
| Rise time | tr |  | 32 |  | ns | VGS = 10 V, VDS = 0.5 VDSS, ID = 60 A, RG = 3.3 Ω (External) | 2 |
| Turn-off delay time | td(off) |  | 150 |  | ns | VGS = 10 V, VDS = 0.5 VDSS, ID = 60 A, RG = 3.3 Ω (External) | 2 |
| Fall time | tf |  | 36 |  | ns | VGS = 10 V, VDS = 0.5 VDSS, ID = 60 A, RG = 3.3 Ω (External) | 2 |
| Total gate charge | Qg(on) |  | 240 |  | nC | VGS= 10 V, VDS = 0.5 VDSS, ID = 0.5 ID25 | 2 |
| Gate-source charge | Qgs |  | 55 |  | nC | VGS= 10 V, VDS = 0.5 VDSS, ID = 0.5 ID25 | 2 |
| Gate-drain charge | Qgd |  | 140 |  | nC | VGS= 10 V, VDS = 0.5 VDSS, ID = 0.5 ID25 | 2 |
| Reverse recovery time | trr |  | 150 |  | ns | IF = 25 A, -di/dt = 100 A/µs, VR = 100 V, VGS = 0 V | 2 |
| Reverse recovery charge | QRM |  | 2.3 |  | µC | IF = 25 A, -di/dt = 100 A/µs, VR = 100 V, VGS = 0 V | 2 |

## CAD (KiCad official)

- Symbol: `IXTK180N15P`
- Footprint: `Package_TO_SOT_THT:TO-264-3_Vertical`
- 3D model: TO-264-3 (KiCad packages3D, STEP)
- 3D model files: `ixtk180n15p-etched.step` / `ixtk180n15p-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `ixtk180n15p.step` / `ixtk180n15p.glb` are the bare package body.

## Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

- **Datasheet:** [IXYS datasheet](docs/ixtk180n15p-datasheet.pdf) (5 pp, sha256 `85900dbf8dea410a`, retrieved 2026-10-27, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-sonnet-5-5` (text), consensus `claude-sonnet-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).

[Datasheet PDF](docs/ixtk180n15p-datasheet.pdf)