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Contents

README

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IXTH52P10P

IXYS · MOSFETs · TO-247

IXTH52P10P from IXYS, in a TO-247. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 Gate input Gate is rated for continuous gate-source voltage VGSS of ±20 V, with transient VGSM of ±30 V.
2 Drain passive Drain is rated VDSS = -100 V with continuous ID25 = -52 A at TC = 25°C, and is electrically connected to the tab.
3 Source passive Source is the reference terminal for the device, with RDS(on) ≤ 50 mΩ specified at VGS = -10 V.

Key specifications

Parameter Value
Manufacturer IXYS
Package TO-247
Category Transistors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-source voltage VDSS -100 V TJ = 25°C to 150°C 1
Drain-gate voltage VDGR -100 V TJ = 25°C to 150°C, RGS = 1MΩ 1
Gate-source voltage continuous VGSS -20 20 V Continuous 1
Gate-source voltage transient VGSM -30 30 V Transient 1
Continuous drain current ID25 -52 A TC = 25°C 1
Pulsed drain current IDM -130 A TC = 25°C, Pulse Width Limited by TJM 1
Avalanche current IA -52 A TC = 25°C 1
Single pulse avalanche energy EAS 1.5 J TC = 25°C 1
Peak diode recovery dv/dt dv/dt 10 V/ns IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 150°C 1
Total power dissipation PD 300 W TC = 25°C 1
Operating junction temperature TJ -55 150 °C 1
Maximum junction temperature TJM 150 °C 1
Storage temperature Tstg -55 150 °C 1
Lead temperature TL 300 °C 1.6mm (0.062 in.) from Case for 10s 1
Plastic body soldering temperature TSOLD 260 °C Plastic body for 10s 1
Gate threshold voltage VGS(th) -2 -4 V VDS = VGS, ID = -250μA 1
Gate-source leakage current IGSS -100 100 nA VGS = ± 20V, VDS = 0V 1
Zero gate voltage drain current IDSS -10 μA VDS = VDSS, VGS = 0V 1
Zero gate voltage drain current at high temperature IDSS -150 μA TJ = 125°C 1
Drain-source on-state resistance RDS(on) 50 mΩ VGS = -10V, ID = 0.5 • ID25, Note 1 1
Drain-source breakdown voltage BVDSS -100 V VGS = 0V, ID = - 250μA 1
Forward transconductance gfs 12 20 S VDS = -10V, ID = 0.5 • ID25, Note 1 2
Continuous source current IS -52 A VGS = 0V 2
Pulsed source current ISM -200 A Repetitive, Pulse Width Limited by TJM 2
Forward voltage drop of intrinsic diode VSD -3.5 V IF = -26A, VGS = 0V, Note 1 2
Junction-to-case thermal resistance RthJC 0.42 °C/W 2
Case-to-sink thermal resistance (TO-247) RthCS 0.21 °C/W (TO-247) 2

CAD (KiCad official)

  • Symbol: IXTH52P10P
  • Footprint: Package_TO_SOT_THT:TO-247-3_Vertical
  • 3D model: TO-247 (KiCad packages3D, STEP)
  • 3D model files: ixth52p10p-etched.step / ixth52p10p-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); ixth52p10p.step / ixth52p10p.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: IXYS datasheet (7 pp, sha256 5e25ae061d6b4514, retrieved 2026-10-27, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF