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IXTH22N50P

IXYS · MOSFETs · TO-247

IXTH22N50P from IXYS, in a TO-247. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 Gate input Gate terminal; VGS continuous is ±30 V and VGS(th) is 3.0 to 5.5 V at ID = 250 µA.
2 Drain passive Drain terminal; the device is rated for VDSS 500 V and ID25 22 A at TC = 25°C.
3 Source passive Source terminal; it is the reference for gate drive and the return path for drain current.

Key specifications

Parameter Value
Manufacturer IXYS
Package TO-247
Category Triode/MOS Tube/Transistor
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-source voltage VDSS 500 V TJ = 25°C to 150°C 1
Drain-gate voltage VDGR 500 V TJ = 25°C to 150°C; RGS = 1 MΩ 1
Gate-source voltage continuous VGS -30 30 V Continuous 1
Gate-source voltage transient VGSM -40 40 V Transient 1
Continuous drain current ID25 22 A TC = 25°C 1
Pulsed drain current IDM 66 A TC = 25°C, pulse width limited by TJM 1
Avalanche current IAR 22 A TC = 25°C 1
Avalanche energy repetitive EAR 30 mJ TC = 25°C 1
Single pulse avalanche energy EAS 750 mJ TC = 25°C 1
Peak diode recovery dv/dt dv/dt 10 V/ns IS ≤ IDM, di/dt ≤ 100 A/μs, VDD ≤ VDSS, TJ ≤ 150°C, RG = 10 Ω 1
Total power dissipation PD 350 W TC = 25°C 1
Operating junction temperature TJ -55 150 °C 1
Maximum junction temperature TJM 150 °C 1
Storage temperature Tstg -55 150 °C 1
Maximum lead temperature for soldering TL 300 °C 1.6 mm (0.062 in.) from case for 10 s 1
Plastic body soldering temperature TSOLD 260 °C Plastic body for 10 s 1
Drain-source breakdown voltage BVDSS 500 V VGS = 0 V, ID = 250 μA 1
Gate threshold voltage VGS(th) 3 5.5 V VDS = VGS, ID = 250μA 1
Gate leakage current IGSS -10 10 nA VGS = ±30 VDC, VDS = 0 1
Zero gate voltage drain current IDSS 5 μA VDS = VDSS 1
Zero gate voltage drain current at high temperature IDSS 50 μA VGS = 0 V, TJ = 125°C 1
Static drain-source on-resistance RDS(on) 270 mΩ VGS = 10 V, ID = 0.5 ID25 1

CAD (KiCad official)

  • Symbol: IXTH22N50P
  • Footprint: Package_TO_SOT_THT:TO-247-3_Vertical
  • 3D model: TO-247 (KiCad packages3D, STEP)
  • 3D model files: ixth22n50p-etched.step / ixth22n50p-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); ixth22n50p.step / ixth22n50p.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: IXYS datasheet (5 pp, sha256 6d923aaa7e90e3fa, retrieved 2026-10-27, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF