component
IXTH1N200P3
Public Made by Adomby adom
Tokmas Silicon Carbide Field Effect Transistor (MOSFET), TO-247-3. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
Open in new tab ↗
Loads when you scroll to it. Unloads after 5 minutes in the background.
Symbol & Footprint
Schematic Symbol
Open full view ↗Loads when you scroll to it. Unloads after 5 minutes in the background.
PCB Footprint
Open full view ↗Loads when you scroll to it. Unloads after 5 minutes in the background.
Datasheet
Open in new tab ↗Loads when you scroll to it. Unloads after 5 minutes in the background.
README
markdownIXTH1N200P3
Tokmas · Silicon Carbide Field Effect Transistor (MOSFET) · TO-247-3
IXTH1N200P3 from Tokmas, in a TO-247-3. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | Gate | input | Gate control input; recommended static gate-source voltage -4/+18 V, absolute maximum AC -10/+25 V. |
| 2 | Drain | passive | Drain terminal rated for 2200 V drain-source voltage and 8.7 A continuous current at TC=25°C. |
| 3 | Power Source | passive | Power source terminal of the MOSFET, carrying the main current return path (body diode continuous current 8 A). |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Tokmas |
| Package | TO-247-3 |
| Category | Silicon Carbide (SiC) Devices |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDSmax | 2200 | V | VGS = 0V, ID = 100μA | 2 | ||
| Gate-Source voltage (AC) | VGSmax | -10 | 25 | V | AC (f > 1 Hz) | 2 | |
| Recommended Gate-Source Voltage | VGSop | -4 | 18 | V | Static | 2 | |
| Continuous Drain current (25°C) | ID | 8.7 | A | VGS = 18V, TC = 25°C | 2 | ||
| Continuous Drain current (100°C) | ID | 6 | A | VGS = 18V, TC = 100°C | 2 | ||
| Pulsed Drain Current (1 ms) | ID,pulse | 9 | A | Pulse with tp limited by Tjmax at 1 ms | 2 | ||
| Pulsed Drain Current (100 μs) | ID,pulse | 16 | A | Pulse with tp limited by Tjmax at 100 μs | 2 | ||
| Power Dissipation | PD | 94 | W | TC = 25°C, Tj = 175°C | 2 | ||
| Operating junction temperature | Tj | -55 | 175 | °C | 2 | ||
| Storage temperature | Tstg | -55 | 175 | °C | 2 | ||
| Thermal resistance, Junction to Case | Rth(jc) | 1.6 | K/W | 2 | |||
| Thermal resistance, Junction to Ambient | Rth(ja) | 40 | K/W | 2 | |||
| Drain-Source Breakdown voltage | V(BR)DSS | 2200 | V | VGS = 0V, ID = 100μA | 3 | ||
| Gate Threshold voltage | VGS(th) | 2.8 | V | VGS = VDS, ID = 0.5mA | 3 | ||
| Gate Threshold voltage (175°C) | VGS(th) | 2 | V | VGS = VDS, ID = 0.5mA, Tj=175°C | 3 | ||
| Gate-Source Leakage current | IGSS | 250 | nA | VGS = 18V, VDS = 0V | 3 | ||
| Zero Gate Voltage Drain Current | IDSS | 1 | 50 | μA | VDS = 2200V, VGS = 0V, Tj = 25°C | 3 | |
| Drain-Source On-state Resistance (18V) | RDS(on) | 0.9 | Ω | VGS = 18V, ID = 2A | 3 | ||
| Drain-Source On-state Resistance (20V) | RDS(on) | 0.8 | 1.4 | Ω | VGS = 20V, ID = 2A | 3 | |
| Drain-Source On-state Resistance (175°C) | RDS(on) | 2 | Ω | VGS = 20V, ID = 2A, Tj = 175°C | 3 | ||
| Transconductance | gfs | 1 | S | VDS = 18V, ID = 2A | 3 | ||
| Transconductance (175°C) | gfs | 0.8 | S | VDS = 18V, ID = 2A, Tj = 175°C | 3 | ||
| Gate to Source Charge | QGS | 1.7 | nC | VDS = 1200V, ID = 2A, VGS = -4V/18V | 4 | ||
| Gate to Drain Charge | QGD | 9 | nC | VDS = 1200V, ID = 2A, VGS = -4V/18V | 4 | ||
| Total Gate Charge | QG | 15 | nC | VDS = 1200V, ID = 2A, VGS = -4V/18V | 4 | ||
| Input Capacitance | Ciss | 168 | pF | VGS = 0V, VDS = 1000V, f =1 MHz, VAC = 25mV | 4 | ||
| Output Capacitance | Coss | 13 | pF | VGS = 0V, VDS = 1000V, f =1 MHz, VAC = 25mV | 4 | ||
| Reverse Transfer Capacitance | Crss | 2.7 | pF | VGS = 0V, VDS = 1000V, f =1 MHz, VAC = 25mV | 4 | ||
| Internal Gate Resistance | RG(int) | 6 | Ω | f=1 MHz, VAC = 25mV | 4 | ||
| Diode Forward Voltage | VSD | 3.7 | V | VGS = -4V, ISD = 1A | 5 | ||
| Diode Forward Voltage (175°C) | VSD | 3.3 | V | VGS = -4V, ISD = 1A, Tj = 175°C | 5 | ||
| Continuous Diode Forward Current | IS | 8 | A | VGS = -4V, TC = 25°C | 5 | ||
| Diode pulse Current | IS, pulse | 9 | A | VGS = -5V, pulse width tp limited by Tjmax | 5 |
CAD (KiCad official)
- Symbol:
IXTH1N200P3 - Footprint:
Package_TO_SOT_THT:TO-247-3_Vertical - 3D model: TO-247-3 (KiCad packages3D, STEP)
- 3D model files:
ixth1n200p3-etched.step/ixth1n200p3-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);ixth1n200p3.step/ixth1n200p3.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Tokmas datasheet (11 pp, sha256
c8db0cfcc970db93, retrieved 2026-10-23, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).