component
IXTH15N50L2
Public Made by Adomby adom
IXYS MOSFETs, TO-247. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
Generated by kicad-footprint-generator · KiCad file format 20260206
| Name | Last updated |
|---|---|
| docs | 12d ago |
| viewers | 12d ago |
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| ixth15n50l2-etched.step | 12d ago |
| ixth15n50l2-hero.glb | 12d ago |
| ixth15n50l2-hero.overlay.json | 12d ago |
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| ixth15n50l2.lbr | 12d ago |
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| README.md | 12d ago |
IXTH15N50L2
IXYS · MOSFETs · TO-247
IXTH15N50L2 from IXYS, in a TO-247. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | Gate | input | Gate of the MOSFET; continuous gate-source voltage is limited to ±20 V, with transient ±30 V (VGSS, VGSM). |
| 2 | Drain | passive | Drain of the MOSFET; drain-source voltage VDSS is 500 V maximum and continuous drain current ID25 is 15 A at TC = 25°C. |
| 3 | Source | passive | Source of the MOSFET; source-drain diode continuous current IS is 15 A maximum at VGS = 0 V. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | IXYS |
| Package | TO-247 |
| Category | Triode/MOS Tube/Transistor |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-source breakdown voltage | BVDSS | 500 | V | VGS = 0V, ID = 250μA | 1 | ||
| Gate threshold voltage | VGS(th) | 2.5 | 4.5 | V | VDS = VGS, ID = 250μA | 1 | |
| Gate-source leakage current | IGSS | -100 | 100 | nA | VGS = ±20V, VDS = 0V | 1 | |
| Zero gate voltage drain current | IDSS | 25 | μA | VDS = VDSS, VGS = 0V | 1 | ||
| Zero gate voltage drain current at TJ=125°C | IDSS | 200 | μA | TJ = 125°C | 1 | ||
| Static drain-source on-resistance | RDS(on) | 480 | mΩ | VGS = 10V, ID = 0.5 • ID25, Note 1 | 1 | ||
| Forward transconductance | gfs | 4.5 | 6.3 | 8 | S | VDS = 10V, ID = 0.5 • ID25, Note 1 | 2 |
| Diode forward voltage | VSD | 1.5 | V | IF = 15A, VGS = 0V, Note 1 | 2 | ||
| Reverse recovery time | trr | 570 | ns | IF = 15A, -di/dt = 100A/μs, VR = 100V, VGS = 0V | 2 | ||
| Continuous source current | IS | 15 | A | VGS = 0V | 2 | ||
| Pulsed source current | ISM | 60 | A | Repetitive, pulse width limited by TJM | 2 | ||
| Drain-source voltage | VDSS | 500 | V | TJ = 25°C to 150°C | 1 | ||
| Drain-gate voltage | VDGR | 500 | V | TJ = 25°C to 150°C, RGS = 1MΩ | 1 | ||
| Gate-source voltage continuous | VGSS | -20 | 20 | V | Continuous | 1 | |
| Gate-source voltage transient | VGSM | -30 | 30 | V | Transient | 1 | |
| Continuous drain current | ID25 | 15 | A | TC = 25°C | 1 | ||
| Pulsed drain current | IDM | 35 | A | TC = 25°C, Pulse Width Limited by TJM | 1 | ||
| Avalanche current | IA | 15 | A | TC = 25°C | 1 | ||
| Single pulse avalanche energy | EAS | 750 | mJ | TC = 25°C | 1 | ||
| Total power dissipation | PD | 300 | W | TC = 25°C | 1 | ||
| Operating junction temperature | TJ | -55 | 150 | °C | 1 | ||
| Maximum junction temperature | TJM | 150 | °C | 1 | |||
| Storage temperature | Tstg | -55 | 150 | °C | 1 | ||
| Lead temperature | TL | 300 | °C | 1.6mm (0.062 in.) from Case for 10s | 1 | ||
| Plastic body soldering temperature | TSOLD | 260 | °C | Plastic Body for 10s | 1 | ||
| Safe operating area power | SOA | 150 | W | VDS = 400V, ID = 375mA, TC = 75°C, tp = 2s | 2 | ||
| Thermal resistance case to sink (TO-247) | RthCS | 0.25 | °C/W | TO-247 | 2 | ||
| Thermal resistance junction to case | RthJC | 0.42 | °C/W | 2 | |||
| Input capacitance | Ciss | 4080 | pF | 2 | |||
| Output capacitance | Coss | 265 | pF | VGS = 0V, VDS = 25V, f = 1MHz | 2 | ||
| Reverse transfer capacitance | Crss | 68 | pF | 2 | |||
| Turn-on delay time | td(on) | 38 | ns | Resistive switching: VGS = 10V, 0.5 • VDSS, ID = 0.5 • ID25, RG = 10Ω (External) | 2 | ||
| Rise time | tr | 73 | ns | Resistive switching: VGS = 10V, 0.5 • VDSS, ID = 0.5 • ID25, RG = 10Ω (External) | 2 | ||
| Turn-off delay time | td(off) | 110 | ns | Resistive switching: VGS = 10V, 0.5 • VDSS, ID = 0.5 • ID25, RG = 10Ω (External) | 2 | ||
| Fall time | tf | 65 | ns | Resistive switching: VGS = 10V, 0.5 • VDSS, ID = 0.5 • ID25, RG = 10Ω (External) | 2 | ||
| Total gate charge | Qg(on) | 123 | nC | VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 | 2 | ||
| Gate-source charge | Qgs | 20 | nC | VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 | 2 | ||
| Gate-drain charge | Qgd | 72 | nC | VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 | 2 |
CAD (KiCad official)
- Symbol:
IXTH15N50L2 - Footprint:
Package_TO_SOT_THT:TO-247-3_Vertical - 3D model: TO-247 (KiCad packages3D, STEP)
- 3D model files:
ixth15n50l2-etched.step/ixth15n50l2-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);ixth15n50l2.step/ixth15n50l2.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: IXYS datasheet (6 pp, sha256
d8f5078c29a33b18, retrieved 2026-10-26, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).