component
IXFP5N100P
Public Made by Adomby adom
Littelfuse MOSFETs, TO-220. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownIXFP5N100P
Littelfuse · MOSFETs · TO-220
IXFP5N100P from Littelfuse, in a TO-220. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate of the MOSFET, rated for continuous VGSS of ±30 V (transient VGSM ±40 V). |
| 2 | D | passive | Drain of the MOSFET, rated for VDSS of 1000 V (VDGR 1000 V with RGS = 1 MΩ) and continuous ID25 of 5 A at TC = 25°C. |
| 3 | S | passive | Source of the MOSFET, rated for continuous source current IS of 5 A with VGS = 0 V. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Littelfuse |
| Package | TO-220 |
| Category | Triode/MOS Tube/Transistor |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-source voltage | VDSS | 1000 | V | TJ = 25°C to 150°C | 1 | ||
| Drain-gate voltage | VDGR | 1000 | V | TJ = 25°C to 150°C, RGS = 1MΩ | 1 | ||
| Gate-source voltage, continuous | VGSS | -30 | 30 | V | Continuous | 1 | |
| Gate-source voltage, transient | VGSM | -40 | 40 | V | Transient | 1 | |
| Continuous drain current | ID25 | 5 | A | TC = 25°C | 1 | ||
| Pulsed drain current | IDM | 10 | A | TC = 25°C, pulse width limited by TJM | 1 | ||
| Avalanche current | IA | 5 | A | TC = 25°C | 1 | ||
| Avalanche energy | EAS | 300 | mJ | TC = 25°C | 1 | ||
| Peak diode recovery dV/dt | dV/dt | 10 | V/ns | IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 150°C | 1 | ||
| Total power dissipation | PD | 250 | W | TC = 25°C | 1 | ||
| Operating junction temperature | TJ | -55 | 150 | °C | 1 | ||
| Maximum junction temperature | TJM | 150 | °C | 1 | |||
| Storage temperature | Tstg | -55 | 150 | °C | 1 | ||
| Maximum lead temperature for soldering | TL | 300 | °C | 1.6mm (0.062) from case for 10s | 1 | ||
| Plastic body soldering temperature | TSOLD | 260 | °C | Plastic body for 10s | 1 | ||
| Drain-source breakdown voltage | BVDSS | 1000 | V | VGS = 0V, ID = 250μA | 1 | ||
| Gate threshold voltage | VGS(th) | 3 | 6 | V | VDS = VGS, ID = 250μA | 1 | |
| Gate-source leakage current | IGSS | -100 | 100 | nA | VGS = ±30V, VDS = 0V | 1 | |
| Zero gate voltage drain current | IDSS | 10 | μA | VDS = VDSS | 1 | ||
| Zero gate voltage drain current at high temperature | IDSS | 750 | μA | VGS = 0V, TJ = 125°C | 1 | ||
| Static drain-source on-resistance | RDS(on) | 2.8 | Ω | VGS = 10V, ID = 0.5 • ID25, Note 1 | 1 | ||
| Forward transconductance | gfs | 2.4 | 4 | S | VDS= 20V, ID = 0.5 • ID25, Note 1 | 2 | |
| Diode forward voltage | VSD | 1.3 | V | IF = IS, VGS = 0V, Note 1 | 2 | ||
| Continuous source current (body diode) | IS | 5 | A | VGS = 0V | 2 | ||
| Pulsed source current (body diode) | ISM | 20 | A | Repetitive, pulse width limited by TJM | 2 | ||
| Reverse recovery time | trr | 200 | ns | IF = 5A, VGS = 0V, -di/dt = 100A/μs, VR = 100V | 2 | ||
| Gate input resistance | RGi | 1.6 | Ω | 2 | |||
| Input capacitance | Ciss | 1830 | pF | 2 | |||
| Output capacitance | Coss | 113 | pF | VGS = 0V, VDS = 25V, f = 1MHz | 2 | ||
| Reverse transfer capacitance | Crss | 20 | pF | 2 | |||
| Turn-on delay time | td(on) | 12 | ns | VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25, RG = 5Ω (External) | 2 | ||
| Rise time | tr | 13 | ns | VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25, RG = 5Ω (External) | 2 | ||
| Turn-off delay time | td(off) | 30 | ns | VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25, RG = 5Ω (External) | 2 | ||
| Fall time | tf | 37 | ns | VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25, RG = 5Ω (External) | 2 | ||
| Total gate charge | Qg(on) | 33.4 | nC | 2 | |||
| Gate-source charge | Qgs | 10.6 | nC | VGS= 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 | 2 | ||
| Gate-drain charge | Qgd | 14.4 | nC | 2 | |||
| Diode reverse recovery current | IRM | 7.4 | A | IF = 5A, VGS = 0V, -di/dt = 100A/μs, VR = 100V | 2 | ||
| Diode reverse recovery charge | QRM | 0.43 | μC | IF = 5A, VGS = 0V, -di/dt = 100A/μs, VR = 100V | 2 | ||
| Junction-to-case thermal resistance | RthJC | 0.5 | °C/W | 2 | |||
| Case-to-sink thermal resistance (TO-220) | RthCS | 0.5 | °C/W | 2 |
CAD (KiCad official)
- Symbol:
IXFP5N100P - Footprint:
Package_TO_SOT_THT:TO-220-3_Vertical - 3D model: TO-220 (KiCad packages3D, STEP)
- 3D model files:
ixfp5n100p-etched.step/ixfp5n100p-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);ixfp5n100p.step/ixfp5n100p.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Littelfuse datasheet (5 pp, sha256
62095e5dc26a1b7a, retrieved 2026-10-31, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).