# IXFH44N50P

**Littelfuse IXYS** · MOSFETs · TO-247-3

IXFH44N50P from Littelfuse IXYS, in a TO-247-3. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

## Pinout

| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate terminal; the datasheet gives VGSS = 30 V continuous and VGSM = 40 V transient maximum ratings. |
| 2 | D | passive | Drain terminal; the datasheet gives VDSS = 500 V and ID25 = 44 A at TC = 25°C. |
| 3 | S | passive | Source terminal, the reference for VGS = 0 V in the blocking and body-diode test conditions. |

## Key specifications

| Parameter | Value |
|---|---|
| Manufacturer | Littelfuse IXYS |
| Package | TO-247-3 |
| Category | Transistors/Thyristors |
| Pins | 3 |

## Electrical characteristics

Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).

| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-source breakdown voltage | BVDSS | 500 |  |  | V | VGS = 0V, ID = 250μA | 1 |
| Gate threshold voltage | VGS(th) | 3 |  | 5 | V | VDS = VGS, ID = 4mA | 1 |
| Gate-source leakage current | IGSS |  |  | 100 | nA | VGS = 30V, VDS = 0V | 1 |
| Zero gate voltage drain current (TJ = 25°C) | IDSS |  |  | 25 | μA | VDS = VDSS, VGS = 0V | 1 |
| Zero gate voltage drain current (TJ = 125°C) | IDSS |  |  | 500 | μA | TJ = 125C, VDS = VDSS, VGS = 0V | 1 |
| Static drain-source on-resistance | RDS(on) |  |  | 140 | mΩ | VGS = 10V, ID = 0.5 • ID25, Note 1 | 1 |
| Forward transconductance | gfs | 20 | 32 |  | S | VDS = 20V, ID = 0.5 • ID25, Note 1 | 2 |
| Input capacitance | Ciss |  | 5440 |  | pF |  | 2 |
| Output capacitance | Coss |  | 639 |  | pF | VGS = 0V, VDS = 25V, f = 1MHz | 2 |
| Reverse transfer capacitance | Crss |  | 40 |  | pF |  | 2 |
| Turn-on delay time | td(on) |  | 28 |  | ns | Resistive switching: VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25, RG = 3 (External) | 2 |
| Rise time | tr |  | 29 |  | ns | Resistive switching: VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25, RG = 3 (External) | 2 |
| Turn-off delay time | td(off) |  | 85 |  | ns | Resistive switching: VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25, RG = 3 (External) | 2 |
| Fall time | tf |  | 27 |  | ns | Resistive switching: VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25, RG = 3 (External) | 2 |
| Total gate charge | Qg(on) |  | 98 |  | nC |  | 2 |
| Gate-source charge | Qgs |  | 35 |  | nC | VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 | 2 |
| Gate-drain charge | Qgd |  | 30 |  | nC |  | 2 |
| Junction-to-case thermal resistance | RthJC |  |  | 0.19 | °C/W |  | 2 |
| Case-to-sink thermal resistance, TO-247 | RthCS |  |  | 0.21 | °C/W | TO-247 | 2 |
| Continuous source current | IS |  |  | 44 | A | VGS = 0V | 2 |
| Repetitive pulse source current | ISM |  |  | 110 | A | Repetitive, pulse width limited by TJM | 2 |
| Diode forward voltage | VSD |  |  | 1.5 | V | IF = IS, VGS = 0V, Note 1 | 2 |
| Reverse recovery time | trr |  |  | 200 | ns | IF = 25A, -di/dt = 100A/μs, VR = 100V, VGS = 0V | 2 |
| Peak reverse recovery current | IRM |  |  | 6 | A | IF = 25A, -di/dt = 100A/μs, VR = 100V, VGS = 0V | 2 |
| Reverse recovery charge | QRM |  |  | 0.6 | μC | IF = 25A, -di/dt = 100A/μs, VR = 100V, VGS = 0V | 2 |
| Drain-source voltage | VDSS |  |  | 500 | V | TJ = 25°C to 150°C | 1 |
| Drain-gate voltage | VDGR |  |  | 500 | V | TJ = 25°C to 150°C, RGS = 1MΩ | 1 |
| Gate-source voltage, continuous | VGSS |  |  | 30 | V | Continuous | 1 |
| Gate-source voltage, transient | VGSM |  |  | 40 | V | Transient | 1 |
| Continuous drain current | ID25 |  |  | 44 | A | TC = 25°C | 1 |
| Pulsed drain current | IDM |  |  | 110 | A | TC = 25°C, pulse width limited by TJM | 1 |
| Avalanche current | IA |  |  | 44 | A | TC = 25°C | 1 |
| Single pulse avalanche energy | EAS |  |  | 1.7 | J | TC = 25°C | 1 |
| Peak diode recovery dv/dt | dv/dt |  |  | 10 | V/ns | IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 150°C | 1 |
| Total power dissipation | PD |  |  | 658 | W | TC = 25°C | 1 |
| Operating junction temperature | TJ | -55 |  | 150 | °C |  | 1 |
| Maximum junction temperature | TJM |  |  | 150 | °C |  | 1 |
| Storage temperature | Tstg | -55 |  | 150 | °C |  | 1 |
| Maximum lead temperature for soldering | TL |  |  | 300 | °C |  | 1 |
| Plastic body soldering temperature | TSOLD |  |  | 260 | °C | Plastic body for 10s | 1 |

## CAD (KiCad official)

- Symbol: `IXFH44N50P`
- Footprint: `Package_TO_SOT_THT:TO-247-3_Vertical`
- 3D model: TO-247-3 (KiCad packages3D, STEP)
- 3D model files: `ixfh44n50p-etched.step` / `ixfh44n50p-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `ixfh44n50p.step` / `ixfh44n50p.glb` are the bare package body.

## Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

- **Datasheet:** [Littelfuse IXYS datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8588954830798381056) (6 pp, sha256 `f17a28940e2aa921`, retrieved 2026-10-15, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-haiku-5-5` (text), consensus `claude-sonnet-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).

[Datasheet PDF](docs/ixfh44n50p-datasheet.pdf)