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Ray Publish 0.1.0 4e81c9c 14d ago

IXFH26N50P

Littelfuse/IXYS · MOSFETs · TO-247

IXFH26N50P from Littelfuse/IXYS, in a TO-247. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 Gate input Gate control terminal; VGS is rated ±30 V continuous and ±40 V transient.
2 Drain passive Drain terminal; rated VDSS 500 V with ID25 of 26 A at TC = 25° C.
3 Source passive Source terminal and reference for gate drive; source current IS is 26 A at VGS = 0 V.

Key specifications

Parameter Value
Manufacturer Littelfuse/IXYS
Package TO-247
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-source breakdown voltage BVDSS 500 V VGS = 0 V, ID = 250 µA 1
Gate threshold voltage VGS(th) 3 5.5 V VDS = VGS, ID = 4 mA 1
Gate-source leakage current IGSS -100 100 nA VGS = ±30 VDC, VDS = 0 1
Zero gate voltage drain current IDSS 25 µA VDS = VDSS, VGS = 0 V, TJ = 25° C 1
Zero gate voltage drain current at 125 C IDSS 250 µA VDS = VDSS, VGS = 0 V, TJ = 125° C 1
Static drain-source on resistance RDS(on) 230 mΩ VGS = 10 V, ID = 0.5 ID25; pulse test, t ≤ 300 µs, duty cycle d ≤ 2 % 1
Forward transconductance gfs 16 26 S VDS = 20 V; ID = 0.5 ID25, pulse test 2
Continuous source current IS 26 A VGS = 0 V 2
Repetitive pulsed source current ISM 104 A Repetitive 2
Diode forward voltage VSD 1.5 V IF = IS, VGS = 0 V; pulse test, t ≤ 300 µs, duty cycle d ≤ 2 % 2
Reverse recovery time trr 200 ns IF = 25A, -di/dt = 100 A/µs 2
Drain-source voltage VDSS 500 V TJ = 25° C to 150° C 1
Drain-gate voltage VDGR 500 V TJ = 25° C to 150° C; RGS = 1 MΩ 1
Gate-source voltage continuous VGSS -30 30 V Continuous 1
Gate-source voltage transient VGSM -40 40 V Transient 1
Continuous drain current ID25 26 A TC = 25° C 1
Pulsed drain current IDM 78 A TC = 25° C, pulse width limited by TJM 1
Avalanche current IAR 26 A TC = 25° C 1
Avalanche energy repetitive EAR 40 mJ TC = 25° C 1
Avalanche energy single pulse EAS 1 J TC = 25° C 1
Peak diode recovery dv/dt dv/dt 10 V/ns IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS, TJ ≤ 150° C, RG = 4 Ω 1
Total power dissipation PD 400 W TC = 25° C 1
Operating junction temperature TJ -55 150 °C 1
Maximum junction temperature TJM 150 °C 1
Storage temperature Tstg -55 150 °C 1
Lead temperature for soldering TL 300 °C 1.6 mm (0.062 in.) from case for 10 s 1
Plastic body soldering temperature TSOLD 260 °C Plastic body for 10 s 1
Junction-to-case thermal resistance RthJC 0.31 °C/W 2
Case-to-sink thermal resistance RthCS 0.21 °C/W TO-247, PLUS220 2

CAD (KiCad official)

  • Symbol: IXFH26N50P
  • Footprint: Package_TO_SOT_THT:TO-247-3_Vertical
  • 3D model: TO-247 (KiCad packages3D, STEP)
  • 3D model files: ixfh26n50p-etched.step / ixfh26n50p-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); ixfh26n50p.step / ixfh26n50p.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Littelfuse/IXYS datasheet (6 pp, sha256 ab3a75d9122c8a80, retrieved 2026-10-26, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF