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IXFH26N50P
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Littelfuse/IXYS MOSFETs, TO-247. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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IXFH26N50P
Littelfuse/IXYS · MOSFETs · TO-247
IXFH26N50P from Littelfuse/IXYS, in a TO-247. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | Gate | input | Gate control terminal; VGS is rated ±30 V continuous and ±40 V transient. |
| 2 | Drain | passive | Drain terminal; rated VDSS 500 V with ID25 of 26 A at TC = 25° C. |
| 3 | Source | passive | Source terminal and reference for gate drive; source current IS is 26 A at VGS = 0 V. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Littelfuse/IXYS |
| Package | TO-247 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-source breakdown voltage | BVDSS | 500 | V | VGS = 0 V, ID = 250 µA | 1 | ||
| Gate threshold voltage | VGS(th) | 3 | 5.5 | V | VDS = VGS, ID = 4 mA | 1 | |
| Gate-source leakage current | IGSS | -100 | 100 | nA | VGS = ±30 VDC, VDS = 0 | 1 | |
| Zero gate voltage drain current | IDSS | 25 | µA | VDS = VDSS, VGS = 0 V, TJ = 25° C | 1 | ||
| Zero gate voltage drain current at 125 C | IDSS | 250 | µA | VDS = VDSS, VGS = 0 V, TJ = 125° C | 1 | ||
| Static drain-source on resistance | RDS(on) | 230 | mΩ | VGS = 10 V, ID = 0.5 ID25; pulse test, t ≤ 300 µs, duty cycle d ≤ 2 % | 1 | ||
| Forward transconductance | gfs | 16 | 26 | S | VDS = 20 V; ID = 0.5 ID25, pulse test | 2 | |
| Continuous source current | IS | 26 | A | VGS = 0 V | 2 | ||
| Repetitive pulsed source current | ISM | 104 | A | Repetitive | 2 | ||
| Diode forward voltage | VSD | 1.5 | V | IF = IS, VGS = 0 V; pulse test, t ≤ 300 µs, duty cycle d ≤ 2 % | 2 | ||
| Reverse recovery time | trr | 200 | ns | IF = 25A, -di/dt = 100 A/µs | 2 | ||
| Drain-source voltage | VDSS | 500 | V | TJ = 25° C to 150° C | 1 | ||
| Drain-gate voltage | VDGR | 500 | V | TJ = 25° C to 150° C; RGS = 1 MΩ | 1 | ||
| Gate-source voltage continuous | VGSS | -30 | 30 | V | Continuous | 1 | |
| Gate-source voltage transient | VGSM | -40 | 40 | V | Transient | 1 | |
| Continuous drain current | ID25 | 26 | A | TC = 25° C | 1 | ||
| Pulsed drain current | IDM | 78 | A | TC = 25° C, pulse width limited by TJM | 1 | ||
| Avalanche current | IAR | 26 | A | TC = 25° C | 1 | ||
| Avalanche energy repetitive | EAR | 40 | mJ | TC = 25° C | 1 | ||
| Avalanche energy single pulse | EAS | 1 | J | TC = 25° C | 1 | ||
| Peak diode recovery dv/dt | dv/dt | 10 | V/ns | IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS, TJ ≤ 150° C, RG = 4 Ω | 1 | ||
| Total power dissipation | PD | 400 | W | TC = 25° C | 1 | ||
| Operating junction temperature | TJ | -55 | 150 | °C | 1 | ||
| Maximum junction temperature | TJM | 150 | °C | 1 | |||
| Storage temperature | Tstg | -55 | 150 | °C | 1 | ||
| Lead temperature for soldering | TL | 300 | °C | 1.6 mm (0.062 in.) from case for 10 s | 1 | ||
| Plastic body soldering temperature | TSOLD | 260 | °C | Plastic body for 10 s | 1 | ||
| Junction-to-case thermal resistance | RthJC | 0.31 | °C/W | 2 | |||
| Case-to-sink thermal resistance | RthCS | 0.21 | °C/W | TO-247, PLUS220 | 2 |
CAD (KiCad official)
- Symbol:
IXFH26N50P - Footprint:
Package_TO_SOT_THT:TO-247-3_Vertical - 3D model: TO-247 (KiCad packages3D, STEP)
- 3D model files:
ixfh26n50p-etched.step/ixfh26n50p-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);ixfh26n50p.step/ixfh26n50p.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Littelfuse/IXYS datasheet (6 pp, sha256
ab3a75d9122c8a80, retrieved 2026-10-26, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).
# IXFH26N50P
**Littelfuse/IXYS** · MOSFETs · TO-247
IXFH26N50P from Littelfuse/IXYS, in a TO-247. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
## Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | Gate | input | Gate control terminal; VGS is rated ±30 V continuous and ±40 V transient. |
| 2 | Drain | passive | Drain terminal; rated VDSS 500 V with ID25 of 26 A at TC = 25° C. |
| 3 | Source | passive | Source terminal and reference for gate drive; source current IS is 26 A at VGS = 0 V. |
## Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Littelfuse/IXYS |
| Package | TO-247 |
| Category | Transistors/Thyristors |
| Pins | 3 |
## Electrical characteristics
Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-source breakdown voltage | BVDSS | 500 | | | V | VGS = 0 V, ID = 250 µA | 1 |
| Gate threshold voltage | VGS(th) | 3 | | 5.5 | V | VDS = VGS, ID = 4 mA | 1 |
| Gate-source leakage current | IGSS | -100 | | 100 | nA | VGS = ±30 VDC, VDS = 0 | 1 |
| Zero gate voltage drain current | IDSS | | | 25 | µA | VDS = VDSS, VGS = 0 V, TJ = 25° C | 1 |
| Zero gate voltage drain current at 125 C | IDSS | | | 250 | µA | VDS = VDSS, VGS = 0 V, TJ = 125° C | 1 |
| Static drain-source on resistance | RDS(on) | | | 230 | mΩ | VGS = 10 V, ID = 0.5 ID25; pulse test, t ≤ 300 µs, duty cycle d ≤ 2 % | 1 |
| Forward transconductance | gfs | 16 | 26 | | S | VDS = 20 V; ID = 0.5 ID25, pulse test | 2 |
| Continuous source current | IS | | | 26 | A | VGS = 0 V | 2 |
| Repetitive pulsed source current | ISM | | | 104 | A | Repetitive | 2 |
| Diode forward voltage | VSD | | | 1.5 | V | IF = IS, VGS = 0 V; pulse test, t ≤ 300 µs, duty cycle d ≤ 2 % | 2 |
| Reverse recovery time | trr | | | 200 | ns | IF = 25A, -di/dt = 100 A/µs | 2 |
| Drain-source voltage | VDSS | | | 500 | V | TJ = 25° C to 150° C | 1 |
| Drain-gate voltage | VDGR | | | 500 | V | TJ = 25° C to 150° C; RGS = 1 MΩ | 1 |
| Gate-source voltage continuous | VGSS | -30 | | 30 | V | Continuous | 1 |
| Gate-source voltage transient | VGSM | -40 | | 40 | V | Transient | 1 |
| Continuous drain current | ID25 | | | 26 | A | TC = 25° C | 1 |
| Pulsed drain current | IDM | | | 78 | A | TC = 25° C, pulse width limited by TJM | 1 |
| Avalanche current | IAR | | | 26 | A | TC = 25° C | 1 |
| Avalanche energy repetitive | EAR | | | 40 | mJ | TC = 25° C | 1 |
| Avalanche energy single pulse | EAS | | | 1 | J | TC = 25° C | 1 |
| Peak diode recovery dv/dt | dv/dt | | | 10 | V/ns | IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS, TJ ≤ 150° C, RG = 4 Ω | 1 |
| Total power dissipation | PD | | | 400 | W | TC = 25° C | 1 |
| Operating junction temperature | TJ | -55 | | 150 | °C | | 1 |
| Maximum junction temperature | TJM | | | 150 | °C | | 1 |
| Storage temperature | Tstg | -55 | | 150 | °C | | 1 |
| Lead temperature for soldering | TL | | | 300 | °C | 1.6 mm (0.062 in.) from case for 10 s | 1 |
| Plastic body soldering temperature | TSOLD | | | 260 | °C | Plastic body for 10 s | 1 |
| Junction-to-case thermal resistance | RthJC | | | 0.31 | °C/W | | 2 |
| Case-to-sink thermal resistance | RthCS | | | 0.21 | °C/W | TO-247, PLUS220 | 2 |
## CAD (KiCad official)
- Symbol: `IXFH26N50P`
- Footprint: `Package_TO_SOT_THT:TO-247-3_Vertical`
- 3D model: TO-247 (KiCad packages3D, STEP)
- 3D model files: `ixfh26n50p-etched.step` / `ixfh26n50p-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `ixfh26n50p.step` / `ixfh26n50p.glb` are the bare package body.
## Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- **Datasheet:** [Littelfuse/IXYS datasheet](docs/ixfh26n50p-datasheet.pdf) (6 pp, sha256 `ab3a75d9122c8a80`, retrieved 2026-10-26, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-haiku-5-5` (text), consensus `claude-sonnet-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).
[Datasheet PDF](docs/ixfh26n50p-datasheet.pdf)