# IXFH150N15P

**Littelfuse/IXYS** · MOSFETs · TO-247

IXFH150N15P from Littelfuse/IXYS, in a TO-247. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

## Pinout

| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | Gate | input | Gate terminal of the MOSFET; the datasheet rates VGS continuous at ±20 V and VGSM transient at ±30 V. |
| 2 | Drain | passive | Drain terminal; the datasheet rates VDSS at 150 V and ID25 at 150 A at TC = 25° C. |
| 3 | Source | passive | Source terminal; the datasheet gives a continuous source current IS of 150 A and a repetitive ISM of 340 A. |

## Key specifications

| Parameter | Value |
|---|---|
| Manufacturer | Littelfuse/IXYS |
| Package | TO-247 |
| Category | Transistors/Thyristors |
| Pins | 3 |

## Electrical characteristics

Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).

| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-source voltage | VDSS |  |  | 150 | V | TJ = 25° C to 175° C | 1 |
| Drain-gate voltage | VDGR |  |  | 150 | V | TJ = 25° C to 175° C; RGS = 1 MΩ | 1 |
| Continuous gate-source voltage | VGS | -20 |  | 20 | V | Continuous | 1 |
| Transient gate-source voltage | VGSM | -30 |  | 30 | V | Transient | 1 |
| Continuous drain current | ID25 |  |  | 150 | A | TC = 25° C | 1 |
| RMS drain current, external lead current limit | ID(RMS) |  |  | 75 | A | External lead current limit | 1 |
| Pulsed drain current | IDM |  |  | 340 | A | TC = 25° C, pulse width limited by TJM | 1 |
| Avalanche current | IAR |  |  | 60 | A | TC = 25° C | 1 |
| Avalanche energy, repetitive | EAR |  |  | 80 | mJ | TC = 25° C | 1 |
| Single pulse avalanche energy | EAS |  |  | 2.5 | J | TC = 25° C | 1 |
| Peak diode recovery dv/dt | dv/dt |  |  | 10 | V/ns | IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS, TJ ≤ 175° C, RG = 4 Ω | 1 |
| Total power dissipation | PD |  |  | 714 | W | TC = 25° C | 1 |
| Operating junction temperature | TJ | -55 |  | 175 | °C |  | 1 |
| Maximum junction temperature | TJM |  |  | 175 | °C |  | 1 |
| Storage temperature | Tstg | -55 |  | 175 | °C |  | 1 |
| Lead soldering temperature | TL |  |  | 300 | °C | 1.6 mm (0.062 in.) from case for 10 s | 1 |
| Drain-source breakdown voltage | BVDSS | 150 |  |  | V | VGS = 0 V, ID = 250 µA | 1 |
| Gate threshold voltage | VGS(th) | 3 |  | 5 | V | VDS = VGS, ID = 4 mA | 1 |
| Gate-source leakage current | IGSS | -100 |  | 100 | nA | VGS = ±20 VDC, VDS = 0 | 1 |
| Zero gate voltage drain current at 25° C | IDSS |  |  | 25 | µA | VDS = VDSS, VGS = 0 V | 1 |
| Zero gate voltage drain current at 175° C | IDSS |  |  | 1000 | µA | VDS = VDSS, VGS = 0 V, TJ = 175° C | 1 |
| Static drain-source on-resistance | RDS(on) |  |  | 13 | mΩ | VGS = 10 V, ID = 0.5 ID25; pulse test, t ≤ 300 µs, duty cycle d ≤ 2 % | 1 |
| Forward transconductance | gfs | 55 | 80 |  | S | VDS = 10 V; ID = 0.5 ID25, pulse test | 2 |
| Input capacitance | Ciss |  | 5800 |  | pF | VGS = 0 V, VDS = 25 V, f = 1 MHz | 2 |
| Output capacitance | Coss |  | 1730 |  | pF | VGS = 0 V, VDS = 25 V, f = 1 MHz | 2 |
| Reverse transfer capacitance | Crss |  | 400 |  | pF | VGS = 0 V, VDS = 25 V, f = 1 MHz | 2 |
| Turn-on delay time | td(on) |  | 30 |  | ns |  | 2 |
| Rise time | tr |  | 33 |  | ns | VGS = 10 V, VDS = 0.5 VDSS, ID = ID25 | 2 |
| Turn-off delay time | td(off) |  | 100 |  | ns | RG = 3.3 Ω (External) | 2 |
| Fall time | tf |  | 28 |  | ns |  | 2 |
| Total gate charge | Qg(on) |  | 190 |  | nC |  | 2 |
| Gate-source charge | Qgs |  | 40 |  | nC | VGS = 10 V, VDS = 0.5 VDSS, ID = 0.5 ID25 | 2 |
| Gate-drain charge | Qgd |  | 105 |  | nC | VGS = 10 V, VDS = 0.5 VDSS, ID = 0.5 ID25 | 2 |
| Junction-to-case thermal resistance | RthJC |  | 0.21 |  | ° C/W |  | 2 |
| Case-to-sink thermal resistance, TO-247 | RthCS |  | 0.21 |  | ° C/W | TO-247 | 2 |
| Continuous source current | IS |  |  | 150 | A | VGS = 0 V | 2 |
| Repetitive pulsed source current | ISM |  |  | 340 | A | Repetitive | 2 |
| Diode forward voltage | VSD |  |  | 1.5 | V | IF = IS, VGS = 0 V, pulse test, t ≤ 300 µs, duty cycle d ≤ 2 % | 2 |
| Reverse recovery time | trr |  |  | 200 | ns | IF = 25 A, -di/dt = 100 A/µs | 2 |
| Reverse recovery charge | QRM |  | 0.8 |  | µC | VR = 100 V | 2 |

## CAD (KiCad official)

- Symbol: `IXFH150N15P`
- Footprint: `Package_TO_SOT_THT:TO-247-3_Vertical`
- 3D model: TO-247 (KiCad packages3D, STEP)
- 3D model files: `ixfh150n15p-etched.step` / `ixfh150n15p-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `ixfh150n15p.step` / `ixfh150n15p.glb` are the bare package body.

## Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

- **Datasheet:** [Littelfuse/IXYS datasheet](docs/ixfh150n15p-datasheet.pdf) (6 pp, sha256 `0da1d37f372ad94f`, retrieved 2026-10-26, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-haiku-5-5` (text), consensus `claude-sonnet-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).

[Datasheet PDF](docs/ixfh150n15p-datasheet.pdf)