# IXDF602SITR

**IXYS** · Pre-ordered Chips · SOIC-8-EP

IXDF602SITR from IXYS, in a SOIC-8-EP. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

## Pinout

| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | NC | unconnected | No connect pin; the datasheet gives no function for it. |
| 2 | INA | input | Channel A logic input (non-inverting or inverting per IXDF602 configuration, CMOS compatible), withstands negative swing down to -5.0V and up to VCC+0.3V. |
| 3 | GND | power_in | Ground - common ground reference for the device. |
| 4 | INB | input | Channel B logic input (CMOS compatible), withstands -5.0V to VCC+0.3V. |
| 5 | OUTB | output | Channel B output - sources or sinks current (2A peak, 1A continuous) to turn on or off a discrete MOSFET or IGBT. |
| 6 | VCC | power_in | Supply voltage - provides power to the device, 4.5V to 35V recommended operating range (40V absolute maximum). |
| 7 | OUTA | output | Channel A output - sources or sinks current (2A peak, 1A continuous) to turn on or off a discrete MOSFET or IGBT. |
| 8 | NC | unconnected | No connect pin; the datasheet gives no function for it. |
| 9 | EP | power_in | Exposed metal pad on the back of the package should be connected to GND and is not suitable for carrying current. |

## Key specifications

| Parameter | Value |
|---|---|
| Manufacturer | IXYS |
| Package | SOIC-8-EP |
| Category | Interface ICs |
| Pins | 9 |

## Electrical characteristics

Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).

| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Supply Voltage | VCC | -0.3 |  | 40 | V |  | 3 |
| Input Voltage | VIN | -5 |  |  | V |  | 3 |
| Output Current | IOUT | -2 |  | 2 | A |  | 3 |
| Junction Temperature | TJ | -55 |  | 150 | °C |  | 3 |
| Storage Temperature | TSTG | -65 |  | 150 | °C |  | 3 |
| Supply Voltage | VCC | 4.5 |  | 35 | V |  | 3 |
| Operating Temperature Range | TA | -40 |  | 125 | °C |  | 3 |
| Input Voltage, High | VIH | 3 |  |  | V | TA=25°C; 4.5V < VCC < 18V | 4 |
| Input Voltage, Low | VIL |  |  | 0.8 | V | TA=25°C; 4.5V < VCC < 18V | 4 |
| Input Current | IIN | -10 |  | 10 | µA | TA=25°C; 0V < VIN < VCC | 4 |
| Output Voltage, Low | VOL |  |  | 0.025 | V | TA=25°C | 4 |
| Output Resistance, High State | ROH |  | 2.5 | 4 | Ω | TA=25°C; VCC=18V, IOUT=-10mA | 4 |
| Output Resistance, Low State | ROL |  | 1.5 | 3 | Ω | TA=25°C; VCC=18V, IOUT=10mA | 4 |
| Output Current, Continuous | IDC | -1 |  | 1 | A | TA=25°C; Limited by package power dissipation | 4 |
| Rise Time | tr |  | 7.5 | 15 | ns | TA=25°C; VCC=18V, CLOAD=1000pF | 4 |
| Fall Time | tf |  | 6.5 | 15 | ns | TA=25°C; VCC=18V, CLOAD=1000pF | 4 |
| On-Time Propagation Delay | tondly |  | 35 | 60 | ns | TA=25°C; VCC=18V, CLOAD=1000pF | 4 |
| Off-Time Propagation Delay | toffdly |  | 38 | 60 | ns | TA=25°C; VCC=18V, CLOAD=1000pF | 4 |
| Power Supply Current | ICC |  | 1 | 3 | mA | TA=25°C; VCC=18V, VIN=3.5V | 4 |
| Power Supply Current | ICC |  |  | 10 | µA | TA=25°C; VCC=18V, VIN=0V | 4 |
| Input Voltage, High | VIH | 3.3 |  |  | V | TA=-40°C to +125°C; 4.5V < VCC < 18V | 4 |
| Input Voltage, Low | VIL |  |  | 0.65 | V | TA=-40°C to +125°C; 4.5V < VCC < 18V | 4 |
| Output Resistance, High State | ROH |  |  | 6 | Ω | TA=-40°C to +125°C; VCC=18V, IOUT=-10mA | 4 |
| Output Resistance, Low State | ROL |  |  | 5 | Ω | TA=-40°C to +125°C; VCC=18V, IOUT=10mA | 4 |
| Rise Time | tr |  |  | 18 | ns | TA=-40°C to +125°C; VCC=18V, CLOAD=1000pF | 4 |
| Fall Time | tf |  |  | 18 | ns | TA=-40°C to +125°C; VCC=18V, CLOAD=1000pF | 4 |
| On-Time Propagation Delay | tondly |  |  | 75 | ns | TA=-40°C to +125°C; VCC=18V, CLOAD=1000pF | 4 |
| Off-Time Propagation Delay | toffdly |  |  | 75 | ns | TA=-40°C to +125°C; VCC=18V, CLOAD=1000pF | 4 |
| Power Supply Current | ICC |  |  | 3.5 | mA | TA=-40°C to +125°C; VCC=18V, VIN=3.5V | 4 |
| Power Supply Current | ICC |  |  | 150 | µA | TA=-40°C to +125°C; VCC=18V, VIN=0V | 4 |
| Thermal Resistance, Junction-to-Ambient | JA |  | 85 |  | °C/W | 8-Pin Power SOIC (SI) | 5 |
| Thermal Resistance, Junction-to-Case | JC |  | 10 |  | °C/W | 8-Pin Power SOIC (SI) | 5 |

## Materials and finish

As the datasheet states them (page.json `metadata.appearance`; the 3D model's colours follow it).

| Part | Material | Colour / plating | Datasheet says | Page |
|---|---|---|---|---|
| housing | PC |  | Circuits Division classifies its plastic encapsulated devices for moisture sensitivity according to the latest version of the joint industry standard, IPC/JEDEC J-STD-020, in force at the time of prod | 10 |

## CAD (KiCad official)

- Symbol: `IXDF602SITR`
- Footprint: `Package_SO:SOIC-8-1EP_3.9x4.9mm_P1.27mm_EP2.29x3mm`
- 3D model: SOIC-8-EP (KiCad packages3D, STEP)
- 3D model files: `ixdf602sitr-etched.step` / `ixdf602sitr-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `ixdf602sitr.step` / `ixdf602sitr.glb` are the bare package body.

## Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

- **Datasheet:** [IXYS datasheet](docs/ixdf602sitr-datasheet.pdf) (13 pp, sha256 `9c4eda3c9dd0b7f0`, retrieved 2026-10-31, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-haiku-5-5` (text), consensus `claude-sonnet-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).

[Datasheet PDF](docs/ixdf602sitr-datasheet.pdf)