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ITU02N60A-VB

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VBsemi Elec MOSFETs, TO-251. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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ITU02N60A-VB

VBsemi Elec · MOSFETs · TO-251

ITU02N60A-VB from VBsemi Elec, in a TO-251. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate-source voltage is rated at ±30 V with a gate threshold VGS(th) of 2.0 V to 4.0 V.
2 D passive Drain-source breakdown voltage is 650 V minimum, and the drain connects to the case (RthJC 2.1 °C/W).
3 S passive Source terminal of the N-channel MOSFET, with a continuous source-drain diode current IS of 2 A.

Key specifications

Parameter Value
Manufacturer VBsemi Elec
Package TO-251
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage VDS 650 V 1
Gate-Source Voltage VGS -30 30 V 1
Continuous Drain Current ID 1.28 A TC = 100 °C 1
Pulsed Drain Current IDM 8 A 1
Linear Derating Factor 0.48 W/°C 1
Single Pulse Avalanche Energy EAS 165 mJ 1
Repetitive Avalanche Current IAR 2 A 1
Repetitive Avalanche Energy EAR 6 mJ 1
Maximum Power Dissipation PD 45 W TC = 25 °C 1
Peak Diode Recovery dV/dt dV/dt 2.8 V/ns 1
Operating Junction and Storage Temperature Range TJ, Tstg -55 150 °C 1
Soldering Recommendations (Peak Temperature) 300 °C for 10 s 1
Mounting Torque 10 lbf·in 6-32 or M3 screw 1
Maximum Junction-to-Ambient Thermal Resistance RthJA 65 °C/W 2
Maximum Junction-to-Case (Drain) Thermal Resistance RthJC 2.1 °C/W 2
Drain-Source Breakdown Voltage VDS 650 V VGS = 0 V, ID = 250 µA 2
Gate-Source Threshold Voltage VGS(th) 2 4 V VDS = VGS, ID = 250 µA 2
Gate-Source Leakage IGSS -100 100 nA VGS = ± 30 V 2
Zero Gate Voltage Drain Current IDSS 25 µA VDS = 650 V, VGS = 0 V 2
Zero Gate Voltage Drain Current IDSS 250 µA VDS = 520 V, VGS = 0 V, TJ = 125 °C 2
Drain-Source On-State Resistance RDS(on) 4 Ω VGS = 10 V, ID = 1 A 2
Forward Transconductance gfs 3.9 S VDS = 50 V, ID = 1 A 2
Continuous Source-Drain Diode Current IS 2 A 2
Pulsed Diode Forward Current ISM 8 A 2
Body Diode Voltage VSD 1.5 V TJ = 25 °C, IS = 3.2 A, VGS = 0 V 2
Body Diode Reverse Recovery Time trr 180 230 ns TJ = 25 °C, IF = 3.2 A, dI/dt = 100 A/µs 2
Body Diode Reverse Recovery Charge Qrr 2.1 3.2 µC TJ = 25 °C, IF = 3.2 A, dI/dt = 100 A/µs 2

CAD (KiCad official)

  • Symbol: ITU02N60A-VB
  • Footprint: Package_TO_SOT_THT:TO-251-3_Vertical
  • 3D model: TO-251 (KiCad packages3D, STEP)
  • 3D model files: itu02n60a-vb-etched.step / itu02n60a-vb-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); itu02n60a-vb.step / itu02n60a-vb.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: VBsemi Elec datasheet (9 pp, sha256 9e7372c6dfa04d36, retrieved 2026-10-26, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF