component
ITS4200S-ME-P
Public Made by Adomby adom
Infineon Technologies Power Distribution Switches, SOT-223-4. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
Open in new tab ↗
Loads when you scroll to it. Unloads after 5 minutes in the background.
Symbol & Footprint
Schematic Symbol
Open full view ↗Loads when you scroll to it. Unloads after 5 minutes in the background.
PCB Footprint
Open full view ↗Loads when you scroll to it. Unloads after 5 minutes in the background.
Datasheet
Open in new tab ↗Loads when you scroll to it. Unloads after 5 minutes in the background.
README
markdownITS4200S-ME-P
Infineon Technologies · Power Distribution Switches · SOT-223-4
ITS4200S-ME-P from Infineon Technologies, in a SOT-223-4. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | OUT | power_out | Output to the load; the switched high-side output is clamped at VDSCL 62 V to 68 V during inductive switch-off, and the output current is self-limited with an absolute maximum of -1 A. |
| 2 | GND | power_in | Logic ground; the reverse ground current is rated at 0.5 A absolute maximum, and a typical 150 Ω resistor is used in the GND connection for reverse-battery protection. |
| 3 | IN | input | Controls the power switch, which is ON when high; the continuous input voltage is -3 V to VS, the absolute input voltage range is -10 V to VS, and the input current is limited to ±5 mA. |
| 4 | VS | power_in | Supply voltage with a nominal operating range of 11 V to 45 V and an absolute maximum of 48 V; the wiring must be designed for the maximum short circuit current and for low thermal resistance. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Infineon Technologies |
| Package | SOT-223-4 |
| Category | Power Management (PMIC) |
| Pins | 4 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Supply voltage | VS | 48 | V | 5 | |||
| Reverse Ground Current | IGND | 0.5 | A | 5 | |||
| Output Current (short circuit current see electrical characteristics) | IOUT | -1 | A | Self limited | 5 | ||
| Input voltage | VIN | -10 | V | Max printed as VS (not numeric) | 5 | ||
| Input current | IIN | -5 | 5 | mA | 5 | ||
| Junction Temperature | Tj | -40 | 125 | °C | 5 | ||
| Storage Temperature | Tstg | -55 | 125 | °C | 5 | ||
| Power dissipation | P tot | 1.4 | W | Ta = 25 °C; 50x50x1.5 mm FR4 PCB, 6 cm² copper, vertical, no blown air | 5 | ||
| Inductive load switch-off energy dissipation | EAS | 160 | mJ | Tj = 125 °C; VS=13.5V; IL= 1.0A; single pulse | 5 | ||
| ESD susceptibility (input pin) | VESD | -1 | 1 | kV | HBM | 5 | |
| ESD susceptibility (all other pins) | VESD | -5 | 5 | kV | HBM | 5 | |
| Nominal Operating Voltage | VS | 11 | 45 | V | VS increasing | 6 | |
| Continuous Input Voltage | VIN | -3 | V | Max printed as VS (not numeric) | 6 | ||
| NMOS ON Resistance | RDSON | 150 | 200 | mΩ | IOUT= 0.5A; Tj = 25°C; VIN= 5V | 7 | |
| NMOS ON Resistance | RDSON | 270 | 320 | mΩ | IOUT= 0.5A; Tj = 125°C; VIN= 5V | 7 | |
| Nominal Load Current; device on PCB | ILNOM | 1.4 | A | Tpin5 = 85°C | 7 | ||
| Turn ON Time (to 90% of Vout); L to H transition of VIN | tON | 50 | 100 | µs | VS=15V; RL = 47Ω | 7 | |
| Turn OFF Time (to 10% of Vout); H to L transition of VIN | tOFF | 75 | 150 | µs | VS=15V; RL = 47Ω | 7 | |
| ON-Slew Rate (10 to 30% of Vout); L to H transition of VIN | SRON | 1 | 2 | V/µs | VS=13.5V; RL = 47Ω | 7 | |
| OFF-Slew Rate; dVOUT/dtON (70 to 40% of Vout); H to L transition of VIN | SROFF | 1 | 2 | V/µs | VS=13.5V; RL = 47Ω | 7 | |
| Supply undervoltage; charge pump stop voltage | VSUV | 7 | 10.5 | V | VS decreasing | 7 | |
| Supply startup voltage; charge pump restart voltage | VSSU | 11 | V | VS increasing | 7 | ||
| Operating current | IGND | 1 | 1.6 | mA | VIN= 5V | 7 | |
| Standby current | ISSTB | 10 | 25 | µA | VIN= 0V; VOUT= 0V; -40°C < Tj < 85°C | 7 | |
| Standby current | ISSTB | 50 | µA | VIN= 0V; VOUT= 0V; Tj = 125°C | 7 | ||
| Output leakage current | IOUTLK | 3.5 | 10 | µA | VIN= 0V; VOUT= 0V | 7 | |
| Initial peak short circuit current limit | ILSCP | 4.5 | A | Tj = -40°C; VS = 20V; VIN = 5.0V; tm = 150µs | 7 | ||
| Initial peak short circuit current limit | ILSCP | 3 | A | Tj = 25°C; VS = 20V; VIN = 5.0V; tm = 150µs | 7 | ||
| Initial peak short circuit current limit | ILSCP | 1.4 | A | Tj = 125°C; VS = 20V; VIN = 5.0V; tm = 150µs | 8 | ||
| Repetitive short circuit current limit | ILSCR | 2.2 | A | Tj = TjTrip; see timing diagrams; VIN = 5.0V | 8 | ||
| Output clamp at VOUT = VS - VDS (inductive load switch off) | VDSCL | 62 | 68 | V | IS = 4mA | 8 | |
| Overvoltage protection VOUT = VS - VONCL | VSAZ | 47 | V | IS = 4mA | 8 | ||
| Thermal overload trip temperature | TjTrip | 135 | °C | 8 | |||
| Thermal hysteresis | THYS | 10 | K | 8 | |||
| Continuous reverse battery voltage | VSREV | 45 | V | 8 | |||
| Forward voltage of the drain-source reverse diode | VFDS | 0.6 | 1.2 | V | IFDS = 1A; VIN= 0V; Tj = 125°C | 8 | |
| Input turn-ON threshold voltage | VINON | 3 | V | 8 | |||
| Input turn-OFF threshold voltage | VINOFF | 1.8 | V | 8 | |||
| Input threshold hysteresis | VINHYS | 0.2 | V | 8 | |||
| Off state input current | IINOFF | 20 | µA | VIN < 1.8V | 8 | ||
| On state input current | IINON | 1 | 110 | µA | VIN = VS < 15V | 8 | |
| Input resistance | RIN | 1.5 | 3.5 | 5 | kΩ | 8 | |
| Input Switch ON Delay Time | tdON | 150 | 350 | µs | 8 | ||
| Thermal Resistance - Junction to pin5 | Rthj-pin5 | 41.8 | K/W | 6 | |||
| Thermal Resistance - Junction to Ambient - 1s0p, minimal footprint | RthJA_1s0p | 155.5 | K/W | 1s0p, minimal footprint; JEDEC JESD51-3 natural convection, FR4 | 6 | ||
| Thermal Resistance - Junction to Ambient - 1s0p, 300mm2 | RthJA_1s0p_300mm | 76.1 | K/W | 1s0p, 300 mm² Cu; JEDEC JESD51-3 natural convection | 6 | ||
| Thermal Resistance - Junction to Ambient - 1s0p, 600mm2 | RthJA_1s0p_600mm | 67.1 | K/W | 1s0p, 600 mm² Cu; JEDEC JESD51-3 natural convection | 6 | ||
| Thermal Resistance - Junction to Ambient - 2s2p | RthJA_2s2p | 93.6 | K/W | 2s2p; JEDEC JESD51-2,-5,-7 natural convection | 6 | ||
| Thermal Resistance - Junction to Ambient with thermal vias - 2s2p | RthJA_2s2p | 50 | K/W | 2s2p with two thermal vias; JEDEC JESD51-2,-5,-7 | 6 |
CAD (KiCad official)
- Symbol:
ITS4200S-ME-P - Footprint:
Package_TO_SOT_SMD:SOT-223 - 3D model: SOT-223-4 (KiCad packages3D, STEP)
- 3D model files:
its4200s-me-p-etched.step/its4200s-me-p-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);its4200s-me-p.step/its4200s-me-p.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Infineon Technologies datasheet (20 pp, sha256
dbad31d1fa3ce4a5, retrieved 2026-10-19, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).