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ISS17EP06LMXTSA1

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Infineon Technologies MOSFETs, SOT-23. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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ISS17EP06LMXTSA1

Infineon Technologies · MOSFETs · SOT-23

ISS17EP06LMXTSA1 from Infineon Technologies, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 Gate input Gate terminal of the P-channel MOSFET, with gate-source voltage VGS rated from -20 V to 20 V.
2 Source passive Source terminal of the P-channel MOSFET; the datasheet specifies it as the reference for VGS and the reverse-diode forward current IS of -0.3 A at TA=25°C.
3 Drain passive Drain terminal of the P-channel MOSFET, rated for a drain-source voltage VDS of -60 V and a continuous drain current ID of -0.30 A at TA=25°C (VGS=-10 V).

Key specifications

Parameter Value
Manufacturer Infineon Technologies
Package SOT-23
Category Triode/MOS Tube/Transistor
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Continuous drain current ID -0.3 A VGS=-10V,TA=25°C 3
Continuous drain current ID -0.21 A VGS=-10V,TA=100°C 3
Continuous drain current ID -0.29 A VGS=-4.5V,TA=25°C 3
Continuous drain current ID -0.18 A VGS=-4.5V,TA=100°C 3
Pulsed drain current ID,pulse -1.2 A TA=25°C 3
Avalanche energy, single pulse EAS 25 mJ ID=-0.3A,RGS=25Ω 3
Gate source voltage VGS -20 20 V 3
Power dissipation Ptot 0.36 W TA=25°C,RTHJA=350°C/W 3
Operating and storage temperature Tj,Tstg -55 150 °C IEC climatic category; DIN IEC 68-1: 55/150/56 3
Thermal resistance, junction - soldering point, bottom RthJS 120 °C/W 3
Thermal resistance, junction - ambient, device on PCB, minimum footprint RthJA 350 °C/W Device on PCB, minimum footprint 3
Drain-source breakdown voltage V(BR)DSS -60 V VGS=0V,ID=-250µA 4
Gate threshold voltage VGS(th) -1 -1.5 -2 V VDS=VGS,ID=-34µA 4
Zero gate voltage drain current IDSS -0.1 -1 µA VDS=-60V,VGS=0V,Tj=25°C 4
Zero gate voltage drain current IDSS -10 -100 µA VDS=-60V,VGS=0V,Tj=125°C 4
Gate-source leakage current IGSS -10 -100 nA VGS=-20V,VDS=0V 4
Drain-source on-state resistance RDS(on) 1356 1700 mΩ VGS=-10V,ID=-0.3A 4
Drain-source on-state resistance RDS(on) 1634 2200 mΩ VGS=-4.5V,ID=-0.29A 4
Diode continuous forward current IS -0.3 A TA=25°C 5
Diode pulse current IS,pulse -1.2 A TA=25°C 5
Diode forward voltage VSD -0.8 -1.2 V VGS=0V,IF=-0.3A,Tj=25°C 5

CAD (KiCad official)

  • Symbol: ISS17EP06LMXTSA1
  • Footprint: Package_TO_SOT_SMD:SOT-23
  • 3D model: SOT-23 (KiCad packages3D, STEP)
  • 3D model files: iss17ep06lmxtsa1-etched.step / iss17ep06lmxtsa1-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); iss17ep06lmxtsa1.step / iss17ep06lmxtsa1.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Infineon Technologies datasheet (11 pp, sha256 978d2d82f6ccb09d, retrieved 2026-10-29, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF