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ISP762TFUMA1

Public Made by Adom

by adom

Infineon Technologies Power Distribution Switches, SO-8. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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ISP762TFUMA1

Infineon Technologies · Power Distribution Switches · SO-8

ISP762TFUMA1 from Infineon Technologies, in a SO-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 GND power_in Logic ground; the datasheet requires a 150 Ω resistor in the GND connection for reverse battery protection, and for supply voltages above Vbb(AZ) an external GND current limit such as 150 Ω.
2 IN input Input that activates the power switch on a logic high signal; continuous input voltage is -10 to +16 V and DC input current is limited to ±5 mA.
3 OUT output Output to the load; the N-channel power FET has 100 mΩ maximum on-state resistance at 25 °C and 2 A nominal load current.
4 NC unconnected Not connected.
5 Vbb power_in Positive power supply voltage; operating voltage is 5 to 34 V and maximum supply voltage is 40 V.
6 Vbb power_in Positive power supply voltage; operating voltage is 5 to 34 V and maximum supply voltage is 40 V.
7 Vbb power_in Positive power supply voltage; operating voltage is 5 to 34 V and maximum supply voltage is 40 V.
8 Vbb power_in Positive power supply voltage; operating voltage is 5 to 34 V and maximum supply voltage is 40 V.

Key specifications

Parameter Value
Manufacturer Infineon Technologies
Package SO-8
Category Power Management (PMIC)
Pins 8

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Supply voltage Vbb 40 V 6
Continuous input voltage VIN -10 16 V 6
Current through input pin (DC) IIN -5 5 mA 6
Operating temperature Tj -40 150 °C 6
Storage temperature Tstg -55 150 °C 6
Power dissipation Ptot 1.5 W Note 1: device on 50 mm × 50 mm × 1.5 mm epoxy FR4 PCB with 6 cm2 copper 6
Inductive load switch-off energy dissipation, single pulse EAS 870 mJ Tj = 150°C, Vbb = 13.5 V, IL = 1 A 6
Load dump protection VLoaddump 60 V VLoadDump = VA + VS, RI = 2 Ω, td = 400 ms, VIN = low or high, VA = 13.5 V, RL = 13.5 Ω 6
ESD voltage (HBM) OUT pin VESD -6 6 kV According to ANSI/ESDA/JEDEC JS001 (1.5 kΩ, 100 pF) 6
ESD voltage (HBM) IN pin VESD -1 1 kV According to ANSI/ESDA/JEDEC JS001 (1.5 kΩ, 100 pF) 6
ESD voltage (HBM) all other pins VESD -3 3 kV According to ANSI/ESDA/JEDEC JS001 (1.5 kΩ, 100 pF) 6
Thermal resistance junction-ambient, 6 cm2 cooling area Rth(JA) 70 83 K/W Note 4: device on 50 mm × 50 mm × 1.5 mm FR4 PCB with 6 cm2 copper 7
On-state resistance RON 70 100 mΩ Tj = 25°C, IL = 2 A, Vbb = 9 V to 40 V 10
On-state resistance RON 140 200 mΩ Tj = 150°C 10
Nominal load current IL(nom) 2 2.4 A Device on PCB; TC = 85°C, Tj ≤ 150°C 10
Turn-on time to 90% VOUT ton 90 170 µs RL = 47 Ω 10
Turn-off time to 10% VOUT toff 90 230 µs RL = 47 Ω 10
Slew rate on 10% to 30% VOUT dV/dton 0.8 1.7 V/µs RL = 47 Ω 10
Slew rate off 70% to 40% VOUT -dV/dtoff 0.8 1.7 V/µs RL = 47 Ω 10
Operating voltage Vbb(on) 5 34 V 10
Undervoltage shutoff charge pump Vbb(under) 4 V Tj = -40°C to +85 °C 10
Undervoltage shutoff charge pump Vbb(under) 5.5 V Tj = 150°C 10
Undervoltage restart of charge pump Vbb(u cp) 4 5.5 V 10
Standby current Ibb(off) 10 µA Tj = -40°C to +85°C, VIN = 0 V 10
Standby current Ibb(off) 15 µA Tj = 150°C, VIN = 0 V (higher current due to temperature sensor) 10
Leakage output current IL(off) 5 µA VIN = 0 V; included in Ibb(off) 10
Initial peak short circuit current limit (pin 5 to 3) IL(SCp) 18 A Tj = -40°C, Vbb = 20 V, tm = 150 µs 10
Initial peak short circuit current limit (pin 5 to 3) IL(SCp) 4 A Tj = 150°C 10
Output clamp (inductive load switch off) VON(CL) 41 47 V VOUT = Vbb - VON(CL), Ibb = 4 mA 11
Overvoltage protection Vbb(AZ) 41 V Ibb = 4 mA 11
Thermal overload trip temperature Tjt 150 °C 11
Reverse battery -Vbb 32 V Requires a 150 Ω resistor in GND connection (note 9) 11
Input turn-on threshold voltage VIN(T+) 2.2 V 11
Input turn-off threshold voltage VIN(T-) 0.8 V 11
Off state input current IIN(off) 1 25 µA VIN = 0.7 V 11
On state input current IIN(on) 3 25 µA VIN = 5 V 11
Input resistance RI 1.5 3.5 5 kΩ 11
Thermal resistance junction-ambient, minimum footprint Rth(JA) 95 K/W Minimum footprint 7
Operating current IGND 0.5 1.3 mA VIN = 5 V 10
Repetitive short circuit current limit IL(SCr) 7 A Tj = Tjt (see Timing diagrams) 11
Initial peak short circuit current limit (pin 5 to 3) IL(SCp) 10 A Tj = 25°C 10
Thermal hysteresis ΔTjt 10 K 11
Drain-source diode voltage -VON 600 mV VOUT > Vbb, Tj = 150°C 11
Input threshold hysteresis ΔVIN(T) 0.3 V 11

CAD (KiCad official)

  • Symbol: ISP762TFUMA1
  • Footprint: Package_SO:SOIC-8_3.9x4.9mm_P1.27mm
  • 3D model: SO-8 (KiCad packages3D, STEP)
  • 3D model files: isp762tfuma1-etched.step / isp762tfuma1-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); isp762tfuma1.step / isp762tfuma1.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Infineon Technologies datasheet (20 pp, sha256 a3b906f64e962abc, retrieved 2026-10-18, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF