# ISP26DP06NMS

**Infineon Technologies** · MOSFETs · SOT-223

ISP26DP06NMS from Infineon Technologies, in a SOT-223. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

## Pinout

| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | Gate | input | Gate of the P-channel enhancement-mode MOSFET; the datasheet rates VGS at -20 V to 20 V, with gate threshold VGS(th) of -2.1 V to -4 V. |
| 2 | Drain | passive | Drain of the MOSFET, rated at VDS = -60 V and continuous drain current ID = -1.9 A at TA = 25 °C (RthJA = 70 °C/W on 6 cm² of drain copper area). |
| 3 | Source | passive | Source of the MOSFET and the reference terminal for VGS; the internal reverse diode is rated at continuous forward current IS = -1.5 A at TA = 25 °C. |

## Key specifications

| Parameter | Value |
|---|---|
| Manufacturer | Infineon Technologies |
| Package | SOT-223 |
| Category | Transistors/Thyristors |
| Pins | 3 |

## Electrical characteristics

Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).

| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Continuous drain current | ID |  |  | -1.9 | A | VGS=-10V,TA=25°C,RTHJA=70°C/W | 3 |
| Continuous drain current | ID |  |  | -1.2 | A | VGS=-10V,TA=100°C,RTHJA=70°C/W | 3 |
| Pulsed drain current | ID,pulse |  |  | -7.6 | A | TA=25°C | 3 |
| Avalanche energy, single pulse | EAS |  |  | 257 | mJ | ID=-1.9A,RGS=25Ω | 3 |
| Gate source voltage | VGS | -20 |  | 20 | V |  | 3 |
| Power dissipation | Ptot |  |  | 5 | W | TS=25°C | 3 |
| Power dissipation | Ptot |  |  | 1.8 | W | TA=25°C,RTHJA=70°C/W | 3 |
| Operating and storage temperature | Tj,Tstg | -55 |  | 150 | °C | IEC climatic category; DIN IEC 68-1: 55/150/56 | 3 |
| Thermal resistance, junction - soldering point | RthJS |  |  | 25 | °C/W |  | 3 |
| Thermal resistance, junction - ambient | RthJA |  |  | 70 | °C/W | Device on PCB, 6 cm² cooling area | 3 |
| Drain-source breakdown voltage | V(BR)DSS | -60 |  |  | V | VGS=0V,ID=-250µA | 4 |
| Gate threshold voltage | VGS(th) | -2.1 | -3 | -4 | V | VDS=VGS,ID=-270µA | 4 |
| Zero gate voltage drain current (Tj=25°C) | IDSS |  | -0.1 | -1 | µA | VDS=-60V,VGS=0V,Tj=25°C | 4 |
| Zero gate voltage drain current (Tj=125°C) | IDSS |  | -10 | -100 | µA | VDS=-60V,VGS=0V,Tj=125°C | 4 |
| Gate-source leakage current | IGSS |  | -10 | -100 | nA | VGS=-20V,VDS=0V | 4 |
| Drain-source on-state resistance | RDS(on) |  | 189 | 260 | mΩ | VGS=-10V,ID=-1.9A | 4 |
| Diode continuous forward current | IS |  |  | -1.5 | A | TA=25°C | 5 |
| Diode pulse current | IS,pulse |  |  | -6 | A | TA=25°C | 5 |
| Diode forward voltage | VSD |  | -0.81 | -1.2 | V | VGS=0V,IF=-1.5A,Tj=25°C | 5 |

## CAD (KiCad official)

- Symbol: `ISP26DP06NMS`
- Footprint: `Package_TO_SOT_SMD:SOT-223-3_TabPin2`
- 3D model: SOT-223 (KiCad packages3D, STEP)
- 3D model files: `isp26dp06nms-etched.step` / `isp26dp06nms-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `isp26dp06nms.step` / `isp26dp06nms.glb` are the bare package body.

## Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

- **Datasheet:** [Infineon Technologies datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8588885339829755904) (11 pp, sha256 `b1bfb4098cd3e03e`, retrieved 2026-10-18, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-haiku-5-5` (text), consensus `claude-sonnet-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).

[Datasheet PDF](docs/isp26dp06nms-datasheet.pdf)